ES349369A1 - Un metodo para tratar una cara de un cuerpo semiconductor. - Google Patents

Un metodo para tratar una cara de un cuerpo semiconductor.

Info

Publication number
ES349369A1
ES349369A1 ES349369A ES349369A ES349369A1 ES 349369 A1 ES349369 A1 ES 349369A1 ES 349369 A ES349369 A ES 349369A ES 349369 A ES349369 A ES 349369A ES 349369 A1 ES349369 A1 ES 349369A1
Authority
ES
Spain
Prior art keywords
coating
silicon
openings
insulating material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES349369A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES349369A1 publication Critical patent/ES349369A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
ES349369A 1966-03-08 1968-01-16 Un metodo para tratar una cara de un cuerpo semiconductor. Expired ES349369A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53273166A 1966-03-08 1966-03-08
US55649766A 1966-06-09 1966-06-09

Publications (1)

Publication Number Publication Date
ES349369A1 true ES349369A1 (es) 1969-09-16

Family

ID=27063931

Family Applications (2)

Application Number Title Priority Date Filing Date
ES337635A Expired ES337635A1 (es) 1966-03-08 1967-03-06 Un dispositivo semiconductor.
ES349369A Expired ES349369A1 (es) 1966-03-08 1968-01-16 Un metodo para tratar una cara de un cuerpo semiconductor.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES337635A Expired ES337635A1 (es) 1966-03-08 1967-03-06 Un dispositivo semiconductor.

Country Status (6)

Country Link
BR (2) BR6787596D0 (es)
DE (1) DE1614358C3 (es)
ES (2) ES337635A1 (es)
FR (1) FR1516406A (es)
GB (1) GB1142405A (es)
SE (1) SE346659B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping

Also Published As

Publication number Publication date
FR1516406A (fr) 1968-03-08
ES337635A1 (es) 1968-06-16
BR6787595D0 (pt) 1973-01-11
DE1614358B2 (de) 1973-04-05
DE1614358C3 (de) 1974-08-22
DE1614358A1 (de) 1971-05-19
SE346659B (es) 1972-07-10
GB1142405A (en) 1969-02-05
BR6787596D0 (pt) 1973-02-15

Similar Documents

Publication Publication Date Title
US3479237A (en) Etch masks on semiconductor surfaces
GB1208574A (en) Methods of manufacturing semiconductor devices
GB1398019A (en) Process for preparing semiconductor
US3761327A (en) Planar silicon gate mos process
JPS5693344A (en) Manufacture of semiconductor device
US3574010A (en) Fabrication of metal insulator semiconductor field effect transistors
GB1317014A (en) Contact system for semiconductor devices
GB1190893A (en) A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
GB1094068A (en) Semiconductive devices and methods of producing them
GB1428713A (en) Method of manufactruing a semiconductor device
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
GB1253294A (en) Improvements relating to polycrystalline films
US3751314A (en) Silicon semiconductor device processing
ES349369A1 (es) Un metodo para tratar una cara de un cuerpo semiconductor.
GB1090649A (en) Surface treatment for semiconductor devices
US3592707A (en) Precision masking using silicon nitride and silicon oxide
US3714525A (en) Field-effect transistors with self registered gate which acts as diffusion mask during formation
JPS5823931B2 (ja) ハンドウタイキバンジヨウノ ハクソウエツチングホウ
GB1177320A (en) Improvements in or relating to the Production of Planar Semiconductor Components
US3658610A (en) Manufacturing method of semiconductor device
GB1315573A (en) Formation of openings in insulating layers in mos semiconductor devices
US3585089A (en) Method of making fast switching semiconductive devices with silicon nitride passivation
GB1079046A (en) Improvements in and relating to semiconductor devices
GB1211657A (en) Metal etching process for semiconductor devices
JPS6428962A (en) Semiconductor device and manufacture thereof