ES459549A1 - Perfeccionamientos en la construccion de dispositivos optoe-lectronicos. - Google Patents

Perfeccionamientos en la construccion de dispositivos optoe-lectronicos.

Info

Publication number
ES459549A1
ES459549A1 ES459549A ES459549A ES459549A1 ES 459549 A1 ES459549 A1 ES 459549A1 ES 459549 A ES459549 A ES 459549A ES 459549 A ES459549 A ES 459549A ES 459549 A1 ES459549 A1 ES 459549A1
Authority
ES
Spain
Prior art keywords
construction
optoe
lectronic
confinement layers
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES459549A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of ES459549A1 publication Critical patent/ES459549A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Perfeccionamientos en la construcción de dispositivos optooelectrónicos, del tipo que comprende una etereoestructura que tiene una capa activa de material semiconductor emparedada entre una primera y una segunda capa de confinamiento de material semiconductor, cuyas capas de confinamiento son de tipo de conductividad opuesta entre sí y la capa activa del tipo de conductividad opuesta con relación a una de las capas de confinamiento para formar entre las mismas una unión p-n; caracterizados porque se dota a cada dispositivo de por lo menos una barrera de material de elevada absorción de fotones en por lo menos una de las capas de confinamiento para reducir la propagación de la capa de confinamiento.
ES459549A 1976-06-07 1977-06-07 Perfeccionamientos en la construccion de dispositivos optoe-lectronicos. Expired ES459549A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,255A CA1056043A (en) 1976-06-07 1976-06-07 Optoelectronic devices with control of light propagation

Publications (1)

Publication Number Publication Date
ES459549A1 true ES459549A1 (es) 1978-11-16

Family

ID=4106155

Family Applications (1)

Application Number Title Priority Date Filing Date
ES459549A Expired ES459549A1 (es) 1976-06-07 1977-06-07 Perfeccionamientos en la construccion de dispositivos optoe-lectronicos.

Country Status (9)

Country Link
JP (1) JPS5319843A (es)
CA (1) CA1056043A (es)
DE (1) DE2716749A1 (es)
ES (1) ES459549A1 (es)
FR (1) FR2354637A1 (es)
GB (1) GB1578638A (es)
IT (1) IT1076300B (es)
NL (1) NL7703509A (es)
SE (1) SE7706624L (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845736U (ja) * 1981-09-21 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS58164814A (ja) * 1982-03-25 1983-09-29 Fudo Constr Co Ltd 砂杭造成工法
JPS5845737U (ja) * 1981-09-22 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS59203117A (ja) * 1983-05-02 1984-11-17 Fudo Constr Co Ltd 軟弱地盤の改良工法および装置

Also Published As

Publication number Publication date
GB1578638A (en) 1980-11-05
DE2716749A1 (de) 1977-12-15
JPS5319843A (en) 1978-02-23
NL7703509A (nl) 1977-12-09
IT1076300B (it) 1985-04-27
SE7706624L (sv) 1977-12-08
FR2354637A1 (fr) 1978-01-06
CA1056043A (en) 1979-06-05

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