ES524740A0 - Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas - Google Patents

Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas

Info

Publication number
ES524740A0
ES524740A0 ES524740A ES524740A ES524740A0 ES 524740 A0 ES524740 A0 ES 524740A0 ES 524740 A ES524740 A ES 524740A ES 524740 A ES524740 A ES 524740A ES 524740 A0 ES524740 A0 ES 524740A0
Authority
ES
Spain
Prior art keywords
priorities
producing
thin film
semiconductor device
improved optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES524740A
Other languages
English (en)
Other versions
ES8406798A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of ES524740A0 publication Critical patent/ES524740A0/es
Publication of ES8406798A1 publication Critical patent/ES8406798A1/es
Expired legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/20Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/20Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/25Coatings made of metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48Back surface reflectors [BSR]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/707Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
ES524740A 1982-08-04 1983-08-04 Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas Expired ES8406798A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40507282A 1982-08-04 1982-08-04
US40507582A 1982-08-04 1982-08-04

Publications (2)

Publication Number Publication Date
ES524740A0 true ES524740A0 (es) 1984-08-01
ES8406798A1 ES8406798A1 (es) 1984-08-01

Family

ID=27018915

Family Applications (1)

Application Number Title Priority Date Filing Date
ES524740A Expired ES8406798A1 (es) 1982-08-04 1983-08-04 Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas

Country Status (4)

Country Link
EP (1) EP0102204A1 (es)
AU (1) AU1757283A (es)
CA (1) CA1209681A (es)
ES (1) ES8406798A1 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
JPH0680837B2 (ja) * 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
US4530739A (en) * 1984-03-09 1985-07-23 Energy Conversion Devices, Inc. Method of fabricating an electroplated substrate
US4675263A (en) * 1984-03-12 1987-06-23 Canon Kabushiki Kaisha Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate
US4720443A (en) * 1984-04-05 1988-01-19 Canon Kabushiki Kaisha Member having light receiving layer with nonparallel interfaces
CA1258394A (en) * 1984-06-05 1989-08-15 Yoshio Tsuezuki Light-receiving member
US4678733A (en) * 1984-10-15 1987-07-07 Canon Kabushiki Kaisha Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces
JPS6236676A (ja) * 1985-08-10 1987-02-17 Canon Inc 光導電部材用の支持体及び該支持体を有する光導電部材
JPS6283641A (ja) * 1985-10-08 1987-04-17 Sharp Corp 電界効果型半導体センサ
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
JPS6289064A (ja) * 1985-10-16 1987-04-23 Canon Inc 光受容部材
JPS6290663A (ja) * 1985-10-17 1987-04-25 Canon Inc 光受容部材
JPS62106468A (ja) * 1985-11-01 1987-05-16 Canon Inc 光受容部材
JPS62106470A (ja) * 1985-11-02 1987-05-16 Canon Inc 光受容部材
GB2188924B (en) * 1986-04-08 1990-05-09 Glaverbel Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell
US5336558A (en) * 1991-06-24 1994-08-09 Minnesota Mining And Manufacturing Company Composite article comprising oriented microstructures
FR2694451B1 (fr) * 1992-07-29 1994-09-30 Asulab Sa Cellule photovoltaïque.
AUPN679295A0 (en) * 1995-11-23 1995-12-14 Unisearch Limited Conformal films for light-trapping in thin silicon solar cells
DE19713215A1 (de) * 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
WO2010044269A1 (ja) * 2008-10-17 2010-04-22 株式会社アルバック 太陽電池の製造方法
CN112786730B (zh) * 2020-12-17 2022-11-08 隆基绿能科技股份有限公司 叠层光伏器件
CN113471323B (zh) * 2021-06-30 2023-07-25 电子科技大学 一种光电探测器、具有记忆功能的运算处理器及制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485658A (en) * 1965-07-22 1969-12-23 Du Pont Plural monolayer coated article and process of making
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US4328390A (en) * 1979-09-17 1982-05-04 The University Of Delaware Thin film photovoltaic cell
US4285762A (en) * 1979-12-31 1981-08-25 Exxon Research & Engineering Co. Plasma etching of amorphous silicon (SE-35)

Also Published As

Publication number Publication date
CA1209681A (en) 1986-08-12
ES8406798A1 (es) 1984-08-01
AU1757283A (en) 1984-02-09
EP0102204A1 (en) 1984-03-07

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