JPS6431421A - Microwave plasma treatment device - Google Patents

Microwave plasma treatment device

Info

Publication number
JPS6431421A
JPS6431421A JP62187338A JP18733887A JPS6431421A JP S6431421 A JPS6431421 A JP S6431421A JP 62187338 A JP62187338 A JP 62187338A JP 18733887 A JP18733887 A JP 18733887A JP S6431421 A JPS6431421 A JP S6431421A
Authority
JP
Japan
Prior art keywords
plasma
plasma chamber
high frequency
power source
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62187338A
Other languages
Japanese (ja)
Inventor
Sumio Mori
Masami Sasaki
Kiyoushiyoku Kin
Seitaro Matsuo
Chiharu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Anelva Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62187338A priority Critical patent/JPS6431421A/en
Publication of JPS6431421A publication Critical patent/JPS6431421A/en
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Structure Of Printed Boards (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To secure the uniformity of treatment and improve the rate of treatment, by providing a high frequency power source or a direct current power source connected to a plasma chamber and in addition to earthing a substrate holder where a treated substrate is placed and by applying a high frequency voltage or a direct current voltage to the plasma chamber itself. CONSTITUTION:Microwaves generated by a microwave generator 3 are introduced into a plasma chamber 6 through a waveguide 4. Once an electric current is supplied from a power source 12 to an air-core solenoid coil 7 and a magnetic field having a prescribed intensity is generated, the cyclotron resonance of electron is induced and its energy allows an etching gas in the plasma chamber to produce a plasma state with high density. After a high frequency biased voltage is applied from the high frequency electric power 14 to the plasma chamber 6 (or a direct biased voltage is applied from a direct electric power 15), ions are extracted from an outlet 17 of plasma leading circular plates 11. Appearances of extracted plasma are extremely uniformized on a plasma substrate 10 and then the uniformity of etching treatment is exceedingly improved.
JP62187338A 1987-07-27 1987-07-27 Microwave plasma treatment device Pending JPS6431421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187338A JPS6431421A (en) 1987-07-27 1987-07-27 Microwave plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187338A JPS6431421A (en) 1987-07-27 1987-07-27 Microwave plasma treatment device

Publications (1)

Publication Number Publication Date
JPS6431421A true JPS6431421A (en) 1989-02-01

Family

ID=16204251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187338A Pending JPS6431421A (en) 1987-07-27 1987-07-27 Microwave plasma treatment device

Country Status (1)

Country Link
JP (1) JPS6431421A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04235283A (en) * 1990-12-31 1992-08-24 Semiconductor Energy Lab Co Ltd Apparatus and method for forming coating film
JPH0544041A (en) * 1990-12-12 1993-02-23 Semiconductor Energy Lab Co Ltd Film forming device and film formation
CN103269557A (en) * 2013-04-28 2013-08-28 大连民族学院 Radio frequency ion source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544041A (en) * 1990-12-12 1993-02-23 Semiconductor Energy Lab Co Ltd Film forming device and film formation
JPH04235283A (en) * 1990-12-31 1992-08-24 Semiconductor Energy Lab Co Ltd Apparatus and method for forming coating film
CN103269557A (en) * 2013-04-28 2013-08-28 大连民族学院 Radio frequency ion source

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