ES476750A1 - Un dispositivo emisor de luz infrarroja mejorada. - Google Patents

Un dispositivo emisor de luz infrarroja mejorada.

Info

Publication number
ES476750A1
ES476750A1 ES476750A ES476750A ES476750A1 ES 476750 A1 ES476750 A1 ES 476750A1 ES 476750 A ES476750 A ES 476750A ES 476750 A ES476750 A ES 476750A ES 476750 A1 ES476750 A1 ES 476750A1
Authority
ES
Spain
Prior art keywords
light emitting
emitting device
infrared light
confinement
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES476750A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES476750A1 publication Critical patent/ES476750A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

Un dispositivo emisor de luz infrarroja mejorado con una región activa de emisión de luz de material de la solución sólida ternaria In (Sb, As) teniendo una separación reticular adaptada a la de Ga Sb, cuyo material es obtenido por crecimiento epitaxial directa o indirectamente sobre un substrato de Ga Sb.
ES476750A 1978-01-11 1979-01-11 Un dispositivo emisor de luz infrarroja mejorada. Expired ES476750A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB979/78A GB1585723A (en) 1978-01-11 1978-01-11 Infra-red light emissive devices

Publications (1)

Publication Number Publication Date
ES476750A1 true ES476750A1 (es) 1979-07-16

Family

ID=9713900

Family Applications (1)

Application Number Title Priority Date Filing Date
ES476750A Expired ES476750A1 (es) 1978-01-11 1979-01-11 Un dispositivo emisor de luz infrarroja mejorada.

Country Status (7)

Country Link
EP (1) EP0003079B1 (es)
JP (1) JPS5498585A (es)
AU (1) AU522403B2 (es)
CH (1) CH645479A5 (es)
DE (1) DE2860593D1 (es)
ES (1) ES476750A1 (es)
GB (1) GB1585723A (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608674A1 (en) * 1993-01-26 1994-08-03 Interuniversitair Microelektronica Centrum Vzw InAsSb light emitting diodes
US6813296B2 (en) 2002-04-25 2004-11-02 Massachusetts Institute Of Technology GaSb-clad mid-infrared semiconductor laser
JP2007266174A (ja) * 2006-03-28 2007-10-11 Kyocera Corp 発光装置
EA201201243A1 (ru) * 2012-09-07 2013-06-28 Ооо "Лед Микросенсор Нт" ГЕТЕРОСТРУКТУРА НА ОСНОВЕ ТВЁРДОГО РАСТВОРА GaInAsSb, СПОСОБ ЕЁ ИЗГОТОВЛЕНИЯ И СВЕТОДИОД НА ОСНОВЕ ЭТОЙ ГЕТЕРОСТРУКТУРЫ
JP6908367B2 (ja) * 2016-10-19 2021-07-28 旭化成エレクトロニクス株式会社 赤外線発光素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2042517A1 (de) * 1970-08-27 1972-03-02 Pilkuhn M Halbleiterlaser
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Also Published As

Publication number Publication date
CH645479A5 (de) 1984-09-28
JPS5726438B2 (es) 1982-06-04
DE2860593D1 (en) 1981-04-23
JPS5498585A (en) 1979-08-03
AU4264578A (en) 1979-07-19
EP0003079A1 (en) 1979-07-25
GB1585723A (en) 1981-03-11
AU522403B2 (en) 1982-06-03
EP0003079B1 (en) 1981-04-01

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