ES8305157A1 - "metodo para producir un dispositivo semiconductor pin de silicio amorfo". - Google Patents

"metodo para producir un dispositivo semiconductor pin de silicio amorfo".

Info

Publication number
ES8305157A1
ES8305157A1 ES508234A ES508234A ES8305157A1 ES 8305157 A1 ES8305157 A1 ES 8305157A1 ES 508234 A ES508234 A ES 508234A ES 508234 A ES508234 A ES 508234A ES 8305157 A1 ES8305157 A1 ES 8305157A1
Authority
ES
Spain
Prior art keywords
amorphous silicon
manufacture
impurified
conductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES508234A
Other languages
English (en)
Other versions
ES508234A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of ES508234A0 publication Critical patent/ES508234A0/es
Publication of ES8305157A1 publication Critical patent/ES8305157A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROCEDIMIENTO PARA LA OBTENCION DE UN DISPOSITIVO SEMICONDUCTOR PIN DE SILICIO AMORFO. CONSISTE EN LA PREPARACION DE UN SUSTRATO QUE TIENE AL MENOS UNA REGION SUPERFICIAL CON UN MATERIAL CONDUCTOR DE LA ELECTRICIDAD QUE FORMA UN CONTACTO OHMICO CON EL SILICIO AMORFO N>+. FORMAR, POR BOMBARDEO IONICO CON REACCION UNA CAPA DE SILICIO AMORFO IMPURIFICADO N>+; SOBRE ESTA UNA CAPA DE SILICIO AMORFO INTRINSICA, I; SOBRE ESTA UNA CAPA DE SILICIO AMORFO IMPURIFICADO P>+, Y SOBRE ESTA UN MATERIAL CONDUCTOR DE LA ELECTRICIDAD, QUE FORMA UN CONTACTO OHMICO CON EL SILICIO AMORFO IMPURIFICADO P>+. ESTE DISPOSITIVO TIENE APLICACIONES PARA APLICACION EN CELULAS SOLARES.
ES508234A 1981-03-16 1981-12-22 "metodo para producir un dispositivo semiconductor pin de silicio amorfo". Expired ES8305157A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/243,754 US4417092A (en) 1981-03-16 1981-03-16 Sputtered pin amorphous silicon semi-conductor device and method therefor

Publications (2)

Publication Number Publication Date
ES508234A0 ES508234A0 (es) 1983-03-16
ES8305157A1 true ES8305157A1 (es) 1983-03-16

Family

ID=22919989

Family Applications (2)

Application Number Title Priority Date Filing Date
ES508234A Expired ES8305157A1 (es) 1981-03-16 1981-12-22 "metodo para producir un dispositivo semiconductor pin de silicio amorfo".
ES517864A Granted ES517864A0 (es) 1981-03-16 1982-12-01 Dispositivo fotovoltaico pindesilicio amorfo.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES517864A Granted ES517864A0 (es) 1981-03-16 1982-12-01 Dispositivo fotovoltaico pindesilicio amorfo.

Country Status (7)

Country Link
US (1) US4417092A (es)
EP (1) EP0060363B1 (es)
JP (1) JPS57162375A (es)
AU (1) AU548001B2 (es)
CA (1) CA1170786A (es)
DE (1) DE3174747D1 (es)
ES (2) ES8305157A1 (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533450A (en) * 1979-12-31 1985-08-06 Exxon Research And Engineering Co. Control of the hydrogen bonding in reactively sputtered amorphous silicon
US4407710A (en) * 1981-10-15 1983-10-04 Exxon Research And Engineering Co. Hybrid method of making an amorphous silicon P-I-N semiconductor device
JPS58169980A (ja) * 1982-03-19 1983-10-06 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
DE8232497U1 (de) * 1982-11-19 1986-01-30 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem Silizium
DE3242791A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
US4605565A (en) * 1982-12-09 1986-08-12 Energy Conversion Devices, Inc. Method of depositing a highly conductive, highly transmissive film
CA1219547A (en) * 1983-04-04 1987-03-24 Prem Nath Apparatus for and method of continuously depositing a highly conductive, highly transmissive film
US4508609A (en) * 1983-09-26 1985-04-02 Exxon Research & Engineering Co. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets
US4528082A (en) * 1983-09-26 1985-07-09 Exxon Research And Engineering Co. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
DE3535764A1 (de) * 1985-08-14 1987-02-26 Linde Ag Verfahren zum gewinnen von c(pfeil abwaerts)2(pfeil abwaerts)(pfeil abwaerts)+(pfeil abwaerts)-kohlenwasserstoffen
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
US5330855A (en) * 1991-09-23 1994-07-19 The United States Of America, As Represented By The Secretary Of Commerce Planar epitaxial films of SnO2
US6379994B1 (en) * 1995-09-25 2002-04-30 Canon Kabushiki Kaisha Method for manufacturing photovoltaic element
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
CN101449388B (zh) * 2006-03-02 2011-01-19 艾斯莫斯技术有限公司 光敏感面积与光不敏感面积的比例增加的光电二极管
US7893348B2 (en) * 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US9099578B2 (en) 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
US9112103B1 (en) 2013-03-11 2015-08-18 Rayvio Corporation Backside transparent substrate roughening for UV light emitting diode
WO2014145294A2 (en) * 2013-03-15 2014-09-18 Nusola Inc. Manufacturing equipment for photovoltaic devices and methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5582474A (en) * 1978-12-18 1980-06-21 Fuji Photo Film Co Ltd Preparation of photoelectric transducer
US4217148A (en) * 1979-06-18 1980-08-12 Rca Corporation Compensated amorphous silicon solar cell
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors

Also Published As

Publication number Publication date
ES508234A0 (es) 1983-03-16
DE3174747D1 (en) 1986-07-03
AU548001B2 (en) 1985-11-14
JPS57162375A (en) 1982-10-06
EP0060363A1 (en) 1982-09-22
ES8400636A1 (es) 1983-10-16
AU7875481A (en) 1982-09-23
US4417092A (en) 1983-11-22
ES517864A0 (es) 1983-10-16
CA1170786A (en) 1984-07-10
EP0060363B1 (en) 1986-05-28

Similar Documents

Publication Publication Date Title
ES8305157A1 (es) "metodo para producir un dispositivo semiconductor pin de silicio amorfo".
US3025335A (en) Flexible solar energy converter panel
ES2069530T3 (es) Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio.
ES2191716T3 (es) Un procedimiento de fabricacion de celulas solares de capa delgada.
ES2102445T3 (es) Procedimiento para la obtencion de una celula solar, asi como celula solar.
US3647581A (en) Manufacture of semiconductor devices
CA1252874A (en) FAILURE-INSENSITIVE THIN-FILM PHOTOVOLTAIC CELL
ES8406797A1 (es) Perfeccionamientos en un dispositivo fotovoltaico
JPS5868960A (ja) 導電層の生成方法
GB1225061A (en) Manufacturing semiconductor devices
JPS6453468A (en) Solar battery
GB1398006A (en) Semiconductor electroluminescent devices and to methods of making them
KR980011717A (ko) 마스크(Mask)의 구조 및 제조방법
ES8705705A1 (es) Perfeccionamientos en dispositivos semiconductores para aisladores.
KR900003967A (ko) 반도체 장치 및 그 제조 방법
EP0183948A3 (en) Process for the photochemical vapor deposition of aromatic polymers
US3422528A (en) Method of producing semiconductor devices
FR2131406A5 (es)
ES8305535A1 (es) Un metodo de fabricacion de un dispositivo fotovoltaico de sulfuro de cadmio .
JPS57204115A (en) Manufacture of semiconductor device
JPS6484733A (en) Semiconductor device
JPS5676573A (en) Field effect semiconductor device
JPS6480073A (en) Semiconductor device
JPS5493366A (en) Bipolar type transistor
JPS5756969A (en) High withstand voltage type semiconductor device