ES2530809T3 - Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino - Google Patents

Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino Download PDF

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Publication number
ES2530809T3
ES2530809T3 ES13154909T ES13154909T ES2530809T3 ES 2530809 T3 ES2530809 T3 ES 2530809T3 ES 13154909 T ES13154909 T ES 13154909T ES 13154909 T ES13154909 T ES 13154909T ES 2530809 T3 ES2530809 T3 ES 2530809T3
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polycrystalline silicon
procedure
fragment
cleaning
fragments
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Gerhard Traunspurger
Laszlo Fabry
Reiner Pech
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Wacker Chemie AG
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Wacker Chemie AG
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/90—Other crystal-structural characteristics not specified above
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Fragmento de silicio policristalino con una concentración de carbono en la superficie de 0,5-35 ppbw.
ES13154909T 2012-02-21 2013-02-12 Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino Active ES2530809T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012202640A DE102012202640A1 (de) 2012-02-21 2012-02-21 Polykristallines Siliciumbruchstück und Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken

Publications (1)

Publication Number Publication Date
ES2530809T3 true ES2530809T3 (es) 2015-03-06

Family

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Family Applications (1)

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ES13154909T Active ES2530809T3 (es) 2012-02-21 2013-02-12 Fragmento de silicio policristalino y procedimiento para la limpieza de fragmentos de silicio policristalino

Country Status (8)

Country Link
US (2) US9209009B2 (es)
EP (1) EP2631215B1 (es)
JP (1) JP5615946B2 (es)
KR (1) KR101549734B1 (es)
CN (1) CN103253674B (es)
CA (1) CA2803383C (es)
DE (1) DE102012202640A1 (es)
ES (1) ES2530809T3 (es)

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* Cited by examiner, † Cited by third party
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DE102012213869A1 (de) * 2012-08-06 2014-02-06 Wacker Chemie Ag Polykristalline Siliciumbruchstücke und Verfahren zu deren Herstellung
DE102013218003A1 (de) 2013-09-09 2015-03-12 Wacker Chemie Ag Klassieren von Polysilicium
DE102013221826A1 (de) * 2013-10-28 2015-04-30 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
JP2016056066A (ja) * 2014-09-10 2016-04-21 信越化学工業株式会社 多結晶シリコンの表面清浄化方法
DE102015206849A1 (de) 2015-04-16 2016-10-20 Wacker Chemie Ag Vorrichtung und Verfahren zur Klassierung und Entstaubung von Polysiliciumgranulat
JP6292164B2 (ja) * 2015-04-30 2018-03-14 信越半導体株式会社 シリコン単結晶の製造方法
DE102015209629A1 (de) * 2015-05-26 2016-12-01 Wacker Chemie Ag Verpackung von Polysilicium
JP2016222470A (ja) * 2015-05-27 2016-12-28 信越化学工業株式会社 多結晶シリコン片
JP6343592B2 (ja) 2015-07-28 2018-06-13 信越化学工業株式会社 多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法
DE102016204651A1 (de) 2016-03-21 2017-09-21 Wacker Chemie Ag Quetschmanschetten für die Herstellung von Polysilicium-Granulat
US10345211B2 (en) 2016-03-28 2019-07-09 Hemlock Semiconductor Operations Llc Method of determining a concentration of a material not dissolved by silicon etchants contaminating a product
JP6470223B2 (ja) 2016-04-04 2019-02-13 信越化学工業株式会社 単結晶シリコンの製造方法
CN106000594A (zh) * 2016-05-12 2016-10-12 大工（青岛）新能源材料技术研究院有限公司 一种实现多晶硅无污染小颗粒破碎的方法
JP6413047B1 (ja) * 2016-12-16 2018-10-24 株式会社トクヤマ ポリシリコン破砕物の付着樹脂の分析方法
WO2019154502A1 (de) * 2018-02-08 2019-08-15 Wacker Chemie Ag Verfahren zur klassifizierung von metallurgischem silicium
JP6694002B2 (ja) * 2018-05-21 2020-05-13 信越化学工業株式会社 多結晶シリコンの製造方法
JP7281937B2 (ja) * 2019-03-28 2023-05-26 高純度シリコン株式会社 低炭素高純度多結晶シリコン塊とその製造方法
WO2021037366A1 (de) * 2019-08-29 2021-03-04 Wacker Chemie Ag Verfahren zur herstellung von siliciumbruchstücken
US12187617B2 (en) 2019-10-22 2025-01-07 Hemlock Semiconductor Operations Llc Method and apparatus for removal of surface carbon from polysilicon
WO2021119544A1 (en) * 2019-12-12 2021-06-17 Novartis Ag Injection device and injection solution transferring system
JP7522065B2 (ja) * 2020-03-25 2024-07-24 高純度シリコン株式会社 多結晶シリコン塊のクリーニング方法
JP7125960B2 (ja) * 2020-04-30 2022-08-25 信越化学工業株式会社 多結晶シリコンの収容治具および多結晶シリコンの製造方法
CN112048763B (zh) * 2020-10-09 2022-07-12 西安奕斯伟材料科技有限公司 多晶硅二次加料装置、多晶硅铸锭设备
US20250020616A1 (en) * 2021-09-17 2025-01-16 Tokuyama Corporation Method for measuring surface carbon level of inorganic solid
WO2024135509A1 (ja) * 2022-12-19 2024-06-27 株式会社トクヤマ 多結晶シリコン塊用品質検査室構造
KR20250125995A (ko) * 2022-12-19 2025-08-22 가부시끼가이샤 도꾸야마 다결정 실리콘 괴용 품질 검사실 구조
CN120736528A (zh) * 2023-02-14 2025-10-03 江苏鑫华半导体科技股份有限公司 超高纯电子级多晶硅及其提纯方法、多晶硅棒及其提纯方法
CN117139264B (zh) * 2023-10-27 2024-04-05 宁夏润阳硅材料科技有限公司 一种多晶硅生产过程中超纯水清洗节能降耗系统

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Also Published As

Publication number Publication date
US9209009B2 (en) 2015-12-08
DE102012202640A1 (de) 2013-08-22
KR20130096200A (ko) 2013-08-29
CN103253674B (zh) 2016-03-16
CA2803383C (en) 2015-10-20
US9776876B2 (en) 2017-10-03
US20160052790A1 (en) 2016-02-25
KR101549734B1 (ko) 2015-09-02
CA2803383A1 (en) 2013-08-21
EP2631215A1 (de) 2013-08-28
EP2631215B1 (de) 2014-11-26
CN103253674A (zh) 2013-08-21
US20130216466A1 (en) 2013-08-22
JP2013170122A (ja) 2013-09-02
JP5615946B2 (ja) 2014-10-29

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