FR1245720A - Nouvelles structures pour transistor à effet de champ - Google Patents

Nouvelles structures pour transistor à effet de champ

Info

Publication number
FR1245720A
FR1245720A FR806453A FR806453A FR1245720A FR 1245720 A FR1245720 A FR 1245720A FR 806453 A FR806453 A FR 806453A FR 806453 A FR806453 A FR 806453A FR 1245720 A FR1245720 A FR 1245720A
Authority
FR
France
Prior art keywords
field effect
effect transistor
new structures
structures
new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR806453A
Other languages
English (en)
Inventor
Marc Chappey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR806453A priority Critical patent/FR1245720A/fr
Priority to US58316A priority patent/US3001111A/en
Application granted granted Critical
Publication of FR1245720A publication Critical patent/FR1245720A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR806453A 1959-09-30 1959-09-30 Nouvelles structures pour transistor à effet de champ Expired FR1245720A (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR806453A FR1245720A (fr) 1959-09-30 1959-09-30 Nouvelles structures pour transistor à effet de champ
US58316A US3001111A (en) 1959-09-30 1960-09-26 Structures for a field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR806453A FR1245720A (fr) 1959-09-30 1959-09-30 Nouvelles structures pour transistor à effet de champ

Publications (1)

Publication Number Publication Date
FR1245720A true FR1245720A (fr) 1960-11-10

Family

ID=8719695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR806453A Expired FR1245720A (fr) 1959-09-30 1959-09-30 Nouvelles structures pour transistor à effet de champ

Country Status (2)

Country Link
US (1) US3001111A (fr)
FR (1) FR1245720A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
NL290035A (fr) * 1962-03-12
US3252003A (en) * 1962-09-10 1966-05-17 Westinghouse Electric Corp Unipolar transistor
US3296508A (en) * 1962-12-17 1967-01-03 Rca Corp Field-effect transistor with reduced capacitance between gate and channel
DE1295237B (de) * 1964-10-22 1969-05-14 Siemens Ag Druckempfindliche Halbleiteranordnung und Verfahren zu ihrer Herstellung
US3619737A (en) * 1970-05-08 1971-11-09 Ibm Planar junction-gate field-effect transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
NL182022B (nl) * 1952-10-31 Oval Eng Co Ltd Stroommeter met positieve verplaatsing.
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2697052A (en) * 1953-07-24 1954-12-14 Bell Telephone Labor Inc Fabricating of semiconductor translating devices
US2820154A (en) * 1954-11-15 1958-01-14 Rca Corp Semiconductor devices
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen

Also Published As

Publication number Publication date
US3001111A (en) 1961-09-19

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