ES2530720T3 - Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica - Google Patents

Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica Download PDF

Info

Publication number
ES2530720T3
ES2530720T3 ES08733596T ES08733596T ES2530720T3 ES 2530720 T3 ES2530720 T3 ES 2530720T3 ES 08733596 T ES08733596 T ES 08733596T ES 08733596 T ES08733596 T ES 08733596T ES 2530720 T3 ES2530720 T3 ES 2530720T3
Authority
ES
Spain
Prior art keywords
silicon
high purity
melt
polycrystalline silicon
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES08733596T
Other languages
English (en)
Inventor
Dominic Leblanc
René Boisvert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferroglobe Innovation SL
Original Assignee
Silicio Ferrosolar SL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicio Ferrosolar SL filed Critical Silicio Ferrosolar SL
Application granted granted Critical
Publication of ES2530720T3 publication Critical patent/ES2530720T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Un proceso para purificar silicio de calidad metalúrgica de baja pureza, que contiene al menos uno de los siguientes contaminantes Al, As, Ba, Bi, Ca, Cd, Fe, Co, Cr, Cu, Fe, La, Mg, Mn, Mo, Na, Ni, P, Pb, Sb, Sc, Sn, Sr, Ti, V, Zn, Zr y B, y obtener un silicio policristalino sólido de alta pureza, comprendiendo dicho proceso las etapas de: (a) introducir una masa fundida de silicio de calidad metalúrgica de baja pureza en un molde, presentando dicho molde una pared inferior aislada, paredes laterales aisladas y una parte superior abierta; (b) solidificar la masa fundida por medio de solidificación unidireccional a partir de la parte superior abierta hacia dicha pared inferior aislada de dicho molde, mientras se agita la masa fundida de forma electromagnética; (c) controlar la velocidad de dicha solidificación unidireccional; (d) detener dicha solidificación unidireccional cuando se haya solidificado parcialmente la masa fundida para producir un lingote que tiene una cubierta exterior que comprende silicio policristalino sólido de alta pureza y un centro que comprende un silicio líquido enriquecido con impurezas; y (e) crear una abertura en dicha cubierta exterior del lingote para descargar dicho silicio líquido enriquecido en impurezas y dejar la cubierta exterior que comprende dicho silicio policristalino sólido de alta pureza, obteniéndose de este modo dicho silicio policristalino sólido de alta pureza.
ES08733596T 2007-09-13 2008-03-13 Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica Active ES2530720T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96006107P 2007-09-13 2007-09-13
PCT/CA2008/000492 WO2009033255A1 (en) 2007-09-13 2008-03-13 Process for the production of medium and high purity silicon from metallurgical grade silicon

Publications (1)

Publication Number Publication Date
ES2530720T3 true ES2530720T3 (es) 2015-03-04

Family

ID=40451503

Family Applications (1)

Application Number Title Priority Date Filing Date
ES08733596T Active ES2530720T3 (es) 2007-09-13 2008-03-13 Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica

Country Status (16)

Country Link
US (1) US7727502B2 (es)
EP (1) EP2212249B1 (es)
JP (1) JP2010538952A (es)
KR (1) KR20100061510A (es)
CN (1) CN101868422B (es)
AU (1) AU2008299523A1 (es)
BR (1) BRPI0816972A2 (es)
CA (1) CA2695393C (es)
EA (1) EA017480B1 (es)
ES (1) ES2530720T3 (es)
MX (1) MX2010002728A (es)
MY (1) MY143807A (es)
NO (1) NO20100512L (es)
UA (1) UA97691C2 (es)
WO (1) WO2009033255A1 (es)
ZA (1) ZA201000882B (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101778795A (zh) * 2007-06-08 2010-07-14 信越化学工业株式会社 金属硅的凝固方法
JP4748187B2 (ja) * 2007-12-27 2011-08-17 国立大学法人東北大学 Ｓｉ結晶インゴットの製造方法
EP2572010A2 (en) 2010-05-20 2013-03-27 Dow Corning Corporation Method and system for producing an aluminum-silicon alloy
JP2012106886A (ja) * 2010-11-17 2012-06-07 Nippon Steel Materials Co Ltd 金属シリコンの凝固精製方法及び装置
CN102275931B (zh) * 2011-07-05 2013-05-29 兰州大学 氢氧焰等离子体提纯冶金级多晶硅粉体的方法
WO2013010575A1 (en) * 2011-07-18 2013-01-24 Abb Research Ltd A method and a control system for controlling a melting process
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
CN103266350B (zh) * 2013-05-31 2015-08-12 大连理工大学 多晶硅铸锭硅真空固液分离方法及分离设备
JP6401051B2 (ja) * 2014-12-26 2018-10-03 京セラ株式会社 多結晶シリコンインゴットの製造方法
RU2632827C2 (ru) * 2015-12-08 2017-10-10 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Устройство для рафинирования кремния
CN107255572B (zh) * 2017-05-12 2020-04-21 宜昌南玻硅材料有限公司 半熔铸锭工艺中硅锭的少子寿命抽样方法
JP6919633B2 (ja) 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
WO2020221439A1 (de) * 2019-04-30 2020-11-05 Wacker Chemie Ag Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
EP4082966A1 (en) * 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
US3752221A (en) * 1969-10-30 1973-08-14 United Aircraft Corp Mold apparatus for casting with downward unidirectional solidification
US4094731A (en) * 1976-06-21 1978-06-13 Interlake, Inc. Method of purifying silicon
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
SE448164B (sv) * 1979-05-24 1987-01-26 Aluminum Co Of America Forfarande for att tillhandahalla en bedd av renade kiselkristaller
US4304703A (en) * 1980-06-23 1981-12-08 Ppg Industries, Inc. Cationic polymer dispersions and their method of preparation
DE3150539A1 (de) 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
FR2524489A1 (fr) * 1982-03-30 1983-10-07 Pechiney Aluminium Procede de purification de metaux par segregation
DE3220285A1 (de) 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
DE3323896A1 (de) 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
JPH0696444B2 (ja) 1987-08-27 1994-11-30 川崎製鉄株式会社 高純度シリコンの製造方法
DE3802531A1 (de) 1988-01-28 1989-08-17 Siemens Ag Verfahren zum abtrennen von festen partikeln aus siliziumschmelzen
DE3804248A1 (de) 1988-02-11 1989-08-24 Siemens Ag Verfahren zum abtrennen von verunreinigungen aus einer siliziumschmelze durch gerichtete erstarrung
DE3929635A1 (de) 1989-09-06 1991-03-07 Siemens Ag Verfahren zum abtrennen fester partikel aus siliziumschmelzen
JPH05124809A (ja) 1991-10-30 1993-05-21 Nippon Sheet Glass Co Ltd シリコンの凝固精製法
JP3263104B2 (ja) 1991-11-27 2002-03-04 川崎製鉄株式会社 金属シリコンの精製方法
JPH05254817A (ja) 1992-03-12 1993-10-05 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
WO1997003922A1 (en) 1994-01-10 1997-02-06 Showa Aluminum Corporation Process for producing high-purity silicon
JP3140300B2 (ja) 1994-03-29 2001-03-05 川崎製鉄株式会社 シリコンの精製方法および精製装置
NO180532C (no) * 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
JPH0873297A (ja) 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
JPH08217436A (ja) 1995-02-17 1996-08-27 Kawasaki Steel Corp 金属シリコンの凝固精製方法、その装置及びその装置に用いる鋳型
EP0757013B1 (en) * 1995-08-04 2001-11-07 Sharp Kabushiki Kaisha Apparatus for purifying metal
DE69621348T2 (de) * 1996-10-14 2002-09-05 Kawasaki Steel Corp., Kobe Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle
JPH10139415A (ja) 1996-10-30 1998-05-26 Kawasaki Steel Corp 溶融シリコンの凝固精製方法
JPH10182135A (ja) 1996-12-20 1998-07-07 Kawasaki Steel Corp シリコンの凝固精製方法
JPH10182129A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 金属シリコンの精製方法
JPH10182137A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
JPH10182286A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp シリコンの連続鋳造方法
JP3852147B2 (ja) 1996-12-27 2006-11-29 Ｊｆｅスチール株式会社 太陽電池用多結晶シリコン・インゴットの製造方法
JPH10251009A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法
JPH10251008A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 金属シリコンの凝固精製方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JPH10273311A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 太陽電池用シリコンの精製方法及び装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
JP4003271B2 (ja) 1998-01-12 2007-11-07 Ｊｆｅスチール株式会社 シリコンの一方向凝固装置
JPH11310496A (ja) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JP4365480B2 (ja) 1999-06-07 2009-11-18 昭和電工株式会社 高純度シリコンの製造方法
JP2001278613A (ja) 2000-03-29 2001-10-10 Kawasaki Steel Corp シリコンの一方向凝固装置
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
JP2003238137A (ja) 2002-02-21 2003-08-27 Kawatetsu Techno Res Corp 太陽電池用多結晶シリコンの製造方法
NO318092B1 (no) 2002-05-22 2005-01-31 Elkem Materials Kalsium-silikatbasert slagg, fremgangsmate for fremstilling av kalsium-silikatbasert slagg, og anvendelse for slaggbehandling av smeltet silium
AU2003277041A1 (en) * 2002-09-27 2004-04-19 Astropower, Inc. Methods and systems for purifying elements
CN1221470C (zh) 2002-11-26 2005-10-05 郑智雄 高纯度硅的生产方法
CN1299983C (zh) 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
JP2007513048A (ja) 2003-12-04 2007-05-24 ダウ・コーニング・コーポレイション 太陽電池グレードのケイ素を生産するための、冶金グレードのケイ素から不純物を除去する方法
NO333319B1 (no) 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP4115432B2 (ja) 2004-07-14 2008-07-09 シャープ株式会社 金属の精製方法
ZA200900898B (en) * 2006-09-14 2010-06-30 Silicium Becancour Inc Process and apparatus for purifying low-grade silicon material

Also Published As

Publication number Publication date
MY143807A (en) 2011-07-15
EA201070358A1 (ru) 2010-08-30
WO2009033255A1 (en) 2009-03-19
EP2212249A1 (en) 2010-08-04
ZA201000882B (en) 2011-04-28
EP2212249A4 (en) 2012-08-15
AU2008299523A1 (en) 2009-03-19
EA017480B1 (ru) 2012-12-28
KR20100061510A (ko) 2010-06-07
NO20100512L (no) 2010-04-08
UA97691C2 (ru) 2012-03-12
JP2010538952A (ja) 2010-12-16
US20090074648A1 (en) 2009-03-19
MX2010002728A (es) 2010-08-02
US7727502B2 (en) 2010-06-01
EP2212249B1 (en) 2015-01-14
CA2695393C (en) 2012-01-03
CN101868422A (zh) 2010-10-20
CN101868422B (zh) 2013-10-09
BRPI0816972A2 (pt) 2015-03-24
CA2695393A1 (en) 2009-03-19

Similar Documents

Publication Publication Date Title
ES2530720T3 (es) Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica
JP2010538952A5 (es)
CN104043792B (zh) 轻合金或轻金属半固态浆料的制备装置及制备方法
CN101758204B (zh) 一种铝合金车轮毂的熔炼与重力铸造工艺
CN103506586A (zh) 一种改善高碳钢小方坯中心缩孔的连铸方法
CN108728662A (zh) 一种n06625镍基合金电渣重熔方法以及使用的渣系
CN102912156B (zh) 一种镁及镁合金废料的回收系统以及方法
CN107537985A (zh) 铜合金材的制造装置及制造方法
CN201760583U (zh) 真空熔炼铝铸造炉
CN101791681B (zh) 中厚板用板坯的水冷模铸生产工艺
CN102211154B (zh) 提高连铸坯内部质量的方法及实施该方法的浸入式水口
CN102832006B (zh) 一种高有效磁导率钴镍基微晶磁性材料及制备方法
WO2017209034A1 (ja) 物質精製方法及び装置、溶湯加熱保持装置並びに高純度物質の連続精製システム
WO2008096411A1 (ja) 鉄系合金の半凝固スラリーの製造方法及び製造装置
CN102418010B (zh) 去除针孔的铸铝合金及其熔炼方法
CN201900233U (zh) 用于锂锭浇铸的速冷铸锭模具
CN103331432B (zh) 一种稀土镁合金的真空压铸方法
CN101665893B (zh) 块状非晶基复合材料铸态韧性相晶体球状化的方法及其专用装置
JP4263463B2 (ja) マグネシウム合金鋳塊とその製造方法
CN205309251U (zh) 半固态镁合金制浆装置
CN207372250U (zh) 一种连铸机用结晶设备
CN202070754U (zh) 结晶器
CN104308080A (zh) 一种大型铸铝齿轮箱箱体铸造工艺方法
CN202106028U (zh) 喂料式浸入式水口
RU2006100567A (ru) Способ изменения крупности зерна отливок из технических расплавов