FR1135345A - Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur - Google Patents

Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur

Info

Publication number
FR1135345A
FR1135345A FR1135345DA FR1135345A FR 1135345 A FR1135345 A FR 1135345A FR 1135345D A FR1135345D A FR 1135345DA FR 1135345 A FR1135345 A FR 1135345A
Authority
FR
France
Prior art keywords
rectifiers
transistors
semiconductor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1135345A publication Critical patent/FR1135345A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1135345D 1954-07-15 1955-07-07 Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur Expired FR1135345A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0040040 1954-07-15

Publications (1)

Publication Number Publication Date
FR1135345A true FR1135345A (fr) 1957-04-26

Family

ID=7483506

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1135345D Expired FR1135345A (fr) 1954-07-15 1955-07-07 Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur
FR69413D Expired FR69413E (fr) 1954-07-15 1956-02-10 Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR69413D Expired FR69413E (fr) 1954-07-15 1956-02-10 Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur

Country Status (3)

Country Link
CH (2) CH335766A (fr)
DE (1) DE1018558B (fr)
FR (2) FR1135345A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1133470B (de) * 1957-12-27 1962-07-19 Int Standard Electric Corp Verfahren zum Herstellen von pn-UEbergaengen in langen Halbleiter-kristallen, insbesondere in Drahtform, fuer Halbleiterbauelemente durch Eindiffundieren von gasfoermigen dotierenden Fremdstoffen

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282203B (de) * 1957-06-24 1968-11-07 Siemens Ag Verfahren zum Herstellen einer insbesondere auf Strahlung ansprechenden Halbleiterkristall-anordnung mit pn-UEbergang und den pn-UEbergang gegen Feuchtigkeit schuetzender Huelle und danach hergestellte Halbleiteranordnung
DE1164680B (de) * 1958-05-21 1964-03-05 Siemens Ag Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
BE569807A (fr) * 1958-07-26
NL247735A (fr) * 1959-01-28
CA673999A (en) * 1959-10-28 1963-11-12 F. Bennett Wesley Diffusion of semiconductor bodies
DE1186950C2 (de) * 1960-02-15 1975-10-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum entfernen von unerwuenschten metallen aus einem einen pn-uebergang aufweisenden silicium-halbleiterkoerper
DE1141723B (de) * 1960-06-10 1962-12-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem n-leitenden Siliziumkristall, insbesondere eines Flaechentransistors vom pnp-Typ
NL269346A (fr) * 1960-09-20
NL256387A (fr) * 1960-09-29
DE1198937B (de) * 1961-12-27 1965-08-19 Siemens Ag Verfahren zum Herstellen von Halbleiterplatten, deren Oberflaechen parallel zu einer Kristallgitterflaeche liegen
DE1269732C2 (de) * 1962-12-24 1973-12-13 Verfahren zum herstellen von halbleiteranordnungen
NL6705415A (fr) * 1966-04-29 1967-10-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1133470B (de) * 1957-12-27 1962-07-19 Int Standard Electric Corp Verfahren zum Herstellen von pn-UEbergaengen in langen Halbleiter-kristallen, insbesondere in Drahtform, fuer Halbleiterbauelemente durch Eindiffundieren von gasfoermigen dotierenden Fremdstoffen

Also Published As

Publication number Publication date
FR69413E (fr) 1958-11-06
CH335766A (de) 1959-01-31
CH341572A (de) 1959-10-15
DE1018558B (de) 1957-10-31

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