JPS538572A - Field effect type transistor - Google Patents

Field effect type transistor

Info

Publication number
JPS538572A
JPS538572A JP8267776A JP8267776A JPS538572A JP S538572 A JPS538572 A JP S538572A JP 8267776 A JP8267776 A JP 8267776A JP 8267776 A JP8267776 A JP 8267776A JP S538572 A JPS538572 A JP S538572A
Authority
JP
Japan
Prior art keywords
field effect
type transistor
effect type
type
laminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8267776A
Other languages
Japanese (ja)
Inventor
Michio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8267776A priority Critical patent/JPS538572A/en
Publication of JPS538572A publication Critical patent/JPS538572A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To reduce the high-frequency leak by laminating the n-type and p-type GaAs on a semi-insulating substrate, providing the 2nd gate electrode on p-type layer and by giving an inverse bias to PN junction.
COPYRIGHT: (C)1978,JPO&Japio
JP8267776A 1976-07-12 1976-07-12 Field effect type transistor Pending JPS538572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8267776A JPS538572A (en) 1976-07-12 1976-07-12 Field effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8267776A JPS538572A (en) 1976-07-12 1976-07-12 Field effect type transistor

Publications (1)

Publication Number Publication Date
JPS538572A true JPS538572A (en) 1978-01-26

Family

ID=13781034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8267776A Pending JPS538572A (en) 1976-07-12 1976-07-12 Field effect type transistor

Country Status (1)

Country Link
JP (1) JPS538572A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211783A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Compound semiconductor device
JPS5875650A (en) * 1981-10-30 1983-05-07 Mikuni Plast Kk Rotating long shaft with blades
JPS58148465A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS6073963U (en) * 1983-10-27 1985-05-24 株式会社イワキ Rotating body shaft support structure
JPS6141920U (en) * 1985-07-17 1986-03-18 三国プラスチツクス株式会社 Power transmission shaft
US5084744A (en) * 1987-03-20 1992-01-28 Victor Company Of Japan, Ltd. Field effect transistor with active layer apart from guard-ring
JP2002016085A (en) * 2000-06-28 2002-01-18 Sumitomo Electric Ind Ltd Junction type field effect transistor
JP2010062320A (en) * 2008-09-03 2010-03-18 Toshiba Corp Semiconductor device and fabrication method for the same
JP2010062321A (en) * 2008-09-03 2010-03-18 Toshiba Corp Semiconductor device and fabrication method for the same
US8133776B2 (en) 2008-09-03 2012-03-13 Kabushiki Kaisha Toshiba Semiconductor device and fabrication method for the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211783A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Compound semiconductor device
JPS5875650A (en) * 1981-10-30 1983-05-07 Mikuni Plast Kk Rotating long shaft with blades
JPS58148465A (en) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp Semiconductor device
JPS6073963U (en) * 1983-10-27 1985-05-24 株式会社イワキ Rotating body shaft support structure
JPS6141920U (en) * 1985-07-17 1986-03-18 三国プラスチツクス株式会社 Power transmission shaft
US5084744A (en) * 1987-03-20 1992-01-28 Victor Company Of Japan, Ltd. Field effect transistor with active layer apart from guard-ring
JP2002016085A (en) * 2000-06-28 2002-01-18 Sumitomo Electric Ind Ltd Junction type field effect transistor
JP2010062320A (en) * 2008-09-03 2010-03-18 Toshiba Corp Semiconductor device and fabrication method for the same
JP2010062321A (en) * 2008-09-03 2010-03-18 Toshiba Corp Semiconductor device and fabrication method for the same
US8133776B2 (en) 2008-09-03 2012-03-13 Kabushiki Kaisha Toshiba Semiconductor device and fabrication method for the same
US8445341B2 (en) 2008-09-03 2013-05-21 Kabushiki Kaisha Toshiba Semiconductor device and fabrication method for the same

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