JPS6412582A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS6412582A
JPS6412582A JP62169032A JP16903287A JPS6412582A JP S6412582 A JPS6412582 A JP S6412582A JP 62169032 A JP62169032 A JP 62169032A JP 16903287 A JP16903287 A JP 16903287A JP S6412582 A JPS6412582 A JP S6412582A
Authority
JP
Japan
Prior art keywords
radiation
semiconductor crystal
thin films
compound semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62169032A
Other languages
Japanese (ja)
Inventor
Koji Akiyama
Tetsuo Ootsuchi
Yasuichi Oomori
Hiroshi Tsutsui
Matsuki Baba
Masanori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62169032A priority Critical patent/JPS6412582A/en
Publication of JPS6412582A publication Critical patent/JPS6412582A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain excellent sensitivity characteristics and an excellent stability by forming at least one hetero-junction between a radiation-sensitive compound semiconductor crystal and an amorphous thin film. CONSTITUTION:A semiconductor radiation detector 1 is composed of a radiation- sensitive compound semiconductor crystal 2, amorphous thin films 3 and 4 provided on both the facing end surfaces of the compound semiconductor crystal 2 and metal electrodes 5 and 6 formed on the surfaces of the thin films 3 and 4 opposite to the surfaces brought into contact with the crystal 2. The thin films 3 and 4 have a function which efficiently injects carriers created in the semiconductor crystal by absorbing the radiation and, by forming the films 3 and 4 with material having a forbidden band width larger than the forbidden band width of the semiconductor 2, a function which efficiently blocks carriers injected from the electrodes 5 and 6 can be added.
JP62169032A 1987-07-07 1987-07-07 Semiconductor radiation detector Pending JPS6412582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169032A JPS6412582A (en) 1987-07-07 1987-07-07 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169032A JPS6412582A (en) 1987-07-07 1987-07-07 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS6412582A true JPS6412582A (en) 1989-01-17

Family

ID=15879055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169032A Pending JPS6412582A (en) 1987-07-07 1987-07-07 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS6412582A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001242255A (en) * 2000-02-28 2001-09-07 Shimadzu Corp Radiation detector and radiation imaging device
JP2005523438A (en) * 2002-04-18 2005-08-04 フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング Position-sensitive germanium detector with microstructure on both contact surfaces
JPWO2009022377A1 (en) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 Silicon carbide for radiation detection element and radiation detection method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001242255A (en) * 2000-02-28 2001-09-07 Shimadzu Corp Radiation detector and radiation imaging device
JP2005523438A (en) * 2002-04-18 2005-08-04 フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング Position-sensitive germanium detector with microstructure on both contact surfaces
JPWO2009022377A1 (en) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 Silicon carbide for radiation detection element and radiation detection method

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