ES8501169A1 - Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas - Google Patents
Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicasInfo
- Publication number
- ES8501169A1 ES8501169A1 ES530223A ES530223A ES8501169A1 ES 8501169 A1 ES8501169 A1 ES 8501169A1 ES 530223 A ES530223 A ES 530223A ES 530223 A ES530223 A ES 530223A ES 8501169 A1 ES8501169 A1 ES 8501169A1
- Authority
- ES
- Spain
- Prior art keywords
- semi
- solar cells
- photovoltaic solar
- layer
- conductive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
Landscapes
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PROCEDIMIENTO PARA LA FABRICACION DE UN ELEMENTO SEMI-CONDUCTOR, EN PARTICULAR CELULAS SOLARES FOTOVOLTAICAS, QUE COMPRENDE UNA SUPERFICIE ANTERIOR FOTOSENSIBLE Y UNA SUPERFICIE POSTERIOR DISPUESTA PARA REALIZAR UN CONTACTO OHMICO.COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE REALIZA UNA UNION SOBRE LA SUPERFICIE ANTERIOR DE LA PLACA DE SUSTRATO SEMI-CONDUCTOR MEDIANTE DIFUSION EN ESTA DE UNA MATERIA DE DOPADO; SEGUNDA, SE RECUBRE LA SUPERFICIE ANTERIOR DOPADA CON UNA CAPA DE MATERIA ANTI-REFLECTANTE; TERCERA, SE RECUBRE MEDIANTE SERIGRAFIA LA CAPA DE MATERIA ANTI-REFLECTANTE CON UNA CAPA A BASE DE PLATA; CUARTA, SE SOMETE LA PASTA A BASE DE PLATA A UN TRATAMIENTO TERMICO; Y POR ULTIMO, SE SOMETE LA SUPERFICIE POSTERIOR DE LA PLACA A UN TRATAMIENTO ANALOGO AL MENCIONADO.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU83831A LU83831A1 (fr) | 1981-12-10 | 1981-12-10 | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8501169A1 true ES8501169A1 (es) | 1984-11-01 |
| ES530223A0 ES530223A0 (es) | 1984-11-01 |
Family
ID=19729782
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES518107A Expired ES8405557A1 (es) | 1981-12-10 | 1982-12-10 | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. |
| ES530223A Granted ES530223A0 (es) | 1981-12-10 | 1984-03-01 | Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES518107A Expired ES8405557A1 (es) | 1981-12-10 | 1982-12-10 | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0108065B1 (es) |
| JP (1) | JPS58502078A (es) |
| DE (1) | DE3274927D1 (es) |
| ES (2) | ES8405557A1 (es) |
| GR (1) | GR79601B (es) |
| IT (1) | IT1191122B (es) |
| LU (1) | LU83831A1 (es) |
| PT (1) | PT75974B (es) |
| WO (1) | WO1983002200A1 (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151386A (en) * | 1990-08-01 | 1992-09-29 | Mobil Solar Energy Corporation | Method of applying metallized contacts to a solar cell |
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| WO2003047005A2 (en) * | 2001-11-26 | 2003-06-05 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
| JP3926822B2 (ja) * | 2005-02-03 | 2007-06-06 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN103077978B (zh) * | 2007-02-16 | 2016-12-28 | 纳克公司 | 太阳能电池结构、光生伏打模块及对应的工艺 |
| TWI449183B (zh) | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| JP4978759B1 (ja) * | 2010-11-17 | 2012-07-18 | 日立化成工業株式会社 | 太陽電池の製造方法 |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412164A1 (fr) * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede |
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
-
1981
- 1981-12-10 LU LU83831A patent/LU83831A1/fr unknown
-
1982
- 1982-12-09 DE DE8383900009T patent/DE3274927D1/de not_active Expired
- 1982-12-09 GR GR70029A patent/GR79601B/el unknown
- 1982-12-09 JP JP83500001A patent/JPS58502078A/ja active Pending
- 1982-12-09 EP EP83900009A patent/EP0108065B1/en not_active Expired
- 1982-12-09 WO PCT/BE1982/000024 patent/WO1983002200A1/en not_active Ceased
- 1982-12-10 ES ES518107A patent/ES8405557A1/es not_active Expired
- 1982-12-10 PT PT75974A patent/PT75974B/pt not_active IP Right Cessation
- 1982-12-10 IT IT24680/82A patent/IT1191122B/it active
-
1984
- 1984-03-01 ES ES530223A patent/ES530223A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58502078A (ja) | 1983-12-01 |
| EP0108065B1 (en) | 1986-12-30 |
| EP0108065A1 (en) | 1984-05-16 |
| DE3274927D1 (en) | 1987-02-05 |
| PT75974B (fr) | 1985-11-18 |
| IT8224680A1 (it) | 1984-06-10 |
| IT1191122B (it) | 1988-02-24 |
| WO1983002200A1 (en) | 1983-06-23 |
| LU83831A1 (fr) | 1983-09-01 |
| IT8224680A0 (it) | 1982-12-10 |
| PT75974A (fr) | 1983-01-01 |
| GR79601B (es) | 1984-10-31 |
| ES518107A0 (es) | 1984-06-01 |
| ES8405557A1 (es) | 1984-06-01 |
| ES530223A0 (es) | 1984-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970303 |