JPS644083A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS644083A JPS644083A JP62159251A JP15925187A JPS644083A JP S644083 A JPS644083 A JP S644083A JP 62159251 A JP62159251 A JP 62159251A JP 15925187 A JP15925187 A JP 15925187A JP S644083 A JPS644083 A JP S644083A
- Authority
- JP
- Japan
- Prior art keywords
- power generation
- generation layer
- light
- absorption coefficient
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To suppress light-deterioration rate, by providing a region where a light-absorption coefficient of a part of a power generation layer is equal to or more than a specific value. CONSTITUTION:This device is composed of the following parts: a transmissive and insulating substrate 1, a transparent electrode 2, a P type layer 3 made of hydrogenated amorphous silicon carbide, a power generation layer 4 made of hydrogenated amorphous silicon, an N type layer 5, and a metallic electrode 6. A light-absorption coefficient of the power generation layer 4 is made to be 5X10<4>cm<-1> or more at a wavelength of 700nm. Accordingly a film thickness of the power generation layer can be made about 3000Angstrom or less. Though the power generation layer is small in its film thickness, the light-absorption coefficient can be obtained to be sufficiently large.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159251A JPS644083A (en) | 1987-06-25 | 1987-06-25 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159251A JPS644083A (en) | 1987-06-25 | 1987-06-25 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644083A true JPS644083A (en) | 1989-01-09 |
Family
ID=15689663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62159251A Pending JPS644083A (en) | 1987-06-25 | 1987-06-25 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644083A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322571A (en) * | 1989-06-20 | 1991-01-30 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP2003045514A (en) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Works Ltd | F-type connector core wire connecting structure |
| CN100386467C (en) * | 2000-12-12 | 2008-05-07 | 东京毅力科创株式会社 | Method for regenerating plasma processing container, internal component of plasma processing container, method for manufacturing internal component of plasma processing container, and plasma processing apparatus |
| JP2008171801A (en) * | 2006-12-11 | 2008-07-24 | Yokowo Co Ltd | Relay connector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1987
- 1987-06-25 JP JP62159251A patent/JPS644083A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322571A (en) * | 1989-06-20 | 1991-01-30 | Sanyo Electric Co Ltd | Photovoltaic device |
| CN100386467C (en) * | 2000-12-12 | 2008-05-07 | 东京毅力科创株式会社 | Method for regenerating plasma processing container, internal component of plasma processing container, method for manufacturing internal component of plasma processing container, and plasma processing apparatus |
| JP2003045514A (en) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Works Ltd | F-type connector core wire connecting structure |
| JP2008171801A (en) * | 2006-12-11 | 2008-07-24 | Yokowo Co Ltd | Relay connector |
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