ES8401680A1 - "un metodo de fabricacion de una pila solar". - Google Patents

"un metodo de fabricacion de una pila solar".

Info

Publication number
ES8401680A1
ES8401680A1 ES515992A ES515992A ES8401680A1 ES 8401680 A1 ES8401680 A1 ES 8401680A1 ES 515992 A ES515992 A ES 515992A ES 515992 A ES515992 A ES 515992A ES 8401680 A1 ES8401680 A1 ES 8401680A1
Authority
ES
Spain
Prior art keywords
substrate
group constituted
valencia
vaporize
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES515992A
Other languages
English (en)
Other versions
ES515992A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES8401680A1 publication Critical patent/ES8401680A1/es
Publication of ES515992A0 publication Critical patent/ES515992A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Photovoltaic Devices (AREA)

Abstract

METODO DE FABRICACION DE UNA PILA SOLAR. SE FORMA UNA CAPA DE UN METAL M SEGUN LA REACCION (I) EN DONDE M SE SELECCIONA DEL GRUPO CONSTITUIDO POR ELEMENTOS DE LOS GRUPOS III, IV Y V DE LA TABLA PERIODICA, CADA X SE SELECCIONA INDEPENDIENTEMENTE DEL GRUPO CONSTITUIDO POR CLORO, BROMO Y YODO, R SE SELECCIONA DEL GRUPO CONSTITUIDO POR HIDROGENO Y LOS ELEMENTOS DE LOS GRUPOS I Y II DE LA TABLA PERIODICA HASTA NUMERO ATOMICO 30, N ES LA VALENCIA DE M Y M ES N/VALENCIA DE R, CALENTANDO UN SUSTRATO HASTA UNA TEMPERATURA ALTA PARA VAPORIZAR EL MRXN/M, SIENDO CALENTADO DICHO MR SOBRE UNA CARA DEL SUSTRATO, QUE ES PERMEABLE A DICHO MR LO SUFICIENTE PARA QUE ESTE SE DIFUNDA A TRAVES DE DICHO SUSTRATO, QUE ES INERTE PARA LOS REACTIVOS, Y SEPARANDO DICHO SUSTRATO INERTE DE DICHO MXN, PARA POR ULTIMO CALENTAR ESTE SOBRE LA OTRA CARA DE DICHO SUSTRATO LO SUFICIENTE PARA VAPORIZARLO.
ES515992A 1981-09-29 1982-09-28 "un metodo de fabricacion de una pila solar". Granted ES515992A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/307,139 US4374163A (en) 1981-09-29 1981-09-29 Method of vapor deposition

Publications (2)

Publication Number Publication Date
ES8401680A1 true ES8401680A1 (es) 1983-12-16
ES515992A0 ES515992A0 (es) 1983-12-16

Family

ID=23188410

Family Applications (1)

Application Number Title Priority Date Filing Date
ES515992A Granted ES515992A0 (es) 1981-09-29 1982-09-28 "un metodo de fabricacion de una pila solar".

Country Status (5)

Country Link
US (1) US4374163A (es)
EP (1) EP0075902A3 (es)
JP (1) JPS5867074A (es)
AU (1) AU8745282A (es)
ES (1) ES515992A0 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501777A (en) * 1982-09-22 1985-02-26 The United States Of America As Represented By The Secretary Of The Army Method of sealing of ceramic wall structures
US4609562A (en) * 1984-12-20 1986-09-02 Westinghouse Electric Corp. Apparatus and method for depositing coating onto porous substrate
US4767518A (en) * 1986-06-11 1988-08-30 Westinghouse Electric Corp. Cermet electrode
US5013584A (en) * 1987-11-20 1991-05-07 Hughes Aircraft Company Method of reducing the permeability of plastic optical articles
DE3902452A1 (de) * 1989-01-27 1990-08-02 Heliotronic Gmbh Mit einer strukturierten oberflaeche versehene substrate fuer das aufwachsen von erstarrenden schichten aus schmelzen, insbesondere von halbleitermaterial
US6010750A (en) 1997-05-08 2000-01-04 Georgia Tech Research Corporation Method and apparatus for lithiating alloys
US6706448B1 (en) 1999-08-30 2004-03-16 Georgia Tech Research Corp. Method and apparatus for lithiating alloys
US6350623B1 (en) * 1999-10-29 2002-02-26 California Institute Of Technology Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same
US6726955B1 (en) * 2000-06-27 2004-04-27 Applied Materials, Inc. Method of controlling the crystal structure of polycrystalline silicon
CN101680091A (zh) * 2007-06-15 2010-03-24 纳克公司 反应性气流沉积和无机箔的合成
US20110113855A1 (en) * 2009-11-13 2011-05-19 Michael Edward Badding Analyte Gas Sensors
US8512809B2 (en) * 2010-03-31 2013-08-20 General Electric Company Method of processing multilayer film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286877A (es) * 1961-12-26
US3211572A (en) * 1963-03-27 1965-10-12 Cons Astronautics Inc Coating metal surfaces with refractory metals
US3516850A (en) * 1966-09-16 1970-06-23 Texas Instruments Inc Process for metal coating a hydrogen permeable material
GB1495561A (en) * 1974-04-01 1977-12-21 Central Electr Generat Board Blocking of micropores in a structure
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique

Also Published As

Publication number Publication date
JPS5867074A (ja) 1983-04-21
EP0075902A3 (en) 1984-07-25
US4374163A (en) 1983-02-15
EP0075902A2 (en) 1983-04-06
ES515992A0 (es) 1983-12-16
AU8745282A (en) 1983-04-14

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