ATE514652T1 - Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren - Google Patents

Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren

Info

Publication number
ATE514652T1
ATE514652T1 AT01982512T AT01982512T ATE514652T1 AT E514652 T1 ATE514652 T1 AT E514652T1 AT 01982512 T AT01982512 T AT 01982512T AT 01982512 T AT01982512 T AT 01982512T AT E514652 T1 ATE514652 T1 AT E514652T1
Authority
AT
Austria
Prior art keywords
absolute pressure
pressure sensor
manufactured
production
surface micro
Prior art date
Application number
AT01982512T
Other languages
English (en)
Inventor
Martti Blomberg
Original Assignee
Valtion Teknillinen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valtion Teknillinen filed Critical Valtion Teknillinen
Application granted granted Critical
Publication of ATE514652T1 publication Critical patent/ATE514652T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
AT01982512T 2000-11-10 2001-11-07 Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren ATE514652T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20002472A FI112644B (fi) 2000-11-10 2000-11-10 Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi
PCT/FI2001/000970 WO2002038491A1 (en) 2000-11-10 2001-11-07 Surface-micromachined absolute pressure sensor and a method for manufacturing thereof

Publications (1)

Publication Number Publication Date
ATE514652T1 true ATE514652T1 (de) 2011-07-15

Family

ID=8559475

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01982512T ATE514652T1 (de) 2000-11-10 2001-11-07 Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren

Country Status (9)

Country Link
US (1) US6931935B2 (de)
EP (1) EP1337458B1 (de)
JP (1) JP3857231B2 (de)
CN (1) CN1225400C (de)
AT (1) ATE514652T1 (de)
AU (1) AU2002214074A1 (de)
FI (1) FI112644B (de)
RU (1) RU2258914C2 (de)
WO (1) WO2002038491A1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10117486A1 (de) 2001-04-07 2002-10-17 Bosch Gmbh Robert Verfahren zur Herstelung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
US6794119B2 (en) 2002-02-12 2004-09-21 Iridigm Display Corporation Method for fabricating a structure for a microelectromechanical systems (MEMS) device
DE10247487A1 (de) 2002-10-11 2004-05-06 Infineon Technologies Ag Membran und Verfahren zu deren Herstellung
DE102004015442A1 (de) * 2004-03-30 2005-10-20 Bosch Gmbh Robert Verfahren zum Verschließen von perforierten Membranen
US6923069B1 (en) 2004-10-18 2005-08-02 Honeywell International Inc. Top side reference cavity for absolute pressure sensor
DE102005016243B3 (de) * 2005-04-08 2006-09-28 Austriamicrosystems Ag Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
BRPI0612997A2 (pt) 2005-07-22 2010-12-14 Qualcomm Inc dispositivos mems e respectivos mÉtodos de fabrico
EP2495212A3 (de) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
KR20080044263A (ko) * 2005-09-09 2008-05-20 코닌클리케 필립스 일렉트로닉스 엔.브이. 마이크로시스템 제작 방법, 그러한 마이크로시스템, 그러한마이크로시스템을 포함하는 포일의 스택, 그러한마이크로시스템을 포함하는 전자 디바이스, 및 그러한 전자디바이스의 사용
KR20080045168A (ko) * 2005-09-09 2008-05-22 코닌클리케 필립스 일렉트로닉스 엔.브이. 마이크로시스템을 제조하는 방법, 그 마이크로시스템, 그마이크로시스템을 포함하는 호일 적층, 그마이크로시스템을 포함하는 전자 디바이스 및 그 전자디바이스의 사용
US7630114B2 (en) 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
RU2324159C1 (ru) * 2006-08-09 2008-05-10 Федеральное государственное учреждение Российский научный центр "Курчатовский институт" Чувствительный элемент емкостного датчика давления жидких и газообразных сред и способ его изготовления
US7545552B2 (en) 2006-10-19 2009-06-09 Qualcomm Mems Technologies, Inc. Sacrificial spacer process and resultant structure for MEMS support structure
WO2008103632A2 (en) * 2007-02-20 2008-08-28 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of mems
US7625825B2 (en) 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
US8022490B2 (en) * 2008-03-24 2011-09-20 Conexant Systems, Inc. Micro electro-mechanical sensor (MEMS) fabricated with ribbon wire bonds
DE102008028300B4 (de) * 2008-06-13 2021-10-07 Tdk Electronics Ag Leiterplatte mit flexiblem Bereich und Verfahren zur Herstellung
RU2465681C2 (ru) * 2009-02-19 2012-10-27 Государственное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Способ изготовления чувствительного элемента датчика давления жидких и газообразных сред
US8393222B2 (en) 2010-02-27 2013-03-12 Codman Neuro Sciences Sárl Apparatus and method for minimizing drift of a piezo-resistive pressure sensor due to progressive release of mechanical stress over time
KR101184459B1 (ko) 2010-05-06 2012-09-19 삼성전기주식회사 압력센서
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
RU2477846C1 (ru) * 2011-12-02 2013-03-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Датчик абсолютного давления
CN102539029B (zh) * 2012-02-29 2013-09-25 上海交通大学 基于柔性mems技术的三维流体应力传感器及其阵列
FR3002219B1 (fr) * 2013-02-19 2015-04-10 Commissariat Energie Atomique Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse
DE102017213354A1 (de) * 2017-08-02 2019-02-07 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
JP7485045B2 (ja) * 2020-07-21 2024-05-16 株式会社村田製作所 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法
TR202017548A2 (tr) * 2020-11-03 2022-05-23 Koc Ueniversitesi Bi̇r kafa i̇çi̇ basinç sensörü
CN218545957U (zh) * 2021-08-30 2023-02-28 意法半导体股份有限公司 电容式压力传感器
IT202100022505A1 (it) 2021-08-30 2023-03-02 St Microelectronics Srl Procedimento di fabbricazione di un sensore di pressione capacitivo e sensore di pressione capacitivo
US12140489B2 (en) * 2021-09-21 2024-11-12 Invensense, Inc. Pressure sensor with high stability
US12139398B2 (en) * 2021-09-21 2024-11-12 Invensense, Inc. Pressure sensor with high stability

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5506454A (en) * 1991-03-20 1996-04-09 Hitachi, Ltd. System and method for diagnosing characteristics of acceleration sensor
US5707077A (en) * 1991-11-18 1998-01-13 Hitachi, Ltd. Airbag system using three-dimensional acceleration sensor
IL106790A (en) * 1992-09-01 1996-08-04 Rosemount Inc A capacitive pressure sensation consisting of the bracket and the process of creating it
US5802684A (en) * 1993-09-14 1998-09-08 Nikon Corporation Process for producing a vibration angular-velocity sensor
DE59508560D1 (de) * 1994-11-24 2000-08-17 Siemens Ag Kapazitiver Drucksensor
FI100918B (fi) * 1995-02-17 1998-03-13 Vaisala Oy Pintamikromekaaninen, symmetrinen paine-eroanturi
JPH08236784A (ja) * 1995-02-23 1996-09-13 Tokai Rika Co Ltd 加速度センサ及びその製造方法
US5831162A (en) * 1997-01-21 1998-11-03 Delco Electronics Corporation Silicon micromachined motion sensor and method of making
RU2147119C1 (ru) * 1998-03-13 2000-03-27 ТОО Научно-производственная компания "Вектор" Датчик давления
JP3362714B2 (ja) * 1998-11-16 2003-01-07 株式会社豊田中央研究所 静電容量型圧力センサおよびその製造方法
US6816301B1 (en) * 1999-06-29 2004-11-09 Regents Of The University Of Minnesota Micro-electromechanical devices and methods of manufacture
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement

Also Published As

Publication number Publication date
FI112644B (fi) 2003-12-31
WO2002038491A1 (en) 2002-05-16
CN1486277A (zh) 2004-03-31
RU2258914C2 (ru) 2005-08-20
US6931935B2 (en) 2005-08-23
JP3857231B2 (ja) 2006-12-13
FI20002472L (fi) 2002-05-11
CN1225400C (zh) 2005-11-02
FI20002472A0 (fi) 2000-11-10
EP1337458B1 (de) 2011-06-29
JP2004513356A (ja) 2004-04-30
US20040020303A1 (en) 2004-02-05
AU2002214074A1 (en) 2002-05-21
EP1337458A1 (de) 2003-08-27

Similar Documents

Publication Publication Date Title
ATE514652T1 (de) Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren
ATE341101T1 (de) Phasenwechselspeicher und dessen herstellungsverfahren
DE60031089D1 (de) Kapazitiver Drucksensor und zugehöriges Herstellungsverfahren
EP1115153A3 (de) Halbleitersubstrat und Prozess zur Herstellung
GB2276978B (en) Absolute pressure sensor
ATE351930T1 (de) Werkzeug aus zementiertem karbid und verfahren seiner herstellung
AU2003266700A1 (en) Porous article and method for production thereof and electrochemical element using the porous article
AU5215099A (en) Method of fabricating silicon capacitive sensor
WO2007047571A3 (en) Integrated cmos-mems technology for wired implantable sensors
DE60035341D1 (de) Polierkörper, poliermaschine, poliermaschinenjustierverfahren, dicken- oder endpunkt-messverfahren für die polierte schicht, herstellungsverfahren eines halbleiterbauelementes
DE60015451D1 (de) Drucksensor und Herstellungsverfahren desselben
DE50207120D1 (de) Halbleiterbauelement als kapazitiver feuchtesensor, sowie ein verfahren zur herstellung des halbleiterbauelements
PL377069A1 (pl) Porowata kształtka z węglika krzemu, proces jej wytwarzania oraz struktura komórkowa podobna do plastra pszczelego
DE60036301D1 (de) Gassensor und sein herstellungsverfahren
EP1471360A3 (de) Kapazitive Detektionselektrode und Herstellungsverfahren dafür
EP1412731A1 (de) Mikromechanisches bauelement
DE59606342D1 (de) Verfahren zum Herstellen von kapazitiven, in Nullpunkt-Langzeit-Fehlerklassen sortierten Keramik-Absolutdruck-Sensoren
ATE499696T1 (de) Master-form zur duplikation einer feinstruktur und herstellungsverfahren dafür
WO2004099063A3 (de) Strahlungssensor, wafer, sensormodul und verfahren zur herstellung eines strahlungssensors
ATE249871T1 (de) Keramische flachmembran und verfahren zu ihrer herstellung
FR2818969B1 (fr) Materiau ceramique dielectrique et son procede de fabrication
WO2002051742A3 (de) Mikromechanisches bauelement und entsprechendes herstellungsverfahren
WO2011078595A3 (ko) 플렉서블 기판을 이용한 압력센서 및 이를 이용한 5.1 채널 마이크로폰 제조방법
ATE349558T1 (de) Elektrodenanordnung, herstellungsverfahren dafür und verwendung davon
ATE375837T1 (de) Verfahren und vorrichtung zum sintern von silver clay

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties