ES546703A0 - Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato - Google Patents

Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato

Info

Publication number
ES546703A0
ES546703A0 ES546703A ES546703A ES546703A0 ES 546703 A0 ES546703 A0 ES 546703A0 ES 546703 A ES546703 A ES 546703A ES 546703 A ES546703 A ES 546703A ES 546703 A0 ES546703 A0 ES 546703A0
Authority
ES
Spain
Prior art keywords
depositing
procedure
substrate
transition metal
metal hydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES546703A
Other languages
English (en)
Other versions
ES8606524A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATK Launch Systems LLC
Original Assignee
Morton Thiokol Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Morton Thiokol Inc filed Critical Morton Thiokol Inc
Publication of ES8606524A1 publication Critical patent/ES8606524A1/es
Publication of ES546703A0 publication Critical patent/ES546703A0/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Formation Of Insulating Films (AREA)
ES546703A 1984-09-05 1985-09-04 Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato Expired ES8606524A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64811584A 1984-09-05 1984-09-05

Publications (2)

Publication Number Publication Date
ES8606524A1 ES8606524A1 (es) 1986-04-01
ES546703A0 true ES546703A0 (es) 1986-04-01

Family

ID=24599500

Family Applications (1)

Application Number Title Priority Date Filing Date
ES546703A Expired ES8606524A1 (es) 1984-09-05 1985-09-04 Un procedimiento para depositar un revestimiento de un ni- truro de metal de transicion seleccionado sobre un substrato

Country Status (5)

Country Link
EP (1) EP0174743A3 (es)
JP (1) JPS6169969A (es)
KR (1) KR860002589A (es)
ES (1) ES8606524A1 (es)
IL (1) IL76098A0 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
FR2635119B1 (fr) * 1988-08-04 1993-02-19 France Etat Armement Procede de depot en phase gazeuse de composes du titane
JP2544477B2 (ja) * 1989-03-31 1996-10-16 シャープ株式会社 窒化チタン膜形成方法
US5232872A (en) * 1989-05-09 1993-08-03 Fujitsu Limited Method for manufacturing semiconductor device
KR930005947B1 (ko) * 1989-05-09 1993-06-29 후지쓰 가부시끼가이샤 반도체장치 제조방법
JP2747036B2 (ja) * 1989-07-07 1998-05-06 日本電信電話株式会社 薄膜形成方法
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US5139825A (en) * 1989-11-30 1992-08-18 President And Fellows Of Harvard College Process for chemical vapor deposition of transition metal nitrides
EP0450106A1 (de) * 1990-03-30 1991-10-09 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Herstellung einer Titannitrid-Schicht für höchstintegrierte Schaltungen mittels chemischer Dampfphasenabscheidung
US5089438A (en) * 1991-04-26 1992-02-18 At&T Bell Laboratories Method of making an article comprising a TiNx layer
EP0610728A1 (de) * 1993-02-09 1994-08-17 Siemens Aktiengesellschaft Verfahren zur mikrowellenunterstützten chemischen Abscheidung von Metall- und Metalloidschichten aus der Gasphase
ES2067410B1 (es) * 1993-06-10 1995-11-01 Univ Vigo Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa.
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
EP0711846A1 (en) * 1994-11-14 1996-05-15 Applied Materials, Inc. Titanium nitride deposited by chemical vapor deposition
KR0148325B1 (ko) * 1995-03-04 1998-12-01 김주용 반도체 소자의 금속 배선 형성방법
EP0776991B1 (en) * 1995-12-05 2002-02-06 Applied Materials, Inc. Plasma annealing of thin films
DE19736449A1 (de) * 1997-08-21 1999-02-25 Gfe Met & Mat Gmbh Verbundwerkstoff
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
JP4644359B2 (ja) * 2000-11-30 2011-03-02 ルネサスエレクトロニクス株式会社 成膜方法
DE102005033579A1 (de) * 2005-07-19 2007-01-25 H.C. Starck Gmbh Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
JP5170590B2 (ja) * 2010-12-08 2013-03-27 株式会社トリケミカル研究所 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法
JP5170589B2 (ja) * 2010-12-08 2013-03-27 株式会社トリケミカル研究所 導電性バリア膜形成材料、導電性バリア膜形成方法、及び配線膜形成方法
RU2506344C1 (ru) * 2012-10-25 2014-02-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный технический университет" Способ получения покрытия нитрида титана
CN111620312A (zh) * 2020-06-09 2020-09-04 合肥中航纳米技术发展有限公司 一种纳米氮化铬粉体的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959557A (en) * 1974-11-04 1976-05-25 Minnesota Mining And Manufacturing Company Wear-resistant, nonabrading tic article and process for making
JPS55164072A (en) * 1979-06-08 1980-12-20 Sumitomo Electric Ind Ltd Coating
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4524718A (en) * 1982-11-22 1985-06-25 Gordon Roy G Reactor for continuous coating of glass

Also Published As

Publication number Publication date
ES8606524A1 (es) 1986-04-01
JPS6169969A (ja) 1986-04-10
IL76098A0 (en) 1985-12-31
EP0174743A3 (en) 1988-06-08
EP0174743A2 (en) 1986-03-19
KR860002589A (ko) 1986-04-26

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