FI112644B - Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi - Google Patents
Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi Download PDFInfo
- Publication number
- FI112644B FI112644B FI20002472A FI20002472A FI112644B FI 112644 B FI112644 B FI 112644B FI 20002472 A FI20002472 A FI 20002472A FI 20002472 A FI20002472 A FI 20002472A FI 112644 B FI112644 B FI 112644B
- Authority
- FI
- Finland
- Prior art keywords
- silicon film
- sensor
- polycrystalline silicon
- sensor structure
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000008719 thickening Effects 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims 2
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20002472A FI112644B (fi) | 2000-11-10 | 2000-11-10 | Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi |
| RU2003113320/28A RU2258914C2 (ru) | 2000-11-10 | 2001-11-07 | Датчик абсолютного давления с микрообработанной поверхностью и способ его изготовления |
| US10/416,267 US6931935B2 (en) | 2000-11-10 | 2001-11-07 | Surface-micromachined absolute pressure sensor and a method for manufacturing thereof |
| JP2002541035A JP3857231B2 (ja) | 2000-11-10 | 2001-11-07 | 表面微細加工した絶対圧力センサとその製造方法 |
| PCT/FI2001/000970 WO2002038491A1 (en) | 2000-11-10 | 2001-11-07 | Surface-micromachined absolute pressure sensor and a method for manufacturing thereof |
| AT01982512T ATE514652T1 (de) | 2000-11-10 | 2001-11-07 | Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren |
| CN01821908.XA CN1225400C (zh) | 2000-11-10 | 2001-11-07 | 表面微型机械加工的绝对压力传感器及其制造方法 |
| EP01982512A EP1337458B1 (de) | 2000-11-10 | 2001-11-07 | Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren |
| AU2002214074A AU2002214074A1 (en) | 2000-11-10 | 2001-11-07 | Surface-micromachined absolute pressure sensor and a method for manufacturing thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20002472 | 2000-11-10 | ||
| FI20002472A FI112644B (fi) | 2000-11-10 | 2000-11-10 | Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20002472A0 FI20002472A0 (fi) | 2000-11-10 |
| FI20002472L FI20002472L (fi) | 2002-05-11 |
| FI112644B true FI112644B (fi) | 2003-12-31 |
Family
ID=8559475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20002472A FI112644B (fi) | 2000-11-10 | 2000-11-10 | Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6931935B2 (de) |
| EP (1) | EP1337458B1 (de) |
| JP (1) | JP3857231B2 (de) |
| CN (1) | CN1225400C (de) |
| AT (1) | ATE514652T1 (de) |
| AU (1) | AU2002214074A1 (de) |
| FI (1) | FI112644B (de) |
| RU (1) | RU2258914C2 (de) |
| WO (1) | WO2002038491A1 (de) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10117486A1 (de) | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Verfahren zur Herstelung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
| US6794119B2 (en) | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
| DE10247487A1 (de) | 2002-10-11 | 2004-05-06 | Infineon Technologies Ag | Membran und Verfahren zu deren Herstellung |
| DE102004015442A1 (de) * | 2004-03-30 | 2005-10-20 | Bosch Gmbh Robert | Verfahren zum Verschließen von perforierten Membranen |
| US6923069B1 (en) | 2004-10-18 | 2005-08-02 | Honeywell International Inc. | Top side reference cavity for absolute pressure sensor |
| DE102005016243B3 (de) | 2005-04-08 | 2006-09-28 | Austriamicrosystems Ag | Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung |
| US7560789B2 (en) | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2495212A3 (de) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür |
| CA2616268A1 (en) | 2005-07-22 | 2007-02-01 | Qualcomm Incorporated | Mems devices having support structures and methods of fabricating the same |
| WO2007029133A2 (en) * | 2005-09-09 | 2007-03-15 | Koninklijke Philips Electronics N. V. | A method of manufacturing a microsystem, such a microsystem, a stack of foils comprising such a microsystem, an electronic device comprising such a microsystem and use of the electronic device |
| US20080280112A1 (en) * | 2005-09-09 | 2008-11-13 | Koninklijke Philips Electronics, N.V. | Method fo Manufacturing a Microsystem, Such a Microsystem, a Stack of Foils Comprising Such a Microsystem, an Electronic Device Comprising Such a Microsystem and Use of the Electronic Device |
| US7630114B2 (en) | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| US7417784B2 (en) | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
| US7623287B2 (en) | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
| US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
| RU2324159C1 (ru) * | 2006-08-09 | 2008-05-10 | Федеральное государственное учреждение Российский научный центр "Курчатовский институт" | Чувствительный элемент емкостного датчика давления жидких и газообразных сред и способ его изготовления |
| US7545552B2 (en) | 2006-10-19 | 2009-06-09 | Qualcomm Mems Technologies, Inc. | Sacrificial spacer process and resultant structure for MEMS support structure |
| KR20090125087A (ko) * | 2007-02-20 | 2009-12-03 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 마이크로전자기계 시스템〔ｍｅｍｓ〕의 에칭장치 및 에칭 방법 |
| US7625825B2 (en) | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
| KR20100061731A (ko) * | 2007-09-14 | 2010-06-08 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Ｍｅｍｓ 제조에 이용되는 에칭 방법 |
| US8022490B2 (en) | 2008-03-24 | 2011-09-20 | Conexant Systems, Inc. | Micro electro-mechanical sensor (MEMS) fabricated with ribbon wire bonds |
| DE102008028300B4 (de) * | 2008-06-13 | 2021-10-07 | Tdk Electronics Ag | Leiterplatte mit flexiblem Bereich und Verfahren zur Herstellung |
| RU2465681C2 (ru) * | 2009-02-19 | 2012-10-27 | Государственное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ изготовления чувствительного элемента датчика давления жидких и газообразных сред |
| US8393222B2 (en) | 2010-02-27 | 2013-03-12 | Codman Neuro Sciences Sárl | Apparatus and method for minimizing drift of a piezo-resistive pressure sensor due to progressive release of mechanical stress over time |
| KR101184459B1 (ko) | 2010-05-06 | 2012-09-19 | 삼성전기주식회사 | 압력센서 |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| RU2477846C1 (ru) * | 2011-12-02 | 2013-03-20 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") | Датчик абсолютного давления |
| CN102539029B (zh) * | 2012-02-29 | 2013-09-25 | 上海交通大学 | 基于柔性mems技术的三维流体应力传感器及其阵列 |
| FR3002219B1 (fr) * | 2013-02-19 | 2015-04-10 | Commissariat Energie Atomique | Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse |
| DE102017213354A1 (de) | 2017-08-02 | 2019-02-07 | Robert Bosch Gmbh | Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren |
| CN209326840U (zh) | 2018-12-27 | 2019-08-30 | 热敏碟公司 | 压力传感器及压力变送器 |
| JP7485045B2 (ja) * | 2020-07-21 | 2024-05-16 | 株式会社村田製作所 | 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法 |
| TR202017548A2 (tr) * | 2020-11-03 | 2022-05-23 | Koc Ueniversitesi | Bi̇r kafa i̇çi̇ basinç sensörü |
| CN115752814B (zh) * | 2021-08-30 | 2026-02-17 | 意法半导体股份有限公司 | 用于制造电容式压力传感器的方法和电容式压力传感器 |
| IT202100022505A1 (it) | 2021-08-30 | 2023-03-02 | St Microelectronics Srl | Procedimento di fabbricazione di un sensore di pressione capacitivo e sensore di pressione capacitivo |
| US12140489B2 (en) * | 2021-09-21 | 2024-11-12 | Invensense, Inc. | Pressure sensor with high stability |
| US12139398B2 (en) * | 2021-09-21 | 2024-11-12 | Invensense, Inc. | Pressure sensor with high stability |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5506454A (en) * | 1991-03-20 | 1996-04-09 | Hitachi, Ltd. | System and method for diagnosing characteristics of acceleration sensor |
| US5707077A (en) * | 1991-11-18 | 1998-01-13 | Hitachi, Ltd. | Airbag system using three-dimensional acceleration sensor |
| IL106790A (en) * | 1992-09-01 | 1996-08-04 | Rosemount Inc | A capacitive pressure sensation consisting of the bracket and the process of creating it |
| US5802684A (en) * | 1993-09-14 | 1998-09-08 | Nikon Corporation | Process for producing a vibration angular-velocity sensor |
| DE59508560D1 (de) * | 1994-11-24 | 2000-08-17 | Siemens Ag | Kapazitiver Drucksensor |
| FI100918B (fi) | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
| JPH08236784A (ja) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | 加速度センサ及びその製造方法 |
| US5831162A (en) * | 1997-01-21 | 1998-11-03 | Delco Electronics Corporation | Silicon micromachined motion sensor and method of making |
| RU2147119C1 (ru) * | 1998-03-13 | 2000-03-27 | ТОО Научно-производственная компания "Вектор" | Датчик давления |
| JP3362714B2 (ja) * | 1998-11-16 | 2003-01-07 | 株式会社豊田中央研究所 | 静電容量型圧力センサおよびその製造方法 |
| US6816301B1 (en) * | 1999-06-29 | 2004-11-09 | Regents Of The University Of Minnesota | Micro-electromechanical devices and methods of manufacture |
| DE10032579B4 (de) * | 2000-07-05 | 2020-07-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
-
2000
- 2000-11-10 FI FI20002472A patent/FI112644B/fi not_active IP Right Cessation
-
2001
- 2001-11-07 US US10/416,267 patent/US6931935B2/en not_active Expired - Lifetime
- 2001-11-07 RU RU2003113320/28A patent/RU2258914C2/ru active
- 2001-11-07 JP JP2002541035A patent/JP3857231B2/ja not_active Expired - Lifetime
- 2001-11-07 AU AU2002214074A patent/AU2002214074A1/en not_active Abandoned
- 2001-11-07 AT AT01982512T patent/ATE514652T1/de not_active IP Right Cessation
- 2001-11-07 WO PCT/FI2001/000970 patent/WO2002038491A1/en not_active Ceased
- 2001-11-07 EP EP01982512A patent/EP1337458B1/de not_active Expired - Lifetime
- 2001-11-07 CN CN01821908.XA patent/CN1225400C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002038491A1 (en) | 2002-05-16 |
| EP1337458B1 (de) | 2011-06-29 |
| FI20002472A0 (fi) | 2000-11-10 |
| ATE514652T1 (de) | 2011-07-15 |
| RU2258914C2 (ru) | 2005-08-20 |
| US6931935B2 (en) | 2005-08-23 |
| US20040020303A1 (en) | 2004-02-05 |
| AU2002214074A1 (en) | 2002-05-21 |
| JP3857231B2 (ja) | 2006-12-13 |
| FI20002472L (fi) | 2002-05-11 |
| EP1337458A1 (de) | 2003-08-27 |
| CN1486277A (zh) | 2004-03-31 |
| CN1225400C (zh) | 2005-11-02 |
| JP2004513356A (ja) | 2004-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Transfer of assignment of patent |
Owner name: VALTION TEKNILLINEN TUTKIMUSKESKUS Free format text: VALTION TEKNILLINEN TUTKIMUSKESKUS |
|
| MA | Patent expired |