ES2191716T3 - Un procedimiento de fabricacion de celulas solares de capa delgada. - Google Patents
Un procedimiento de fabricacion de celulas solares de capa delgada.Info
- Publication number
- ES2191716T3 ES2191716T3 ES95936166T ES95936166T ES2191716T3 ES 2191716 T3 ES2191716 T3 ES 2191716T3 ES 95936166 T ES95936166 T ES 95936166T ES 95936166 T ES95936166 T ES 95936166T ES 2191716 T3 ES2191716 T3 ES 2191716T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- solar cells
- delgada
- capa
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
SE PRESENTA UN METODO PARA MANUFACTURAR CELULAS SOLARES DE PELICULA FINA, EN EL QUE SE APLICA UNA CAPA DE SELENURO DE INDIO DE COBRE (CUINSE{SUB, 2}) (3) EN UN PASO DE MANUFACTURACION SOBRE UNA ESTRUCTURA QUE INCLUYE UNA CAPA DE METAL (2) QUE FORMA UN CONTACTO DE RESPALDO ELECTRICO EN LA CELULA SOLAR, ESTE CONTACTO DE RESPALDO SE APLICA A UN SUBSTRATO (1). LA INVENCION SE CARACTERIZA EN QUE LA CAPA (6) QUE CONTIENE METAL ALCALI SE FORMA LA ESTRUCTURA ANTES DE APLICAR LA CAPA DE CUINSE{SUB, 2} (3).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9403609A SE508676C2 (sv) | 1994-10-21 | 1994-10-21 | Förfarande för framställning av tunnfilmssolceller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2191716T3 true ES2191716T3 (es) | 2003-09-16 |
Family
ID=20395698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES95936166T Expired - Lifetime ES2191716T3 (es) | 1994-10-21 | 1995-10-20 | Un procedimiento de fabricacion de celulas solares de capa delgada. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5994163A (es) |
| EP (1) | EP0787354B1 (es) |
| JP (1) | JP3690807B2 (es) |
| AU (1) | AU3820595A (es) |
| DE (1) | DE69529529T2 (es) |
| ES (1) | ES2191716T3 (es) |
| SE (1) | SE508676C2 (es) |
| WO (1) | WO1996013063A1 (es) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4440878C2 (de) * | 1994-11-16 | 1999-04-29 | Zsw | Verbindungshalbleiter-Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung |
| JP3519543B2 (ja) * | 1995-06-08 | 2004-04-19 | 松下電器産業株式会社 | 半導体薄膜形成用前駆体及び半導体薄膜の製造方法 |
| US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
| WO2003007386A1 (en) * | 2001-07-13 | 2003-01-23 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
| JP3876440B2 (ja) * | 2002-02-14 | 2007-01-31 | 本田技研工業株式会社 | 光吸収層の作製方法 |
| US20060057766A1 (en) * | 2003-07-08 | 2006-03-16 | Quanxi Jia | Method for preparation of semiconductive films |
| SE525704C2 (sv) * | 2003-08-12 | 2005-04-05 | Sandvik Ab | Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller |
| US20050056863A1 (en) * | 2003-09-17 | 2005-03-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell |
| US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
| US7306823B2 (en) * | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
| US8309163B2 (en) * | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
| US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| US7605328B2 (en) | 2004-02-19 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
| US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
| US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
| US7604843B1 (en) | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
| US7700464B2 (en) | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
| US8623448B2 (en) * | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
| US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
| US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
| US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
| US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
| US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
| US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
| US20080053516A1 (en) | 2006-08-30 | 2008-03-06 | Richard Allen Hayes | Solar cell modules comprising poly(allyl amine) and poly (vinyl amine)-primed polyester films |
| US8197928B2 (en) | 2006-12-29 | 2012-06-12 | E. I. Du Pont De Nemours And Company | Intrusion resistant safety glazings and solar cell modules |
| US8771419B2 (en) * | 2007-10-05 | 2014-07-08 | Solopower Systems, Inc. | Roll to roll evaporation tool for solar absorber precursor formation |
| AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
| US8197885B2 (en) * | 2008-01-11 | 2012-06-12 | Climax Engineered Materials, Llc | Methods for producing sodium/molybdenum power compacts |
| CA2716191A1 (en) * | 2008-03-26 | 2009-10-01 | E. I. Du Pont De Nemours And Company | High performance anti-spall laminate article |
| US20090250100A1 (en) * | 2008-04-04 | 2009-10-08 | E.I. Du Pont De Nemours And Company | Solar cell modules comprising high melt flow poly(vinyl butyral) encapsulants |
| JP4384237B2 (ja) * | 2008-05-19 | 2009-12-16 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
| US20090288701A1 (en) * | 2008-05-23 | 2009-11-26 | E.I.Du Pont De Nemours And Company | Solar cell laminates having colored multi-layer encapsulant sheets |
| WO2009149000A2 (en) | 2008-06-02 | 2009-12-10 | E. I. Du Pont De Nemours And Company | Solar cell module having a low haze encapsulant layer |
| US8664524B2 (en) | 2008-07-17 | 2014-03-04 | Uriel Solar, Inc. | High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
| US20100101647A1 (en) * | 2008-10-24 | 2010-04-29 | E.I. Du Pont De Nemours And Company | Non-autoclave lamination process for manufacturing solar cell modules |
| EP2342209A1 (en) | 2008-10-31 | 2011-07-13 | E. I. du Pont de Nemours and Company | Solar cells modules comprising low haze encapsulants |
| US8080727B2 (en) | 2008-11-24 | 2011-12-20 | E. I. Du Pont De Nemours And Company | Solar cell modules comprising an encapsulant sheet of a blend of ethylene copolymers |
| US8084129B2 (en) * | 2008-11-24 | 2011-12-27 | E. I. Du Pont De Nemours And Company | Laminated articles comprising a sheet of a blend of ethylene copolymers |
| US20100154867A1 (en) * | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
| KR101629532B1 (ko) * | 2008-12-31 | 2016-06-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 낮은 탁도 및 높은 내습성을 갖는 봉지제 시트를 포함하는 태양 전지 모듈 |
| EP2380207A4 (en) * | 2009-01-22 | 2012-07-11 | Du Pont | POLY (VINYL BUTYRAL) -APPLICATION FUEL WITH CHELATINES FOR SOLAR CELL MODULES |
| JP5229901B2 (ja) * | 2009-03-09 | 2013-07-03 | 富士フイルム株式会社 | 光電変換素子、及び太陽電池 |
| US8709856B2 (en) * | 2009-03-09 | 2014-04-29 | Zetta Research and Development LLC—AQT Series | Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques |
| JP4629151B2 (ja) * | 2009-03-10 | 2011-02-09 | 富士フイルム株式会社 | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
| US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
| US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
| US9284639B2 (en) * | 2009-07-30 | 2016-03-15 | Apollo Precision Kunming Yuanhong Limited | Method for alkali doping of thin film photovoltaic materials |
| CN102859863A (zh) * | 2009-07-31 | 2013-01-02 | 纳幕尔杜邦公司 | 用于光伏电池的可交联包封材料 |
| KR101306913B1 (ko) * | 2009-09-02 | 2013-09-10 | 한국전자통신연구원 | 태양 전지 |
| US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
| US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
| DE102010017246A1 (de) * | 2010-06-04 | 2011-12-08 | Solibro Gmbh | Solarzellenmodul und Herstellungsverfahren hierfür |
| US8609980B2 (en) | 2010-07-30 | 2013-12-17 | E I Du Pont De Nemours And Company | Cross-linkable ionomeric encapsulants for photovoltaic cells |
| TWI538235B (zh) | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
| US20130000702A1 (en) * | 2011-06-30 | 2013-01-03 | Miasole | Photovoltaic device with resistive cigs layer at the back contact |
| WO2014100309A1 (en) | 2012-12-19 | 2014-06-26 | E. I. Du Pont De Nemours And Company | Cross-linkable acid copolymer composition and its use in glass laminates |
| TWI654771B (zh) | 2012-12-21 | 2019-03-21 | 瑞士商弗里松股份有限公司 | 附加著鉀之薄膜光電裝置的製造 |
| US20150207011A1 (en) * | 2013-12-20 | 2015-07-23 | Uriel Solar, Inc. | Multi-junction photovoltaic cells and methods for forming the same |
| WO2015171575A1 (en) | 2014-05-09 | 2015-11-12 | E. I. Du Pont De Nemours And Company | Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer |
| TWI677105B (zh) | 2014-05-23 | 2019-11-11 | 瑞士商弗里松股份有限公司 | 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置 |
| TWI661991B (zh) | 2014-09-18 | 2019-06-11 | Flisom Ag | 用於製造薄膜裝置之自組裝圖案化 |
| CN107406965A (zh) | 2015-01-12 | 2017-11-28 | 纽升股份有限公司 | 可用于制造硫属化物半导体的含碱金属的前体膜的高速溅射沉积 |
| US10658532B2 (en) | 2016-02-11 | 2020-05-19 | Flisom Ag | Fabricating thin-film optoelectronic devices with added rubidium and/or cesium |
| EP3414779B1 (en) | 2016-02-11 | 2021-01-13 | Flisom AG | Self-assembly patterning for fabricating thin-film devices |
| WO2017147037A1 (en) | 2016-02-26 | 2017-08-31 | Dow Global Technologies Llc | Method for improving stability of photovoltaic articles incorporating chalcogenide semiconductors |
| ES2943469T3 (es) | 2018-03-08 | 2023-06-13 | Dow Global Technologies Llc | Módulo fotovoltaico y composición encapsulante que tienen resistencia mejorada a la degradación inducida por potencial |
| JPWO2024203785A1 (es) * | 2023-03-31 | 2024-10-03 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
| US4915745A (en) * | 1988-09-22 | 1990-04-10 | Atlantic Richfield Company | Thin film solar cell and method of making |
| US4873118A (en) * | 1988-11-18 | 1989-10-10 | Atlantic Richfield Company | Oxygen glow treating of ZnO electrode for thin film silicon solar cell |
| US5028274A (en) * | 1989-06-07 | 1991-07-02 | International Solar Electric Technology, Inc. | Group I-III-VI2 semiconductor films for solar cell application |
| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
-
1994
- 1994-10-21 SE SE9403609A patent/SE508676C2/sv not_active IP Right Cessation
-
1995
- 1995-10-20 WO PCT/SE1995/001242 patent/WO1996013063A1/en not_active Ceased
- 1995-10-20 EP EP95936166A patent/EP0787354B1/en not_active Expired - Lifetime
- 1995-10-20 AU AU38205/95A patent/AU3820595A/en not_active Abandoned
- 1995-10-20 ES ES95936166T patent/ES2191716T3/es not_active Expired - Lifetime
- 1995-10-20 US US08/817,693 patent/US5994163A/en not_active Expired - Lifetime
- 1995-10-20 DE DE69529529T patent/DE69529529T2/de not_active Expired - Lifetime
- 1995-10-20 JP JP51383596A patent/JP3690807B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0787354A1 (en) | 1997-08-06 |
| JP3690807B2 (ja) | 2005-08-31 |
| SE9403609L (sv) | 1996-04-22 |
| AU3820595A (en) | 1996-05-15 |
| DE69529529D1 (de) | 2003-03-06 |
| EP0787354B1 (en) | 2003-01-29 |
| JPH10512096A (ja) | 1998-11-17 |
| SE9403609D0 (sv) | 1994-10-21 |
| DE69529529T2 (de) | 2003-12-11 |
| US5994163A (en) | 1999-11-30 |
| WO1996013063A1 (en) | 1996-05-02 |
| SE508676C2 (sv) | 1998-10-26 |
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