ES8303542A1 - Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato. - Google Patents

Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato.

Info

Publication number
ES8303542A1
ES8303542A1 ES503068A ES503068A ES8303542A1 ES 8303542 A1 ES8303542 A1 ES 8303542A1 ES 503068 A ES503068 A ES 503068A ES 503068 A ES503068 A ES 503068A ES 8303542 A1 ES8303542 A1 ES 8303542A1
Authority
ES
Spain
Prior art keywords
plating
source
substrates
chamber
direct current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES503068A
Other languages
English (en)
Other versions
ES503068A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Illinois Tool Works Inc
Original Assignee
Illinois Tool Works Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Illinois Tool Works Inc filed Critical Illinois Tool Works Inc
Publication of ES8303542A1 publication Critical patent/ES8303542A1/es
Publication of ES503068A0 publication Critical patent/ES503068A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemically Coating (AREA)

Abstract

_(UN PROCEDIMIENTO Y SU APARATO CORRESPONDIENTE PARA LA METALIZACION IONICA DE UN SUSTRATO . CONSISTE EN COLOCAR DENTRO DE LA CAMARA UNO O MAS SUSTRATOS JUNTO CON UNA FUENTE DE METALIZACION. SE HACE EL VACIO EN LA CAMARA Y SE CALIENTA EL MATERIAL METALIZADOR PARA VAPORIZARLO. SE APLICA ENERGIA DE RADIO FRECUENCIA A LA FUENTE DE METALIZACION PARA FORMAR UN PLASMA DE IONES METALIZADORES DE CARGA POSITIVA A PARTIR DEL METALIZADOR VAPORIZADO. SE ESTABLECE UNA POLARIZACION POSITIVA EN RELACION DE CORRIENTE CONTINUA EN LA FUENTE DE METALIZACION CON RELACION A LOS SUSTRATOS APLICANDO UN VOLTAJE POSITIVO CONTINUO A LA FUENTE DE METALIZACION PARA CREAR UN CAMINO ELECTRICO ENTRE LA FUENTE Y LOS SUSTRATOS PARA ACELERAR LOS IONES METALIZADORES HACIA LOS SUSTRATOS.
ES503068A 1980-06-16 1981-06-15 Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato. Granted ES503068A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/160,045 US4342631A (en) 1980-06-16 1980-06-16 Gasless ion plating process and apparatus

Publications (2)

Publication Number Publication Date
ES8303542A1 true ES8303542A1 (es) 1983-02-01
ES503068A0 ES503068A0 (es) 1983-02-01

Family

ID=22575275

Family Applications (1)

Application Number Title Priority Date Filing Date
ES503068A Granted ES503068A0 (es) 1980-06-16 1981-06-15 Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato.

Country Status (13)

Country Link
US (1) US4342631A (es)
JP (1) JPS5729575A (es)
AR (1) AR226462A1 (es)
AU (1) AU7087381A (es)
BR (1) BR8103655A (es)
CA (1) CA1161786A (es)
DE (1) DE3123332A1 (es)
ES (1) ES503068A0 (es)
FR (1) FR2484463A1 (es)
GB (1) GB2077770A (es)
IT (1) IT1137244B (es)
NZ (1) NZ197232A (es)
ZA (1) ZA813741B (es)

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US4508932A (en) * 1982-04-19 1985-04-02 The Innovations Foundation Of The University Of Toronto Silicon-based solar energy conversion cells
FR2534599A1 (fr) * 1982-10-14 1984-04-20 Seftim Sa Dispositif de metallisation des surfaces minerales et organiques
US4605565A (en) * 1982-12-09 1986-08-12 Energy Conversion Devices, Inc. Method of depositing a highly conductive, highly transmissive film
US4468309A (en) * 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
FR2550681B1 (fr) * 1983-08-12 1985-12-06 Centre Nat Rech Scient Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs
US4478874A (en) * 1983-12-09 1984-10-23 Cosden Technology, Inc. Methods for improving the gas barrier properties of polymeric containers
US5096558A (en) * 1984-04-12 1992-03-17 Plasco Dr. Ehrich Plasma - Coating Gmbh Method and apparatus for evaporating material in vacuum
US4938859A (en) * 1984-07-31 1990-07-03 Vacuum Optics Corporation Of Japan Ion bombardment device with high frequency
US4612207A (en) * 1985-01-14 1986-09-16 Xerox Corporation Apparatus and process for the fabrication of large area thin film multilayers
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
GB8701414D0 (en) * 1987-01-22 1987-02-25 Matthews A Heating enhancement in physical vapour deposition
US4826365A (en) * 1988-01-20 1989-05-02 White Engineering Corporation Material-working tools and method for lubricating
US5031408A (en) * 1988-04-19 1991-07-16 The Boeing Company Film deposition system
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
DE3831242A1 (de) * 1988-09-14 1990-03-22 Basf Lacke & Farben Kondensationsprodukte auf basis von kolophonium
US5078847A (en) * 1990-08-29 1992-01-07 Jerry Grosman Ion plating method and apparatus
US5105879A (en) * 1991-03-20 1992-04-21 Baker Hughes Incorporated Method and apparatus for sealing at a sliding interface
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
JP2003506883A (ja) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
US7250196B1 (en) 1999-10-26 2007-07-31 Basic Resources, Inc. System and method for plasma plating
US6833031B2 (en) * 2000-03-21 2004-12-21 Wavezero, Inc. Method and device for coating a substrate
US6503379B1 (en) * 2000-05-22 2003-01-07 Basic Research, Inc. Mobile plating system and method
US6521104B1 (en) * 2000-05-22 2003-02-18 Basic Resources, Inc. Configurable vacuum system and method
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US20030180450A1 (en) * 2002-03-22 2003-09-25 Kidd Jerry D. System and method for preventing breaker failure
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US20040231843A1 (en) * 2003-05-22 2004-11-25 Simpson Nell A. A. Lubricant for use in a wellbore
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US20050126497A1 (en) * 2003-09-30 2005-06-16 Kidd Jerry D. Platform assembly and method
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

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Publication number Priority date Publication date Assignee Title
US3962988A (en) * 1973-03-05 1976-06-15 Yoichi Murayama, Nippon Electric Varian Ltd. Ion-plating apparatus having an h.f. electrode for providing an h.f. glow discharge region
DE2549405A1 (de) * 1974-11-05 1976-05-06 Eastman Kodak Co Verfahren zum niederschlagen einer schicht aus photosensitivem material auf einer oberflaeche
US4016389A (en) * 1975-02-21 1977-04-05 White Gerald W High rate ion plating source
US4039416A (en) * 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
JPS5836780B2 (ja) * 1975-08-15 1983-08-11 沖電気工業株式会社 ガゾウヘンカンホウシキ
US4096026A (en) * 1976-07-27 1978-06-20 Toppan Printing Co., Ltd. Method of manufacturing a chromium oxide film

Also Published As

Publication number Publication date
IT1137244B (it) 1986-09-03
US4342631A (en) 1982-08-03
ZA813741B (en) 1983-01-26
IT8122228A0 (it) 1981-06-10
ES503068A0 (es) 1983-02-01
AU7087381A (en) 1981-12-24
NZ197232A (en) 1984-12-14
BR8103655A (pt) 1982-03-02
DE3123332A1 (de) 1982-03-25
JPS5729575A (en) 1982-02-17
GB2077770A (en) 1981-12-23
CA1161786A (en) 1984-02-07
AR226462A1 (es) 1982-07-15
FR2484463A1 (fr) 1981-12-18

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20010402