ES318922A1 - Procedimiento de preparacion de una aleacion germanio-silicio. - Google Patents

Procedimiento de preparacion de una aleacion germanio-silicio.

Info

Publication number: ES318922A1
Authority: ES; Spain
Prior art keywords: mixture; translation; machine; legally binding; google translate
Prior art date: 1964-10-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

ES0318922A

Other languages

English (en)

Spanish (es)

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Commissariat à l'Énergie Atomique et Aux Énergies Alternatives

Original Assignee

Commissariat a lEnergie Atomique CEA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1964-10-27

Filing date

1965-10-26

Publication date

1967-01-01

1965-10-26 Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA

1967-01-01 Publication of ES318922A1 publication Critical patent/ES318922A1/es

Status Expired legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- C30B29/50—Cadmium sulfide
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive

Landscapes

Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

ES0318922A 1964-10-27 1965-10-26 Procedimiento de preparacion de una aleacion germanio-silicio. Expired ES318922A1 (es)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR992829A FR1420509A (fr)	1964-10-27	1964-10-27	Procédé de fabrication d'alliage germanium-silicium

Publications (1)

Publication Number	Publication Date
ES318922A1 true ES318922A1 (es)	1967-01-01

Family

ID=8841178

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ES0318922A Expired ES318922A1 (es)	1964-10-27	1965-10-26	Procedimiento de preparacion de una aleacion germanio-silicio.

Country Status (9)

Country	Link
US (1)	US3508915A (fr)
BE (1)	BE670718A (fr)
CH (1)	CH448542A (fr)
DE (1)	DE1483201B1 (fr)
ES (1)	ES318922A1 (fr)
FR (1)	FR1420509A (fr)
GB (1)	GB1111678A (fr)
LU (1)	LU49680A1 (fr)
NL (1)	NL6513861A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3898080A (en) *	1968-05-14	1975-08-05	Atomic Energy Authority Uk	Germanium-silicon Thermoelectric elements
US4442449A (en) *	1981-03-16	1984-04-10	Fairchild Camera And Instrument Corp.	Binary germanium-silicon interconnect and electrode structure for integrated circuits
JPS63285923A (ja) *	1987-05-19	1988-11-22	Komatsu Denshi Kinzoku Kk	シリコン−ゲルマニウム合金の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL168491B (fr) *	1951-11-16		Roussel-Uclaf, Societe Anonyme Te Parijs.
US2997410A (en) *	1954-05-03	1961-08-22	Rca Corp	Single crystalline alloys
US2858275A (en) *	1954-12-23	1958-10-28	Siemens Ag	Mixed-crystal semiconductor devices
US3127287A (en) *	1961-06-09	1964-03-31		Thermoelectricity

1964
- 1964-10-27 FR FR992829A patent/FR1420509A/fr not_active Expired
1965
- 1965-10-08 BE BE670718D patent/BE670718A/xx unknown
- 1965-10-11 DE DE19651483201 patent/DE1483201B1/de active Pending
- 1965-10-11 CH CH1397065A patent/CH448542A/fr unknown
- 1965-10-15 US US500487A patent/US3508915A/en not_active Expired - Lifetime
- 1965-10-15 GB GB43837/65A patent/GB1111678A/en not_active Expired
- 1965-10-22 LU LU49680A patent/LU49680A1/xx unknown
- 1965-10-26 NL NL6513861A patent/NL6513861A/xx unknown
- 1965-10-26 ES ES0318922A patent/ES318922A1/es not_active Expired

Also Published As

Publication number	Publication date
LU49680A1 (fr)	1965-12-22
FR1420509A (fr)	1965-12-10
CH448542A (fr)	1967-12-15
BE670718A (fr)	1966-01-31
NL6513861A (fr)	1966-04-28
DE1483201B1 (de)	1969-09-04
US3508915A (en)	1970-04-28
GB1111678A (en)	1968-05-01

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