JPS5344182A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5344182A
JPS5344182A JP11908076A JP11908076A JPS5344182A JP S5344182 A JPS5344182 A JP S5344182A JP 11908076 A JP11908076 A JP 11908076A JP 11908076 A JP11908076 A JP 11908076A JP S5344182 A JPS5344182 A JP S5344182A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
supplies
sense
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11908076A
Other languages
Japanese (ja)
Other versions
JPS5820148B2 (en
Inventor
Akira Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51119080A priority Critical patent/JPS5820148B2/en
Publication of JPS5344182A publication Critical patent/JPS5344182A/en
Publication of JPS5820148B2 publication Critical patent/JPS5820148B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:A semiconductor device which supplies a reference voltage to the sense-amp of a semiconductor memory device is produced in the same process as for memory elements.
JP51119080A 1976-10-04 1976-10-04 semiconductor equipment Expired JPS5820148B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51119080A JPS5820148B2 (en) 1976-10-04 1976-10-04 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51119080A JPS5820148B2 (en) 1976-10-04 1976-10-04 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5344182A true JPS5344182A (en) 1978-04-20
JPS5820148B2 JPS5820148B2 (en) 1983-04-21

Family

ID=14752372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51119080A Expired JPS5820148B2 (en) 1976-10-04 1976-10-04 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5820148B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188166A (en) * 1983-12-26 1984-10-25 Toshiba Corp Semiconductor memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277757U (en) * 1985-10-31 1987-05-18

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ISSCC DIGEST OF TECHNICAL PAPERS=1976 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188166A (en) * 1983-12-26 1984-10-25 Toshiba Corp Semiconductor memory

Also Published As

Publication number Publication date
JPS5820148B2 (en) 1983-04-21

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