FR1276080A - Transistor pour très hautes fréquences à performances élevées - Google Patents

Transistor pour très hautes fréquences à performances élevées

Info

Publication number
FR1276080A
FR1276080A FR839158A FR839158A FR1276080A FR 1276080 A FR1276080 A FR 1276080A FR 839158 A FR839158 A FR 839158A FR 839158 A FR839158 A FR 839158A FR 1276080 A FR1276080 A FR 1276080A
Authority
FR
France
Prior art keywords
performance transistor
frequencies
high performance
high frequencies
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR839158A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Priority to FR839158A priority Critical patent/FR1276080A/fr
Priority to FR848965A priority patent/FR1284673A/fr
Priority to GB30737/61A priority patent/GB990981A/en
Priority to GB34912/61A priority patent/GB990983A/en
Application granted granted Critical
Publication of FR1276080A publication Critical patent/FR1276080A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR839158A 1960-09-21 1960-09-21 Transistor pour très hautes fréquences à performances élevées Expired FR1276080A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR839158A FR1276080A (fr) 1960-09-21 1960-09-21 Transistor pour très hautes fréquences à performances élevées
FR848965A FR1284673A (fr) 1960-09-21 1961-01-06 Nouveau procédé de fabrication d'un transistor pour très haute fréquence à performances élevées
GB30737/61A GB990981A (en) 1960-09-21 1961-08-25 Improvements in and relating to transistors
GB34912/61A GB990983A (en) 1960-09-21 1961-09-28 Method of manufacturing a transistor for high performance at very high frequencies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR839158A FR1276080A (fr) 1960-09-21 1960-09-21 Transistor pour très hautes fréquences à performances élevées
FR848965A FR1284673A (fr) 1960-09-21 1961-01-06 Nouveau procédé de fabrication d'un transistor pour très haute fréquence à performances élevées

Publications (1)

Publication Number Publication Date
FR1276080A true FR1276080A (fr) 1961-11-17

Family

ID=26187562

Family Applications (2)

Application Number Title Priority Date Filing Date
FR839158A Expired FR1276080A (fr) 1960-09-21 1960-09-21 Transistor pour très hautes fréquences à performances élevées
FR848965A Expired FR1284673A (fr) 1960-09-21 1961-01-06 Nouveau procédé de fabrication d'un transistor pour très haute fréquence à performances élevées

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR848965A Expired FR1284673A (fr) 1960-09-21 1961-01-06 Nouveau procédé de fabrication d'un transistor pour très haute fréquence à performances élevées

Country Status (2)

Country Link
FR (2) FR1276080A (fr)
GB (2) GB990981A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1040400A (en) * 1963-11-27 1966-08-24 Standard Telephones Cables Ltd Semiconductor device

Also Published As

Publication number Publication date
FR1284673A (fr) 1962-02-16
GB990983A (en) 1965-05-05
GB990981A (en) 1965-05-05

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