ES459808A1 - Procedimiento para desarrollar una capa semiconductora nati-va. - Google Patents

Procedimiento para desarrollar una capa semiconductora nati-va.

Info

Publication number
ES459808A1
ES459808A1 ES459808A ES459808A ES459808A1 ES 459808 A1 ES459808 A1 ES 459808A1 ES 459808 A ES459808 A ES 459808A ES 459808 A ES459808 A ES 459808A ES 459808 A1 ES459808 A1 ES 459808A1
Authority
ES
Spain
Prior art keywords
procedure
nati
developing
semiconductive layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES459808A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES459808A1 publication Critical patent/ES459808A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

Landscapes

  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Procedimiento para desarrollar una capa semiconductora nativa que comprende las fases de colocar un substrato semiconductor en ambiente de oxígeno dirigir un haz de electrones hacia el substrato.
ES459808A 1976-06-15 1977-06-15 Procedimiento para desarrollar una capa semiconductora nati-va. Expired ES459808A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/696,282 US4062747A (en) 1976-06-15 1976-06-15 Native growth of semiconductor oxide layers

Publications (1)

Publication Number Publication Date
ES459808A1 true ES459808A1 (es) 1978-04-01

Family

ID=24796425

Family Applications (1)

Application Number Title Priority Date Filing Date
ES459808A Expired ES459808A1 (es) 1976-06-15 1977-06-15 Procedimiento para desarrollar una capa semiconductora nati-va.

Country Status (11)

Country Link
US (1) US4062747A (es)
JP (1) JPS52153664A (es)
BE (1) BE855582A (es)
CA (1) CA1084816A (es)
DE (1) DE2726265A1 (es)
ES (1) ES459808A1 (es)
FR (1) FR2355377A1 (es)
GB (1) GB1585558A (es)
IT (1) IT1083514B (es)
NL (1) NL7706533A (es)
SE (1) SE7706617L (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210701A (en) * 1972-08-14 1980-07-01 Precision Thin Film Corporation Method and apparatus for depositing film on a substrate, and products produced thereby
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
US4300989A (en) * 1979-10-03 1981-11-17 Bell Telephone Laboratories, Incorporated Fluorine enhanced plasma growth of native layers on silicon
US4323589A (en) * 1980-05-07 1982-04-06 International Business Machines Corporation Plasma oxidation
US4377437A (en) * 1981-05-22 1983-03-22 Bell Telephone Laboratories, Incorporated Device lithography by selective ion implantation
FR2555360B1 (fr) * 1983-11-17 1986-10-10 Berenguer Marc Dispositif pour la realisation de couches dielectriques minces a la surface de corps solides
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4874716A (en) * 1986-04-01 1989-10-17 Texas Instrument Incorporated Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface
US5223458A (en) * 1990-12-18 1993-06-29 Raytheon Company Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species
US5880483A (en) * 1990-12-18 1999-03-09 Shanfield; Stanley R. Semiconductor devices
JP3489334B2 (ja) * 1996-05-27 2004-01-19 ソニー株式会社 半導体装置の酸化膜形成方法および酸化膜形成装置
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US20240120173A1 (en) * 2021-01-29 2024-04-11 Vuereal Inc. Ebeam inspection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
LU69164A1 (es) * 1974-01-15 1974-04-08

Also Published As

Publication number Publication date
JPS52153664A (en) 1977-12-20
FR2355377A1 (fr) 1978-01-13
NL7706533A (nl) 1977-12-19
US4062747A (en) 1977-12-13
DE2726265A1 (de) 1977-12-29
FR2355377B1 (es) 1981-06-12
GB1585558A (en) 1981-03-04
SE7706617L (sv) 1977-12-16
BE855582A (fr) 1977-10-03
CA1084816A (en) 1980-09-02
IT1083514B (it) 1985-05-21

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