ES273686A1 - Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades - Google Patents

Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades

Info

Publication number
ES273686A1
ES273686A1 ES0273686A ES273686A ES273686A1 ES 273686 A1 ES273686 A1 ES 273686A1 ES 0273686 A ES0273686 A ES 0273686A ES 273686 A ES273686 A ES 273686A ES 273686 A1 ES273686 A1 ES 273686A1
Authority
ES
Spain
Prior art keywords
resistivity
semiconductive
atoms
layer
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0273686A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of ES273686A1 publication Critical patent/ES273686A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procedimiento para formar simultáneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material monocristalino, semiconductivo de diferentes conductividades, separadas por una zona de transición en la cual al menos una de las capas es de material de conductividad N y baja resistividad, mediante deposición de vapor, el cual comprende las fases de disponer dentro de una cámara de reacción una chapa monocristalina semiconductora con una capa superficial de un material monocristalino semiconductivo de conductividad N y de escasa resistividad, adicionado de un elemento impuro, como antimonio, bismuto o mezclas de ambos, para comunicar esta resistividad a dicha capa; introducir en la citada cámara un vapor descomponible que contiene átomos semiconductivos y átomos de impureza activa para comunicar una gran resistividad prefijada a los átomos semiconductivos; y depositar tales átomos del vapor, para formar una capa monocristalina semiconductora de gran resistividadsobre la mencionada capa N poco resistente.
ES0273686A 1960-12-29 1961-12-23 Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades Expired ES273686A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85173A US3271208A (en) 1960-12-29 1960-12-29 Producing an n+n junction using antimony

Publications (1)

Publication Number Publication Date
ES273686A1 true ES273686A1 (es) 1962-05-01

Family

ID=22189924

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0273686A Expired ES273686A1 (es) 1960-12-29 1961-12-23 Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades

Country Status (9)

Country Link
US (1) US3271208A (es)
AT (1) AT245040B (es)
BE (1) BE612167A (es)
CH (1) CH397877A (es)
DK (1) DK126461B (es)
ES (1) ES273686A1 (es)
FR (1) FR1312203A (es)
GB (1) GB1000731A (es)
NL (1) NL273009A (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544253C3 (de) * 1964-09-14 1974-08-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3383571A (en) * 1965-07-19 1968-05-14 Rca Corp High-frequency power transistor with improved reverse-bias second breakdown characteristics
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3515840A (en) * 1965-10-20 1970-06-02 Gti Corp Diode sealer
US3522164A (en) * 1965-10-21 1970-07-28 Texas Instruments Inc Semiconductor surface preparation and device fabrication
US3454434A (en) * 1966-05-09 1969-07-08 Motorola Inc Multilayer semiconductor device
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (es) * 1951-03-07 1900-01-01
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
NL259446A (es) * 1959-12-30 1900-01-01
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member

Also Published As

Publication number Publication date
DE1414921B2 (de) 1971-12-16
NL273009A (es)
GB1000731A (en) 1965-08-11
CH397877A (fr) 1965-08-31
DK126461B (da) 1973-07-16
FR1312203A (fr) 1962-12-14
DE1414921A1 (de) 1969-03-27
BE612167A (fr) 1962-06-29
AT245040B (de) 1966-02-10
US3271208A (en) 1966-09-06

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