ES475103A1 - Metodo de formar unna unidad semiconductora distribuida. - Google Patents

Metodo de formar unna unidad semiconductora distribuida.

Info

Publication number
ES475103A1
ES475103A1 ES475103A ES475103A ES475103A1 ES 475103 A1 ES475103 A1 ES 475103A1 ES 475103 A ES475103 A ES 475103A ES 475103 A ES475103 A ES 475103A ES 475103 A1 ES475103 A1 ES 475103A1
Authority
ES
Spain
Prior art keywords
distributed
forming
sheet
semiconducting unit
semiconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES475103A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES475103A1 publication Critical patent/ES475103A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00Chemistry: electrical and wave energy
    • Y10S204/03Auxiliary internally generated electrical energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Device Packages (AREA)

Abstract

Método de formar una unidad semiconductora distribuida que comprende: (a) formar partículas semiconductoras de tamaño sustancialmente uniforme; (b) moldear dichas partículas como una monocapa en una hoja de suspensión de vidrio de un espesor que corresponde a aproximadamente el espesor de dichas partículas; (c) fundir dicho vidrio para dar rigidez al vidrio en forma de una hoja con dichas partículas distribuidas en ella y con áreas de la superficie de dichas partículas expuestas en ambos lados de dicha hoja; y (d) aplicar una capa metálica en un lado de dicha hoja en contacto con cada una de dichas partículas.
ES475103A 1977-02-14 1978-11-15 Metodo de formar unna unidad semiconductora distribuida. Expired ES475103A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/768,187 US4173494A (en) 1977-02-14 1977-02-14 Glass support light energy converter

Publications (1)

Publication Number Publication Date
ES475103A1 true ES475103A1 (es) 1979-05-01

Family

ID=25081800

Family Applications (2)

Application Number Title Priority Date Filing Date
ES466914A Expired ES466914A1 (es) 1977-02-14 1978-02-13 Un sistema semiconductor
ES475103A Expired ES475103A1 (es) 1977-02-14 1978-11-15 Metodo de formar unna unidad semiconductora distribuida.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES466914A Expired ES466914A1 (es) 1977-02-14 1978-02-13 Un sistema semiconductor

Country Status (9)

Country Link
US (1) US4173494A (es)
JP (1) JPS53121493A (es)
AU (1) AU514810B2 (es)
BR (1) BR7800882A (es)
DE (1) DE2805910A1 (es)
ES (2) ES466914A1 (es)
FR (1) FR2380641B1 (es)
GB (1) GB1599835A (es)
ZA (1) ZA78791B (es)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2927086C2 (de) * 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen
DE2945450A1 (de) * 1979-11-10 1981-05-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von elektrischen kontakten an solarzellen
US4357400A (en) * 1979-12-11 1982-11-02 Electric Power Research Institute, Inc. Photoelectrochemical cell employing discrete semiconductor bodies
US4381233A (en) * 1980-05-19 1983-04-26 Asahi Kasei Kogyo Kabushiki Kaisha Photoelectrolyzer
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3019635A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3100776A1 (de) * 1981-01-13 1982-08-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von folien aus gesintertem polykristallinen silizium
US4454372A (en) * 1981-04-17 1984-06-12 Electric Power Research Institute, Inc. Photovoltaic battery
US4425408A (en) 1981-08-07 1984-01-10 Texas Instruments Incorporated Production of single crystal semiconductors
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US4722776A (en) * 1984-03-14 1988-02-02 The Texas A&M University System One-unit photo-activated electrolyzer
US4994878A (en) * 1984-09-04 1991-02-19 Texas Instruments Incorporated Array interconnect system and method of making same
GB8704830D0 (en) * 1987-03-02 1987-04-08 Gersan Etab Feeder
US4872607A (en) * 1988-02-04 1989-10-10 Texas Instruments Incorporated Method of bonding semiconductor material to an aluminum foil
US5118924A (en) * 1990-10-01 1992-06-02 Eastman Kodak Company Static control overlayers on opto-electronic devices
JPH08125210A (ja) * 1994-10-24 1996-05-17 Jiyousuke Nakada 受光素子及び受光素子アレイ並びにそれらを用いた電解装置
US5674325A (en) * 1995-06-07 1997-10-07 Photon Energy, Inc. Thin film photovoltaic device and process of manufacture
US6204545B1 (en) * 1996-10-09 2001-03-20 Josuke Nakata Semiconductor device
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
US6143580A (en) * 1999-02-17 2000-11-07 Micron Technology, Inc. Methods of forming a mask pattern and methods of forming a field emitter tip mask
DE10052914A1 (de) * 2000-10-25 2002-05-16 Steffen Jaeger Halbleitereinrichtung und Verfahren zu deren Herstellung
US6498643B1 (en) 2000-11-13 2002-12-24 Ball Semiconductor, Inc. Spherical surface inspection system
KR20050004005A (ko) * 2003-07-01 2005-01-12 마츠시타 덴끼 산교 가부시키가이샤 실장체, 광 전송로 및 광 전기 회로기판
EP1521308A1 (de) * 2003-10-02 2005-04-06 Scheuten Glasgroep Kugel- oder kornförmiges Halbleiterbauelement zur Verwendung in Solarzellen und Verfahren zur Herstellung; Verfahren zur Herstellung einer Solarzelle mit Halbleiterbauelement und Solarzelle
EP1521309A1 (de) * 2003-10-02 2005-04-06 Scheuten Glasgroep Serienverschaltung von Solarzellen mit integrierten Halbleiterkörpern, Verfahren zur Herstellung und Photovoltaikmodul mit Serienverschaltung
CN101566303B (zh) * 2008-04-23 2011-01-05 富士迈半导体精密工业(上海)有限公司 照明装置
KR101439386B1 (ko) * 2008-08-08 2014-09-16 스페라 파워 가부시키가이샤 채광형 태양전지 모듈
EP2320471A4 (en) * 2008-08-08 2015-11-04 Sphelar Power Corp SOLAR BATTERY MODULE FOR NATURAL LIGHTING
US8859310B2 (en) 2010-06-14 2014-10-14 Versatilis Llc Methods of fabricating optoelectronic devices using semiconductor-particle monolayers and devices made thereby
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
US9525097B2 (en) * 2013-03-15 2016-12-20 Nthdegree Technologies Worldwide Inc. Photovoltaic module having printed PV cells connected in series by printed conductors
US10100415B2 (en) 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3025335A (en) * 1960-02-29 1962-03-13 Hoffman Electronics Corp Flexible solar energy converter panel
NL298750A (es) * 1962-10-03
NL6510095A (es) * 1965-08-04 1967-02-06
NL6813918A (es) * 1968-09-27 1970-04-01
NL7202215A (es) * 1972-02-19 1973-08-21
US3998659A (en) * 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion

Also Published As

Publication number Publication date
JPS53121493A (en) 1978-10-23
US4173494A (en) 1979-11-06
ZA78791B (en) 1979-01-31
GB1599835A (en) 1981-10-07
AU3324078A (en) 1979-08-23
DE2805910A1 (de) 1978-08-17
ES466914A1 (es) 1979-01-01
FR2380641A1 (fr) 1978-09-08
BR7800882A (pt) 1978-10-10
AU514810B2 (en) 1981-02-26
FR2380641B1 (fr) 1985-07-19

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971201