FI20021255L - Suoraan konversioon perustuva kuvaava röntgendetektori - Google Patents

Suoraan konversioon perustuva kuvaava röntgendetektori Download PDF

Info

Publication number
FI20021255L
FI20021255L FI20021255A FI20021255A FI20021255L FI 20021255 L FI20021255 L FI 20021255L FI 20021255 A FI20021255 A FI 20021255A FI 20021255 A FI20021255 A FI 20021255A FI 20021255 L FI20021255 L FI 20021255L
Authority
FI
Finland
Prior art keywords
ray detector
direct conversion
conversion imaging
imaging
direct
Prior art date
Application number
FI20021255A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI20021255A0 (fi
FI20021255A7 (fi
Inventor
Heikki Sipilae
Jacques Bourgoin
Original Assignee
Metorex Internat Oy
Jacques Bourgoin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metorex Internat Oy, Jacques Bourgoin filed Critical Metorex Internat Oy
Priority to FI20021255A priority Critical patent/FI20021255L/fi
Publication of FI20021255A0 publication Critical patent/FI20021255A0/fi
Priority to US10/458,910 priority patent/US6933503B2/en
Priority to EP03396063A priority patent/EP1376105A3/fr
Priority to JP2003182064A priority patent/JP2004080010A/ja
Publication of FI20021255A7 publication Critical patent/FI20021255A7/fi
Publication of FI20021255L publication Critical patent/FI20021255L/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FI20021255A 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori FI20021255L (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20021255A FI20021255L (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori
US10/458,910 US6933503B2 (en) 2002-06-27 2003-06-11 Imaging X-ray detector based on direct conversion
EP03396063A EP1376105A3 (fr) 2002-06-27 2003-06-23 Procédé et dispositif d'imagerie à rayons-X
JP2003182064A JP2004080010A (ja) 2002-06-27 2003-06-26 直接変換に基づく画像化ｘ線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20021255A FI20021255L (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori

Publications (3)

Publication Number Publication Date
FI20021255A0 FI20021255A0 (fi) 2002-06-27
FI20021255A7 FI20021255A7 (fi) 2003-12-28
FI20021255L true FI20021255L (fi) 2003-12-28

Family

ID=8564239

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20021255A FI20021255L (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori

Country Status (4)

Country Link
US (1) US6933503B2 (fr)
EP (1) EP1376105A3 (fr)
JP (1) JP2004080010A (fr)
FI (1) FI20021255L (fr)

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JP4153783B2 (ja) * 2002-12-09 2008-09-24 株式会社東芝 Ｘ線平面検出器
US7202511B2 (en) * 2003-08-21 2007-04-10 Drs Sensors & Targeting Systems, Inc. Near-infrared visible light photon counter
US7403594B2 (en) * 2004-03-31 2008-07-22 Canon Kabushiki Kaisha Radiation imaging apparatus and control method therefor
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
US7505554B2 (en) * 2005-07-25 2009-03-17 Digimd Corporation Apparatus and methods of an X-ray and tomosynthesis and dual spectra machine
WO2007123140A1 (fr) * 2006-04-20 2007-11-01 Nec Corporation Dispositif de communication et procédé pour le refroidissement par l'air du dispositif de communication
EP2154540B1 (fr) * 2006-08-01 2014-12-31 Washington University Nanoscopie multifonctionnelle pour l'imagerie de cellules
US20080037703A1 (en) * 2006-08-09 2008-02-14 Digimd Corporation Three dimensional breast imaging
JP2008151768A (ja) * 2006-11-22 2008-07-03 Konica Minolta Medical & Graphic Inc 放射線用シンチレータパネル、放射線用シンチレータパネルの製造方法、及び放射線画像撮影装置
US8237126B2 (en) * 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
GB0802088D0 (en) 2008-02-05 2008-03-12 Panalytical Bv Imaging detector
EP2088451B1 (fr) 2008-02-05 2016-01-06 PANalytical B.V. Détecteur d'imagerie
WO2010011859A2 (fr) * 2008-07-24 2010-01-28 The Regents Of The University Of California Détecteurs de neutrons à semi-conducteur en couches
EP2430475A1 (fr) 2009-05-14 2012-03-21 Devicor Medical Products, Inc. Réseau de cristaux empilés pour la détection d'émissions de photons
JP2013516794A (ja) * 2010-01-08 2013-05-13 ワシントン ユニヴァーシティー 異常光コンダクタンス（ｅｏｃ）効果に基づく高分解能光子検出の方法および装置
US8310021B2 (en) 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
EP2649470B1 (fr) * 2010-12-07 2017-09-27 Koninklijke Philips N.V. Détecteur à rayons x à conversion directe
FR2969918B1 (fr) * 2010-12-29 2013-12-13 Gen Electric Procede et dispositif de mise en oeuvre d'une grille anti-diffusante
DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
RS53452B (sr) * 2011-06-10 2014-12-31 Outotec Oyj Rendgenska cev i uređaj za analiziranje fluorescencije rendgenskih zraka koji koristi selektivnu ekscitaciju radijacije
US20140367578A1 (en) * 2011-06-16 2014-12-18 Forstgarten International Holding Gmbh X-ray image sensor
DE102011083424B3 (de) * 2011-09-26 2013-01-17 Siemens Ag Röntgenstrahlungsdetektor zur Verwendung in einem CT-System
DE102011089776B4 (de) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor, medizinisches Gerät und Verfahren zum Erzeugen eines solchen Detektorelements
RU2593433C1 (ru) * 2015-05-25 2016-08-10 Объединенный Институт Ядерных Исследований Способ и устройство для измерения профиля нейтронного пучка (пучков)
US10114129B2 (en) * 2016-01-28 2018-10-30 The Research Foundation For The State University Of New York Semiconductor detector for x-ray single-photon detection
CN109661595B (zh) 2016-09-23 2023-05-30 深圳帧观德芯科技有限公司 半导体x射线检测器的封装
CN107015263B (zh) * 2017-04-09 2019-11-15 东北大学 一种同基质的“闪烁体-半导体-闪烁体”复合x射线探测器
WO2019144322A1 (fr) * 2018-01-24 2019-08-01 Shenzhen Xpectvision Technology Co., Ltd. Procédés de fabrication d'un détecteur de rayonnement
EP3908831A4 (fr) 2019-01-10 2022-11-23 Shenzhen Xpectvision Technology Co., Ltd. Détecteurs de rayons x fondés sur une couche épitaxiale et procédés de fabrication
FR3119711B1 (fr) * 2021-02-11 2023-01-13 Commissariat Energie Atomique Photodiode germanium à contacts métalliques optimisés

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US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
DE3279663D1 (en) * 1981-06-17 1989-06-01 Hitachi Ltd Heterojunction semiconductor device
FR2689684B1 (fr) * 1992-04-01 1994-05-13 Commissariat A Energie Atomique Dispositif de micro-imagerie de rayonnements ionisants.
JPH05315366A (ja) * 1992-05-11 1993-11-26 Fujitsu Ltd 半導体装置
US5596200A (en) * 1992-10-14 1997-01-21 Primex Low dose mammography system
DE4344252A1 (de) * 1993-12-23 1995-06-29 Siemens Ag Röntgendetektorelement mit Direktkonversion
GB2318411B (en) * 1996-10-15 1999-03-10 Simage Oy Imaging device for imaging radiation
JPH10290023A (ja) * 1997-04-15 1998-10-27 Nec Corp 半導体光検出器
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
US8039882B2 (en) * 2003-08-22 2011-10-18 Micron Technology, Inc. High gain, low noise photodiode for image sensors and method of formation

Also Published As

Publication number Publication date
EP1376105A3 (fr) 2006-04-05
FI20021255A0 (fi) 2002-06-27
FI20021255A7 (fi) 2003-12-28
US20040007671A1 (en) 2004-01-15
US6933503B2 (en) 2005-08-23
EP1376105A2 (fr) 2004-01-02
JP2004080010A (ja) 2004-03-11

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