ES8303820A1 - "dispositivo transistor perfeccionado". - Google Patents
"dispositivo transistor perfeccionado".Info
- Publication number
- ES8303820A1 ES8303820A1 ES508968A ES508968A ES8303820A1 ES 8303820 A1 ES8303820 A1 ES 8303820A1 ES 508968 A ES508968 A ES 508968A ES 508968 A ES508968 A ES 508968A ES 8303820 A1 ES8303820 A1 ES 8303820A1
- Authority
- ES
- Spain
- Prior art keywords
- carriers
- lorentz
- emitter
- carrier injection
- magnetically sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title abstract 5
- 239000007924 injection Substances 0.000 title abstract 5
- 239000000969 carrier Substances 0.000 abstract 4
- 230000003993 interaction Effects 0.000 abstract 1
- 230000026683 transduction Effects 0.000 abstract 1
- 238000010361 transduction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
Landscapes
- Bipolar Transistors (AREA)
- Hall/Mr Elements (AREA)
- Thyristors (AREA)
Abstract
DISPOSITIVO TRANSISTOR. FORMADO POR TRANSISTORES MAGNETICAMENTE SENSIBLES QUE HACEN SU USO DE UN MECANISMO DE TRANSDUCCION MEDIANTE MODULACION, POR POTENCIAL DE CAMPO DE LORENTZ, DE LA INYECCION DE PORTADORES EN LA UNION EMISOR-BASE. SE UTILIZAN COLECTORES (3) DE UN TIPO QUE TRABAJA, SEAN EN ALUD, SEA SIN ALUD, EN UNA ESTRUCTURA QUE TIENE UN SOLO EMISOR (1) Y POR LO MENOS UN COLECTOR (3). LA UNION EMISOR-BASE SE POLARIZA EN SENTIDO DIRECTO PARA INYECTAR PORTADORES, Y LAS UNIONES DE BASE-COLECTOR SE POLARIZAN EN SENTIDO INVERSO PARA RECOGER PORTADORES. LA INYECCION DE PORTADORES ESTA MODULADA POR UN CAMPO DE LORENTZ.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25312881A | 1981-04-13 | 1981-04-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8303820A1 true ES8303820A1 (es) | 1983-02-01 |
| ES508968A0 ES508968A0 (es) | 1983-02-01 |
Family
ID=22958987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES508968A Granted ES508968A0 (es) | 1981-04-13 | 1982-01-22 | "dispositivo transistor perfeccionado". |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0063209B1 (es) |
| JP (1) | JPS57177573A (es) |
| AU (1) | AU547478B2 (es) |
| BR (1) | BR8202017A (es) |
| CA (1) | CA1182585A (es) |
| DE (1) | DE3261792D1 (es) |
| ES (1) | ES508968A0 (es) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58220474A (ja) * | 1982-06-15 | 1983-12-22 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 磁気感応ダイオ−ド |
| JPS59222969A (ja) * | 1983-05-27 | 1984-12-14 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 磁気感応トランジスタ |
| US5390061A (en) | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
| US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
| US5872384A (en) * | 1997-01-17 | 1999-02-16 | Lucent Technologies Inc. | Component arrangement having magnetic field controlled transistor |
| RU2127007C1 (ru) * | 1998-02-17 | 1999-02-27 | Научно-производственный комплекс "Технологический центр" Московского института электронной техники | Магниточувствительный биполярный транзистор |
| RU2204144C2 (ru) * | 2001-04-23 | 2003-05-10 | Таганрогский государственный радиотехнический университет | Интегральный биполярный магнитотранзистор |
| JP4287905B2 (ja) * | 2003-07-31 | 2009-07-01 | 光照 木村 | 半導体磁気センサとこれを用いた磁気計測装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132553B2 (es) * | 1973-05-19 | 1976-09-13 | ||
| US4163986A (en) * | 1978-05-03 | 1979-08-07 | International Business Machines Corporation | Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor |
| US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
-
1982
- 1982-01-22 ES ES508968A patent/ES508968A0/es active Granted
- 1982-02-02 EP EP82100717A patent/EP0063209B1/en not_active Expired
- 1982-02-02 DE DE8282100717T patent/DE3261792D1/de not_active Expired
- 1982-03-12 JP JP57038250A patent/JPS57177573A/ja active Granted
- 1982-03-22 AU AU81780/82A patent/AU547478B2/en not_active Ceased
- 1982-04-07 CA CA000400595A patent/CA1182585A/en not_active Expired
- 1982-04-07 BR BR8202017A patent/BR8202017A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351116B2 (es) | 1991-08-05 |
| CA1182585A (en) | 1985-02-12 |
| AU547478B2 (en) | 1985-10-24 |
| EP0063209B1 (en) | 1985-01-09 |
| JPS57177573A (en) | 1982-11-01 |
| DE3261792D1 (en) | 1985-02-21 |
| ES508968A0 (es) | 1983-02-01 |
| AU8178082A (en) | 1982-10-21 |
| BR8202017A (pt) | 1983-03-15 |
| EP0063209A1 (en) | 1982-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970401 |