FR1152077A - éléments de circuits à transistors - Google Patents

éléments de circuits à transistors

Info

Publication number
FR1152077A
FR1152077A FR1152077DA FR1152077A FR 1152077 A FR1152077 A FR 1152077A FR 1152077D A FR1152077D A FR 1152077DA FR 1152077 A FR1152077 A FR 1152077A
Authority
FR
France
Prior art keywords
circuit elements
transistor circuit
transistor
elements
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US458619A external-priority patent/US2889499A/en
Priority claimed from US509852A external-priority patent/US2992337A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1152077A publication Critical patent/FR1152077A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/29—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator multistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR1152077D 1954-09-27 1955-09-20 éléments de circuits à transistors Expired FR1152077A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US458619A US2889499A (en) 1954-09-27 1954-09-27 Bistable semiconductor device
US509852A US2992337A (en) 1955-05-20 1955-05-20 Multiple collector transistors and circuits therefor

Publications (1)

Publication Number Publication Date
FR1152077A true FR1152077A (fr) 1958-02-11

Family

ID=27039067

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1152077D Expired FR1152077A (fr) 1954-09-27 1955-09-20 éléments de circuits à transistors
FR1167594D Expired FR1167594A (fr) 1954-09-27 1956-05-18 Transistors à collecteurs multiples et circuits utilisant ces transistors

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1167594D Expired FR1167594A (fr) 1954-09-27 1956-05-18 Transistors à collecteurs multiples et circuits utilisant ces transistors

Country Status (5)

Country Link
BE (1) BE541575A (2)
CH (1) CH339292A (2)
DE (3) DE1035776B (2)
FR (2) FR1152077A (2)
GB (1) GB831535A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112305407A (zh) * 2020-10-21 2021-02-02 上海华力集成电路制造有限公司 定位测试结构失效位置和原因的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
BE548071A (2) * 1955-05-25
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
NL121500C (2) * 1958-09-02
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1156508B (de) * 1959-09-30 1963-10-31 Siemens Ag Steuerbares und schaltendes Vierschichthalbleiterbauelement
NL261720A (2) * 1960-03-04
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
DE1161356B (de) * 1960-06-03 1964-01-16 Rudolf Rost Dr Ing Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (2) * 1948-09-24
BE519804A (2) * 1952-05-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112305407A (zh) * 2020-10-21 2021-02-02 上海华力集成电路制造有限公司 定位测试结构失效位置和原因的方法
CN112305407B (zh) * 2020-10-21 2024-06-11 上海华力集成电路制造有限公司 定位测试结构失效位置和原因的方法

Also Published As

Publication number Publication date
DE1035776B (de) 1958-08-07
DE1055692B (de) 1959-04-23
FR1167594A (fr) 1958-11-26
BE541575A (2)
DE1076175B (de) 1960-02-25
CH339292A (fr) 1959-06-30
GB831535A (en) 1960-03-30

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