ES2486261T3 - Célula solar unilateralmente contactada con transcontactados y procedimiento de fabricación - Google Patents
Célula solar unilateralmente contactada con transcontactados y procedimiento de fabricación Download PDFInfo
- Publication number
- ES2486261T3 ES2486261T3 ES07722516.7T ES07722516T ES2486261T3 ES 2486261 T3 ES2486261 T3 ES 2486261T3 ES 07722516 T ES07722516 T ES 07722516T ES 2486261 T3 ES2486261 T3 ES 2486261T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- contact
- absorber
- grid
- fsf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000006096 absorbing agent Substances 0.000 claims abstract description 174
- 238000002161 passivation Methods 0.000 claims abstract description 111
- 230000002745 absorbent Effects 0.000 claims abstract description 53
- 239000002250 absorbent Substances 0.000 claims abstract description 53
- 239000000969 carrier Substances 0.000 claims abstract description 42
- 238000009413 insulation Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000007704 transition Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 678
- 239000000758 substrate Substances 0.000 claims description 63
- 239000002346 layers by function Substances 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 8
- 238000010292 electrical insulation Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000010348 incorporation Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 2
- 238000005520 cutting process Methods 0.000 claims 1
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 238000013532 laser treatment Methods 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 238000011282 treatment Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 69
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000009331 sowing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
- H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006027737 | 2006-06-10 | ||
| DE102006027737A DE102006027737A1 (de) | 2006-06-10 | 2006-06-10 | Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung |
| PCT/DE2007/001007 WO2007140763A2 (de) | 2006-06-10 | 2007-06-02 | Einseitig kontaktierte solarzelle mit durchkontaktierungen und verfahren zur herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2486261T3 true ES2486261T3 (es) | 2014-08-18 |
Family
ID=38690250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES07722516.7T Active ES2486261T3 (es) | 2006-06-10 | 2007-06-02 | Célula solar unilateralmente contactada con transcontactados y procedimiento de fabricación |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8101852B2 (ja) |
| EP (1) | EP2033228B1 (ja) |
| JP (1) | JP5268893B2 (ja) |
| DE (1) | DE102006027737A1 (ja) |
| ES (1) | ES2486261T3 (ja) |
| WO (1) | WO2007140763A2 (ja) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1993142A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung |
| WO2009003150A2 (en) * | 2007-06-26 | 2008-12-31 | Solarity, Inc. | Lateral collection photovoltaics |
| ES2402779T3 (es) * | 2007-12-14 | 2013-05-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Célula solar de película delgada y procedimiento para su fabricación |
| DE102008030693A1 (de) * | 2008-07-01 | 2010-01-14 | Institut Für Solarenergieforschung Gmbh | Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil |
| DE102008060404A1 (de) * | 2008-07-30 | 2010-02-11 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht |
| DE102008051521A1 (de) * | 2008-10-13 | 2010-04-22 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung einer waferbasierten, rückseitenkontaktierten Hetero-Solarzelle und mit dem Verfahren hergestellte Hetero-Solarzelle |
| DE102008055028A1 (de) * | 2008-12-19 | 2010-07-01 | Q-Cells Se | Solarzelle |
| DE102009000279A1 (de) * | 2009-01-16 | 2010-12-09 | Q-Cells Se | Solarzelle und Verfahren zur Herstellung einer Solarzelle |
| KR101153376B1 (ko) | 2009-07-27 | 2012-06-07 | 주식회사 효성 | 후면전극 태양전지 및 그 제조방법 |
| CN102044579B (zh) | 2009-09-07 | 2013-12-18 | Lg电子株式会社 | 太阳能电池 |
| US9064999B2 (en) * | 2009-09-07 | 2015-06-23 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| TWI415277B (zh) * | 2009-11-20 | 2013-11-11 | Ind Tech Res Inst | 太陽能電池結構 |
| DE102009057984A1 (de) * | 2009-12-11 | 2011-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Epitaktische Wrap-Through-Solarzellen mit länglich ausgeprägten Lochformen sowie Verfahren zu deren Herstellung |
| JP2011210802A (ja) * | 2010-03-29 | 2011-10-20 | Napura:Kk | 太陽電池 |
| US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
| JP5485062B2 (ja) * | 2010-07-30 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
| US9227259B2 (en) | 2012-08-22 | 2016-01-05 | International Business Machines Corporation | Increasing the efficiency of solar cells by transfer of solder |
| CN105514185B (zh) * | 2015-12-18 | 2017-09-22 | 四川钟顺太阳能开发有限公司 | 一种中低倍聚光太阳电池 |
| DE102018001057B4 (de) * | 2018-02-07 | 2025-12-04 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle |
| US11145774B2 (en) * | 2018-05-30 | 2021-10-12 | Solar Inventions Llc | Configurable solar cells |
| DE102020002335B4 (de) * | 2020-04-17 | 2022-02-24 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle |
| DE102020131742A1 (de) | 2020-11-30 | 2022-06-02 | Heliatek Gmbh | Feldbreitenanpassung von Zellen in einem photovoltaischen Element |
| CN113421977B (zh) * | 2021-05-26 | 2022-10-04 | 华为技术有限公司 | 太阳能电池及其制备方法、智能眼镜及电子设备 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3903427A (en) * | 1973-12-28 | 1975-09-02 | Hughes Aircraft Co | Solar cell connections |
| JPH0251282A (ja) * | 1988-08-12 | 1990-02-21 | Sharp Corp | 光電変換装置 |
| JP2997363B2 (ja) * | 1992-04-24 | 2000-01-11 | 京セラ株式会社 | 太陽電池素子 |
| US5468652A (en) * | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
| US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
| JPH11177109A (ja) * | 1997-12-10 | 1999-07-02 | Sharp Corp | 太陽電池 |
| DE19854269B4 (de) * | 1998-11-25 | 2004-07-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnschichtsolarzellenanordnung sowie Verfahren zur Herstellung derselben |
| US6664169B1 (en) * | 1999-06-08 | 2003-12-16 | Canon Kabushiki Kaisha | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
| AUPR719701A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Chain link metal interconnect structure |
| JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| DE102005025125B4 (de) * | 2005-05-29 | 2008-05-08 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle |
-
2006
- 2006-06-10 DE DE102006027737A patent/DE102006027737A1/de not_active Withdrawn
-
2007
- 2007-06-02 JP JP2009514630A patent/JP5268893B2/ja not_active Expired - Fee Related
- 2007-06-02 EP EP07722516.7A patent/EP2033228B1/de not_active Not-in-force
- 2007-06-02 WO PCT/DE2007/001007 patent/WO2007140763A2/de not_active Ceased
- 2007-06-02 ES ES07722516.7T patent/ES2486261T3/es active Active
- 2007-06-02 US US12/304,219 patent/US8101852B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009540584A (ja) | 2009-11-19 |
| JP5268893B2 (ja) | 2013-08-21 |
| EP2033228A2 (de) | 2009-03-11 |
| EP2033228B1 (de) | 2014-05-21 |
| DE102006027737A1 (de) | 2007-12-20 |
| WO2007140763A3 (de) | 2008-03-27 |
| US8101852B2 (en) | 2012-01-24 |
| US20090266401A1 (en) | 2009-10-29 |
| WO2007140763A2 (de) | 2007-12-13 |
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