ES8505144A1 - Un dispositivo semiconductor sensible a la radiacion - Google Patents

Un dispositivo semiconductor sensible a la radiacion

Info

Publication number
ES8505144A1
ES8505144A1 ES534204A ES534204A ES8505144A1 ES 8505144 A1 ES8505144 A1 ES 8505144A1 ES 534204 A ES534204 A ES 534204A ES 534204 A ES534204 A ES 534204A ES 8505144 A1 ES8505144 A1 ES 8505144A1
Authority
ES
Spain
Prior art keywords
radiation
semiconductor device
sensitive semiconductor
reduced capacitance
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES534204A
Other languages
English (en)
Other versions
ES534204A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8505144A1 publication Critical patent/ES8505144A1/es
Publication of ES534204A0 publication Critical patent/ES534204A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Curing Cements, Concrete, And Artificial Stone (AREA)

Abstract

DISPOSITIVO SEMICONDUCTOR, SENSIBLE A LA RADIACION.COMPRENDE UN CUERPO SEMICONDUCTOR (2) QUE TIENE AL MENOS UN DIODO SENSIBLE A LA RADIACION, CON AL MENOS UNA UNION PN ENTRE UNA PRIMERA REGION SEMICONDUCTORA DE UN PRIMER TIPO DE CONDUCTIVIDAD OPUESTO AL PRIMER TIPO DE CONDUCTIVIDAD, Y QUE TIENE UN ESPESOR Y UNA CONCENTRACION DE IMPUREZAS TALES QUE, EN LA CONDICION DE FUNCIONAMIENTO, DICHA ZONA SEMICONDUCTORA EN FORMA DE CAPA ESTA AGOTADA SUSTANCIALMENTE EN TODO SU ESPESOR, Y SOBRE SU AREA DE SUPERFICIE COMPLETA.
ES534204A 1983-07-14 1984-07-11 Un dispositivo semiconductor sensible a la radiacion Granted ES534204A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE8302516,A NL187416C (nl) 1983-07-14 1983-07-14 Stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
ES8505144A1 true ES8505144A1 (es) 1985-04-16
ES534204A0 ES534204A0 (es) 1985-04-16

Family

ID=19842158

Family Applications (1)

Application Number Title Priority Date Filing Date
ES534204A Granted ES534204A0 (es) 1983-07-14 1984-07-11 Un dispositivo semiconductor sensible a la radiacion

Country Status (12)

Country Link
US (1) US4652899A (es)
JP (2) JPS6057677A (es)
AT (1) AT392704B (es)
AU (1) AU3057484A (es)
CA (1) CA1243103A (es)
DE (1) DE3425309C2 (es)
ES (1) ES534204A0 (es)
FR (1) FR2549295B1 (es)
GB (1) GB2143373B (es)
IT (1) IT1176383B (es)
NL (1) NL187416C (es)
SE (2) SE8403661L (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628562A1 (fr) * 1988-03-11 1989-09-15 Thomson Csf Dispositif d'imagerie a structure matricielle
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP2711038B2 (ja) * 1991-11-20 1998-02-10 富士通株式会社 光検知装置
EP2287917B1 (en) * 1999-02-25 2016-05-25 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
US7714292B2 (en) 2006-02-01 2010-05-11 Koninklijke Philips Electronics N.V. Geiger mode avalanche photodiode
US8829453B2 (en) * 2009-06-05 2014-09-09 Rti Electronics Ab X-ray detection device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3501678A (en) * 1967-06-28 1970-03-17 Ortec Tapered-shelf semiconductor
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
DE2927126A1 (de) * 1979-07-05 1981-01-08 Standard Elektrik Lorenz Ag Photodiode
US4394676A (en) * 1980-12-17 1983-07-19 Agouridis Dimitrios C Photovoltaic radiation detector element

Also Published As

Publication number Publication date
JPS6126539A (ja) 1986-02-05
NL187416C (nl) 1991-09-16
JPS6057677A (ja) 1985-04-03
JPH0527997B2 (es) 1993-04-22
FR2549295A1 (fr) 1985-01-18
GB8417670D0 (en) 1984-08-15
DE3425309C2 (de) 1994-02-10
GB2143373B (en) 1986-11-12
IT8421834A0 (it) 1984-07-11
NL187416B (nl) 1991-04-16
DE3425309A1 (de) 1985-01-24
NL8302516A (nl) 1985-02-01
AT392704B (de) 1991-05-27
GB2143373A (en) 1985-02-06
SE8403661L (sv) 1985-01-15
IT1176383B (it) 1987-08-18
US4652899A (en) 1987-03-24
FR2549295B1 (fr) 1987-07-31
SE460002B (sv) 1989-08-28
CA1243103A (en) 1988-10-11
IT8421834A1 (it) 1986-01-11
ATA225484A (de) 1990-10-15
AU3057484A (en) 1985-01-17
ES534204A0 (es) 1985-04-16
SE8403661D0 (sv) 1984-07-11

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20000201