ES272455A1 - Procedimiento para la formación de cuerpos semiconductores - Google Patents

Procedimiento para la formación de cuerpos semiconductores

Info

Publication number
ES272455A1
ES272455A1 ES272455A ES272455A ES272455A1 ES 272455 A1 ES272455 A1 ES 272455A1 ES 272455 A ES272455 A ES 272455A ES 272455 A ES272455 A ES 272455A ES 272455 A1 ES272455 A1 ES 272455A1
Authority
ES
Spain
Prior art keywords
semiconductor
conductivity type
growth plane
formation
active impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES272455A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of ES272455A1 publication Critical patent/ES272455A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
ES272455A 1960-11-29 1961-11-14 Procedimiento para la formación de cuerpos semiconductores Expired ES272455A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7234460A 1960-11-29 1960-11-29

Publications (1)

Publication Number Publication Date
ES272455A1 true ES272455A1 (es) 1962-03-01

Family

ID=22106995

Family Applications (1)

Application Number Title Priority Date Filing Date
ES272455A Expired ES272455A1 (es) 1960-11-29 1961-11-14 Procedimiento para la formación de cuerpos semiconductores

Country Status (7)

Country Link
AT (1) AT243317B (2)
BE (1) BE610469A (2)
CH (1) CH397875A (2)
DE (1) DE1419716B2 (2)
ES (1) ES272455A1 (2)
GB (1) GB990119A (2)
SE (1) SE305201B (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
CN112626615A (zh) * 2020-12-09 2021-04-09 黄梦蕾 一种半导体分立器用硅外延生长扩散辅助设备

Also Published As

Publication number Publication date
DE1419716A1 (de) 1968-10-10
GB990119A (en) 1965-04-28
BE610469A (fr) 1962-05-17
CH397875A (fr) 1965-08-31
SE305201B (2) 1968-10-21
DE1419716B2 (de) 1971-12-16
AT243317B (de) 1965-11-10

Similar Documents

Publication Publication Date Title
ES483941A1 (es) Un procedimiento mejorado para la produccion de materiales semiconductores en forma de laminas o cintas
JPS52102690A (en) Semiconductor capacitance device
GB1012124A (en) Improvements in or relating to semiconductor devices
BE766699A (fr) Procede de croissance de couches semiconductrices de composes sur un substrat amorphe
GB942517A (en) A process for the production of a thin layer of a semiconducting compound
ES272455A1 (es) Procedimiento para la formación de cuerpos semiconductores
GB742239A (en) Improvements in barrier layer cells
JPS52131478A (en) Semiconductor device
GB1126338A (en) A method of producing semiconductor bodies with an extremely low-resistance substrate
JPS5322379A (en) Junction type field eff ect transistor
JPS531471A (en) Manufacture for semiconductor device
GB916379A (en) Improvements in and relating to semiconductor junction units
ES381695A1 (es) Perfeccionamientos en la construccion de estructuras para semiconductores.
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS5258363A (en) Formation of semiconductor layer
JPS5311574A (en) Production of semiconductor device
JPS538581A (en) Semiconductor memory unit
JPS5329082A (en) Semiconductor device
JPS5223265A (en) Method of processing semiconductor materials
JPS52104072A (en) High voltage semiconductor device
JPS5357778A (en) Semiconductor memory
JPS5436192A (en) Manufacture for semiconductor
JPS51147292A (en) Semiconductor hall effect element and its manufacturing process
JPS5339086A (en) Semiconductor device