ES397861A1 - Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio. - Google Patents
Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio.Info
- Publication number
- ES397861A1 ES397861A1 ES397861A ES397861A ES397861A1 ES 397861 A1 ES397861 A1 ES 397861A1 ES 397861 A ES397861 A ES 397861A ES 397861 A ES397861 A ES 397861A ES 397861 A1 ES397861 A1 ES 397861A1
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- light
- useful life
- compound
- device containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
Landscapes
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9354470A | 1970-11-30 | 1970-11-30 | |
| US14196471A | 1971-05-10 | 1971-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES397861A1 true ES397861A1 (es) | 1975-04-16 |
Family
ID=26787656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES397861A Expired ES397861A1 (es) | 1970-11-30 | 1971-11-30 | Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio. |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5131153B1 (2) |
| BE (1) | BE775868A (2) |
| CA (1) | CA920285A (2) |
| CH (1) | CH536035A (2) |
| DE (1) | DE2158681C3 (2) |
| ES (1) | ES397861A1 (2) |
| FR (1) | FR2116159A5 (2) |
| GB (1) | GB1360073A (2) |
| IE (1) | IE35848B1 (2) |
| IT (1) | IT945195B (2) |
| NL (1) | NL155131B (2) |
| PH (1) | PH11254A (2) |
| SE (1) | SE367532B (2) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3776789A (en) * | 1972-05-01 | 1973-12-04 | Ibm | METHOD FOR PROTECTING GaAs WAFER SURFACES |
| FR2287776A1 (fr) * | 1974-10-09 | 1976-05-07 | Lignes Telegraph Telephon | Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees |
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5550089A (en) * | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
| US5451548A (en) * | 1994-03-23 | 1995-09-19 | At&T Corp. | Electron beam deposition of gallium oxide thin films using a single high purity crystal source |
| DE19509864C2 (de) * | 1995-03-17 | 2001-10-04 | Oce Printing Systems Gmbh | Verfahren zur Alterung von lichtemittierenden Dioden |
| WO2002015281A2 (en) * | 2000-08-17 | 2002-02-21 | Power Signal Technologies, Inc. | Glass-to-metal hermetically sealed led array |
| DE10261675B4 (de) * | 2002-12-31 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht |
| CN111725363A (zh) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | 一种微型发光二极管背板及其制造方法 |
-
1971
- 1971-09-01 CA CA121897A patent/CA920285A/en not_active Expired
- 1971-11-22 SE SE14904/71A patent/SE367532B/xx unknown
- 1971-11-25 IE IE1492/71A patent/IE35848B1/xx unknown
- 1971-11-25 NL NL717116220A patent/NL155131B/xx not_active IP Right Cessation
- 1971-11-26 BE BE775868A patent/BE775868A/xx unknown
- 1971-11-26 PH PH13056A patent/PH11254A/en unknown
- 1971-11-26 DE DE2158681A patent/DE2158681C3/de not_active Expired
- 1971-11-29 IT IT54404/71A patent/IT945195B/it active
- 1971-11-29 CH CH1735971A patent/CH536035A/de not_active IP Right Cessation
- 1971-11-29 FR FR7142744A patent/FR2116159A5/fr not_active Expired
- 1971-11-29 GB GB5527371A patent/GB1360073A/en not_active Expired
- 1971-11-30 JP JP46096017A patent/JPS5131153B1/ja active Pending
- 1971-11-30 ES ES397861A patent/ES397861A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1360073A (en) | 1974-07-17 |
| IE35848B1 (en) | 1976-06-09 |
| IE35848L (en) | 1972-05-30 |
| DE2158681A1 (de) | 1972-07-20 |
| JPS5131153B1 (2) | 1976-09-04 |
| NL7116220A (2) | 1972-06-01 |
| CA920285A (en) | 1973-01-30 |
| BE775868A (fr) | 1972-03-16 |
| NL155131B (nl) | 1977-11-15 |
| PH11254A (en) | 1977-10-28 |
| SE367532B (2) | 1974-05-27 |
| DE2158681B2 (de) | 1975-08-14 |
| FR2116159A5 (2) | 1972-07-07 |
| CH536035A (de) | 1973-04-15 |
| DE2158681C3 (de) | 1978-12-07 |
| IT945195B (it) | 1973-05-10 |
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