ES2543053T3 - Procedimiento para el suministro de impulsos secuenciales de potencia - Google Patents

Procedimiento para el suministro de impulsos secuenciales de potencia Download PDF

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Publication number
ES2543053T3
ES2543053T3 ES12720091.3T ES12720091T ES2543053T3 ES 2543053 T3 ES2543053 T3 ES 2543053T3 ES 12720091 T ES12720091 T ES 12720091T ES 2543053 T3 ES2543053 T3 ES 2543053T3
Authority
ES
Spain
Prior art keywords
power
interval
generator
cathode
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES12720091.3T
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Daniel Lendi
Markus Lechthaler
Kurt Ruhm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Surface Solutions AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102011018363A external-priority patent/DE102011018363A1/de
Priority claimed from DE102011117177A external-priority patent/DE102011117177A1/de
Application filed by Oerlikon Surface Solutions AG Truebbach filed Critical Oerlikon Surface Solutions AG Truebbach
Application granted granted Critical
Publication of ES2543053T3 publication Critical patent/ES2543053T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3485Sputtering using pulsed power to the target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3492Variation of parameters during sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/3467Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surgical Instruments (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electrostatic Separation (AREA)

Abstract

Procedimiento para el suministro de impulsos de potencia con intervalo escalable del impulso de potencia para el funcionamiento de un cátodo de atomización-PVD, comprendiendo el cátodo de atomización-PVD un primer cátodo parcial y un segundo cátodo parcial, en el que para los cátodos parciales está predeterminada una impulsión de potencia media máxima y en el que la duración de los intervalos del impulso de potencia están predeterminados y el procedimiento comprende las siguientes etapas: a) suministrar un generador con cesión de potencia predeterminada, con preferencia constante al menos después del arranque y después de la expiración de un intervalo de formación de la potencia, b) conexión del generador, c) conexión del primer cátodo parcial en el generador, de manera que el primer cátodo parcial es impulsado con potencia desde el generador, d) separación del generador desde el primer cátodo parcial después de la expiración de un primer intervalo del impulso de potencia predeterminado que corresponde al primer cátodo parcial, e) conexión del segundo cátodo racial en el generador, de manera que el segundo cátodo parcial es impulso con potencia desde el generador f) separación del generador desde el segundo cátodo parcial después de la expiración de un segundo intervalo del impulso de potencia predeterminado que corresponde al segundo cátodo parcial en el que el primer intervalo del impulso de potencia comienza en el tiempo antes del segundo intervalo del impulso de potencia y el primer intervalo del impulso de potencia termina en el tiempo antes del segundo intervalo del impulso de potencia, caracterizado porque las etapas d) y e) se realizan de tal manera que el primer intervalo el impulso de potencia y el segundo intervalo del impulso de potencia se solapen en el tiempo y todos los intervalos del impulso de potencia forman conjuntamente un primer grupo, de manera que la cesión de potencia desde el generador se mantiene continuamente sin interrupción desde el comienzo del primer intervalo del impulso de potencia hasta el final del segundo intervalo del impulso de potencia y no tiene lugar un segundo intervalo de formación de la potencia.

Description

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Claims (1)

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ES12720091.3T 2011-04-20 2012-04-04 Procedimiento para el suministro de impulsos secuenciales de potencia Active ES2543053T3 (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102011018363 2011-04-20
DE102011018363A DE102011018363A1 (de) 2011-04-20 2011-04-20 Hochleistungszerstäubungsquelle
DE102011117177 2011-10-28
DE102011117177A DE102011117177A1 (de) 2011-10-28 2011-10-28 Verfahren zur Bereitstellung sequenzieller Leistungspulse
PCT/EP2012/001484 WO2012143091A1 (de) 2011-04-20 2012-04-04 Verfahren zur bereistellung sequenzieller leistungspulse

Publications (1)

Publication Number Publication Date
ES2543053T3 true ES2543053T3 (es) 2015-08-14

Family

ID=46052693

Family Applications (1)

Application Number Title Priority Date Filing Date
ES12720091.3T Active ES2543053T3 (es) 2011-04-20 2012-04-04 Procedimiento para el suministro de impulsos secuenciales de potencia

Country Status (19)

Country Link
US (1) US9267200B2 (es)
EP (1) EP2700083B1 (es)
JP (1) JP5713331B2 (es)
KR (1) KR101537883B1 (es)
CN (1) CN103608893B (es)
AR (1) AR086194A1 (es)
BR (1) BR112013026962B1 (es)
CA (1) CA2833796C (es)
ES (1) ES2543053T3 (es)
HU (1) HUE025643T2 (es)
MX (1) MX346377B (es)
MY (1) MY183993A (es)
PH (1) PH12013502183A1 (es)
PL (1) PL2700083T3 (es)
PT (1) PT2700083E (es)
RU (1) RU2596818C2 (es)
SG (1) SG194568A1 (es)
TW (1) TWI586825B (es)
WO (1) WO2012143091A1 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104272429B (zh) 2011-12-05 2016-08-24 欧瑞康表面解决方案股份公司,普费菲孔 用于反应溅射的方法
DE102012021346A1 (de) * 2012-11-01 2014-08-28 Oerlikon Trading Ag, Trübbach Leistungsverteiler zur definierten sequenziellen Leistungsverteilung
JP6463078B2 (ja) * 2014-10-24 2019-01-30 日立金属株式会社 被覆工具の製造方法
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
SG11201803970RA (en) * 2015-11-12 2018-06-28 Oerlikon Surface Solutions Ag Pfaeffikon Sputtering arrangement and sputtering method for optimized distribution of the energy flow
US11359274B2 (en) * 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US9951414B2 (en) 2015-12-21 2018-04-24 IonQuest LLC Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
CN109154061B (zh) 2016-04-22 2021-07-13 欧瑞康表面处理解决方案股份公司普费菲孔 借助HIPIMS的具有减少的生长缺陷的TiCN
CN116356255A (zh) * 2023-04-04 2023-06-30 东北大学 一种基于高功率脉冲磁控溅射技术的TiCN涂层及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
US5064520A (en) * 1989-02-15 1991-11-12 Hitachi, Ltd. Method and apparatus for forming a film
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
EP1580298A1 (fr) * 2004-03-22 2005-09-28 Materia Nova A.S.B.L Dépôt par pulverisation cathodique magnétron en régime impulsionnel avec préionisation
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
DE102006017382A1 (de) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
EP2272080B1 (de) 2008-04-28 2012-08-01 CemeCon AG Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102011018363A1 (de) 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

Also Published As

Publication number Publication date
JP5713331B2 (ja) 2015-05-07
HUE025643T2 (en) 2016-04-28
RU2013151453A (ru) 2015-05-27
AR086194A1 (es) 2013-11-27
CA2833796A1 (en) 2012-10-26
WO2012143091A8 (de) 2013-11-28
MY183993A (en) 2021-03-17
CA2833796C (en) 2018-07-31
WO2012143091A1 (de) 2012-10-26
MX346377B (es) 2017-03-16
EP2700083B1 (de) 2015-04-22
CN103608893B (zh) 2016-08-31
EP2700083A1 (de) 2014-02-26
KR101537883B1 (ko) 2015-07-17
JP2014514453A (ja) 2014-06-19
SG194568A1 (en) 2013-12-30
BR112013026962A2 (pt) 2017-01-10
PT2700083E (pt) 2015-08-24
CN103608893A (zh) 2014-02-26
BR112013026962B1 (pt) 2021-02-09
PL2700083T3 (pl) 2015-10-30
MX2013012198A (es) 2014-05-28
US20140190819A1 (en) 2014-07-10
PH12013502183A1 (en) 2016-10-07
TW201243082A (en) 2012-11-01
US9267200B2 (en) 2016-02-23
TWI586825B (zh) 2017-06-11
KR20140019806A (ko) 2014-02-17
RU2596818C2 (ru) 2016-09-10

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