ES8201376A1 - Perfeccionamientos en dispositivos conmutadores - Google Patents

Perfeccionamientos en dispositivos conmutadores

Info

Publication number
ES8201376A1
ES8201376A1 ES498097A ES498097A ES8201376A1 ES 8201376 A1 ES8201376 A1 ES 8201376A1 ES 498097 A ES498097 A ES 498097A ES 498097 A ES498097 A ES 498097A ES 8201376 A1 ES8201376 A1 ES 8201376A1
Authority
ES
Spain
Prior art keywords
conductivity
type
region
switching devices
lozalized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES498097A
Other languages
English (en)
Other versions
ES498097A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8201376A1 publication Critical patent/ES8201376A1/es
Publication of ES498097A0 publication Critical patent/ES498097A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Thyristors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

CONSTA DE UN ELEMENTO SEMICONDUCTOR POLICRISTALINO (12) QUE SOSTIENE UN CUERPO SEMICONDUCTOR MONOCRISTALINO (16), CUYA MASA ES DE CONDUCTIVIDAD DEL TIPO N Y QUE ESTA SEPARADO DEL ELEMENTO DE SUSTENCION (12) POR UNA CAPA DIELECTRICA (14); DE UNA PRIMERA REGION ANODICA LOZALIZADA (18) CON CONDUCTIVIDAD DEL TIPO P+; DE UNA SEGUNDA REGION DE PUERTA LOCALIZADA (20) CON CONDUCTIVIDAD DEL TIPO N+; DE UN TERCERA REGION CATODICA LOCALIZADA (24) CON CONDUCTIVIDAD DEL TIPO N+; DE UNA REGION (22) CON CONDUCTIVIDAD DEL TIPO DE UNA REGION (22) CON CONDUCTIVIDAD DEL TIPO P+, QUE RODEA INTIMAMENTE LA TERCERA REGION (24) Y ACTUA COMO ZONA PROTECTORA.
ES498097A 1979-12-28 1980-12-23 Perfeccionamientos en dispositivos conmutadores Granted ES498097A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (2)

Publication Number Publication Date
ES8201376A1 true ES8201376A1 (es) 1981-12-16
ES498097A0 ES498097A0 (es) 1981-12-16

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
ES498097A Granted ES498097A0 (es) 1979-12-28 1980-12-23 Perfeccionamientos en dispositivos conmutadores

Country Status (21)

Country Link
JP (1) JPS56103467A (es)
KR (1) KR840002413B1 (es)
AU (1) AU534874B2 (es)
BE (1) BE886821A (es)
CA (1) CA1145057A (es)
CH (1) CH652863A5 (es)
DD (1) DD156039A5 (es)
DE (1) DE3048702A1 (es)
DK (1) DK549780A (es)
ES (1) ES498097A0 (es)
FR (1) FR2473790A1 (es)
GB (1) GB2066569B (es)
HK (1) HK69684A (es)
HU (1) HU181246B (es)
IE (1) IE50697B1 (es)
IL (1) IL61780A (es)
IT (1) IT1134896B (es)
NL (1) NL8007051A (es)
PL (1) PL228665A1 (es)
SE (1) SE453621B (es)
SG (1) SG35184G (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (es) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (es) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
WO1980001337A1 (en) * 1978-12-20 1980-06-26 Western Electric Co High voltage dielectrically isolated solid-state switch

Also Published As

Publication number Publication date
HU181246B (en) 1983-06-28
KR830004678A (ko) 1983-07-16
BE886821A (fr) 1981-04-16
CH652863A5 (de) 1985-11-29
IL61780A (en) 1983-07-31
SE8008851L (sv) 1981-06-29
IE50697B1 (en) 1986-06-25
PL228665A1 (es) 1981-09-04
DD156039A5 (de) 1982-07-21
CA1145057A (en) 1983-04-19
FR2473790B1 (es) 1985-03-08
KR840002413B1 (ko) 1984-12-27
IT8026947A0 (it) 1980-12-24
GB2066569A (en) 1981-07-08
IT1134896B (it) 1986-08-20
AU6544980A (en) 1981-07-02
ES498097A0 (es) 1981-12-16
GB2066569B (en) 1983-09-14
SG35184G (en) 1985-02-08
DK549780A (da) 1981-06-29
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
AU534874B2 (en) 1984-02-16
HK69684A (en) 1984-09-14
NL8007051A (nl) 1981-07-16
FR2473790A1 (fr) 1981-07-17
DE3048702A1 (de) 1981-09-10
JPS56103467A (en) 1981-08-18
SE453621B (sv) 1988-02-15

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