ES2191716T3 - Un procedimiento de fabricacion de celulas solares de capa delgada. - Google Patents

Un procedimiento de fabricacion de celulas solares de capa delgada.

Info

Publication number
ES2191716T3
ES2191716T3 ES95936166T ES95936166T ES2191716T3 ES 2191716 T3 ES2191716 T3 ES 2191716T3 ES 95936166 T ES95936166 T ES 95936166T ES 95936166 T ES95936166 T ES 95936166T ES 2191716 T3 ES2191716 T3 ES 2191716T3
Authority
ES
Spain
Prior art keywords
layer
solar cells
delgada
capa
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95936166T
Other languages
English (en)
Inventor
Marika Bodegaard
Jonas Hedstrom
Lars Stolt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordic Solar Energy AB
Original Assignee
Nordic Solar Energy AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordic Solar Energy AB filed Critical Nordic Solar Energy AB
Application granted granted Critical
Publication of ES2191716T3 publication Critical patent/ES2191716T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

SE PRESENTA UN METODO PARA MANUFACTURAR CELULAS SOLARES DE PELICULA FINA, EN EL QUE SE APLICA UNA CAPA DE SELENURO DE INDIO DE COBRE (CUINSE{SUB, 2}) (3) EN UN PASO DE MANUFACTURACION SOBRE UNA ESTRUCTURA QUE INCLUYE UNA CAPA DE METAL (2) QUE FORMA UN CONTACTO DE RESPALDO ELECTRICO EN LA CELULA SOLAR, ESTE CONTACTO DE RESPALDO SE APLICA A UN SUBSTRATO (1). LA INVENCION SE CARACTERIZA EN QUE LA CAPA (6) QUE CONTIENE METAL ALCALI SE FORMA LA ESTRUCTURA ANTES DE APLICAR LA CAPA DE CUINSE{SUB, 2} (3).
ES95936166T 1994-10-21 1995-10-20 Un procedimiento de fabricacion de celulas solares de capa delgada. Expired - Lifetime ES2191716T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9403609A SE508676C2 (sv) 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller

Publications (1)

Publication Number Publication Date
ES2191716T3 true ES2191716T3 (es) 2003-09-16

Family

ID=20395698

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95936166T Expired - Lifetime ES2191716T3 (es) 1994-10-21 1995-10-20 Un procedimiento de fabricacion de celulas solares de capa delgada.

Country Status (8)

Country Link
US (1) US5994163A (es)
EP (1) EP0787354B1 (es)
JP (1) JP3690807B2 (es)
AU (1) AU3820595A (es)
DE (1) DE69529529T2 (es)
ES (1) ES2191716T3 (es)
SE (1) SE508676C2 (es)
WO (1) WO1996013063A1 (es)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4447865B4 (de) * 1994-11-16 2006-06-14 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Verbindungshalbleiter-Dünnschichtsolarzelle mit Alkalimetallzusatz und Verfahren zur Herstellung
JP3519543B2 (ja) * 1995-06-08 2004-04-19 松下電器産業株式会社 半導体薄膜形成用前駆体及び半導体薄膜の製造方法
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
WO2003069684A1 (fr) * 2002-02-14 2003-08-21 Honda Giken Kogyo Kabushiki Kaisha Procédé de formation de couche absorbant la lumière
US20060057766A1 (en) * 2003-07-08 2006-03-16 Quanxi Jia Method for preparation of semiconductive films
SE525704C2 (sv) * 2003-08-12 2005-04-05 Sandvik Ab Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller
US20050056863A1 (en) * 2003-09-17 2005-03-17 Matsushita Electric Industrial Co., Ltd. Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US8372734B2 (en) 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7700464B2 (en) 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
US20080053516A1 (en) 2006-08-30 2008-03-06 Richard Allen Hayes Solar cell modules comprising poly(allyl amine) and poly (vinyl amine)-primed polyester films
US8197928B2 (en) 2006-12-29 2012-06-12 E. I. Du Pont De Nemours And Company Intrusion resistant safety glazings and solar cell modules
US8771419B2 (en) * 2007-10-05 2014-07-08 Solopower Systems, Inc. Roll to roll evaporation tool for solar absorber precursor formation
AT10578U1 (de) * 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
US8197885B2 (en) * 2008-01-11 2012-06-12 Climax Engineered Materials, Llc Methods for producing sodium/molybdenum power compacts
US20090242030A1 (en) * 2008-03-26 2009-10-01 E. I. Du Pont De Nemours And Company High performance anti-spall laminate article
CN102832281A (zh) * 2008-04-04 2012-12-19 纳幕尔杜邦公司 包含高熔体流动速率的聚(乙烯醇缩丁醛)包封材料的太阳能电池模块
JP4384237B2 (ja) * 2008-05-19 2009-12-16 昭和シェル石油株式会社 Cis系薄膜太陽電池の製造方法
US20090288701A1 (en) * 2008-05-23 2009-11-26 E.I.Du Pont De Nemours And Company Solar cell laminates having colored multi-layer encapsulant sheets
US8445776B2 (en) 2008-06-02 2013-05-21 E I Du Pont De Nemours And Company Solar cell module having a low haze encapsulant layer
US8298856B2 (en) 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
US20100101647A1 (en) * 2008-10-24 2010-04-29 E.I. Du Pont De Nemours And Company Non-autoclave lamination process for manufacturing solar cell modules
EP2342209A1 (en) 2008-10-31 2011-07-13 E. I. du Pont de Nemours and Company Solar cells modules comprising low haze encapsulants
US8084129B2 (en) * 2008-11-24 2011-12-27 E. I. Du Pont De Nemours And Company Laminated articles comprising a sheet of a blend of ethylene copolymers
US8080727B2 (en) 2008-11-24 2011-12-20 E. I. Du Pont De Nemours And Company Solar cell modules comprising an encapsulant sheet of a blend of ethylene copolymers
US20100154867A1 (en) * 2008-12-19 2010-06-24 E. I. Du Pont De Nemours And Company Mechanically reliable solar cell modules
CN102272946B (zh) * 2008-12-31 2013-11-27 纳幕尔杜邦公司 包括具有低雾度和高耐湿性的包封片材的太阳能电池模块
CN102292827A (zh) * 2009-01-22 2011-12-21 纳幕尔杜邦公司 用于太阳能电池模块的包含螯合剂的聚(乙烯醇缩丁醛)包封剂
JP5229901B2 (ja) * 2009-03-09 2013-07-03 富士フイルム株式会社 光電変換素子、及び太陽電池
US8709856B2 (en) * 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
JP4629151B2 (ja) * 2009-03-10 2011-02-09 富士フイルム株式会社 光電変換素子及び太陽電池、光電変換素子の製造方法
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US8247243B2 (en) 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
US9284639B2 (en) * 2009-07-30 2016-03-15 Apollo Precision Kunming Yuanhong Limited Method for alkali doping of thin film photovoltaic materials
BR112012002097A2 (pt) * 2009-07-31 2019-09-24 Du Pont composição de mescla, produto de reticulação da composição de mescla processo para produzir uma folha, folha formada pelo processo modulo de culula solar processo para a reparação de um modulo de celula solar, modulo de controle solar processo para produzir a composição de mescla, folha extrudada e folha extrudada de multiplas camadas
KR101306913B1 (ko) * 2009-09-02 2013-09-10 한국전자통신연구원 태양 전지
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
US20110203655A1 (en) * 2010-02-22 2011-08-25 First Solar, Inc. Photovoltaic device protection layer
DE102010017246A1 (de) * 2010-06-04 2011-12-08 Solibro Gmbh Solarzellenmodul und Herstellungsverfahren hierfür
US8609980B2 (en) 2010-07-30 2013-12-17 E I Du Pont De Nemours And Company Cross-linkable ionomeric encapsulants for photovoltaic cells
TWI538235B (zh) 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
US20130000702A1 (en) * 2011-06-30 2013-01-03 Miasole Photovoltaic device with resistive cigs layer at the back contact
WO2014100301A1 (en) 2012-12-19 2014-06-26 E. I. Du Pont De Nemours And Company Cross-linked polymers and their use in photovoltaic modules
KR102248704B1 (ko) 2012-12-21 2021-05-06 프리솜 에이쥐 칼륨이 첨가되는 박막 광전자 소자의 제조
WO2015095607A1 (en) * 2013-12-20 2015-06-25 Uriel Solar, Inc. Multi-junction photovoltaic cells
WO2015171575A1 (en) 2014-05-09 2015-11-12 E. I. Du Pont De Nemours And Company Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 Flisom Ag 用於製造薄膜裝置之自組裝圖案化
EP3245312A1 (en) 2015-01-12 2017-11-22 Nuvosun, Inc. High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors
WO2017137271A1 (en) 2016-02-11 2017-08-17 Flisom Ag Self-Assembly Patterning for Fabricating Thin-Film Devices
EP3414780B1 (en) 2016-02-11 2020-12-02 Flisom AG Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
WO2017147037A1 (en) 2016-02-26 2017-08-31 Dow Global Technologies Llc Method for improving stability of photovoltaic articles incorporating chalcogenide semiconductors
JP7447007B2 (ja) 2018-03-08 2024-03-11 ダウ グローバル テクノロジーズ エルエルシー 電圧誘起出力低下耐性が改善された太陽光発電モジュールおよび封止材組成物
EP4693418A1 (en) * 2023-03-31 2026-02-11 Idemitsu Kosan Co.,Ltd. Photoelectric conversion element, photovoltaic module, flying object and method for manufacturing photoelectric conversion element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623601A (en) * 1985-06-04 1986-11-18 Atlantic Richfield Company Photoconductive device containing zinc oxide transparent conductive layer
US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US4873118A (en) * 1988-11-18 1989-10-10 Atlantic Richfield Company Oxygen glow treating of ZnO electrode for thin film silicon solar cell
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Also Published As

Publication number Publication date
SE9403609L (sv) 1996-04-22
US5994163A (en) 1999-11-30
WO1996013063A1 (en) 1996-05-02
SE9403609D0 (sv) 1994-10-21
SE508676C2 (sv) 1998-10-26
DE69529529D1 (de) 2003-03-06
JPH10512096A (ja) 1998-11-17
EP0787354B1 (en) 2003-01-29
EP0787354A1 (en) 1997-08-06
AU3820595A (en) 1996-05-15
JP3690807B2 (ja) 2005-08-31
DE69529529T2 (de) 2003-12-11

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