FR1283785A - Système semi-conducteur - Google Patents

Système semi-conducteur

Info

Publication number
FR1283785A
FR1283785A FR855942A FR855942A FR1283785A FR 1283785 A FR1283785 A FR 1283785A FR 855942 A FR855942 A FR 855942A FR 855942 A FR855942 A FR 855942A FR 1283785 A FR1283785 A FR 1283785A
Authority
FR
France
Prior art keywords
semiconductor system
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR855942A
Other languages
English (en)
Inventor
Joachim Thuy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of FR1283785A publication Critical patent/FR1283785A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
FR855942A 1960-03-26 1961-03-17 Système semi-conducteur Expired FR1283785A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960T0018128 DE1196794C2 (de) 1960-03-26 1960-03-26 Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen

Publications (1)

Publication Number Publication Date
FR1283785A true FR1283785A (fr) 1962-02-02

Family

ID=7548834

Family Applications (1)

Application Number Title Priority Date Filing Date
FR855942A Expired FR1283785A (fr) 1960-03-26 1961-03-17 Système semi-conducteur

Country Status (3)

Country Link
DE (1) DE1196794C2 (fr)
FR (1) FR1283785A (fr)
GB (1) GB942216A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589704B1 (de) * 1966-11-22 1970-11-12 Itt Ind Gmbh Deutsche Verfahren zum Herstellen eines Halbleiterbauelementes
US4038676A (en) * 1974-12-19 1977-07-26 Siemens Aktiengesellschaft Pair of bipolar transistors having base zones which are electrically conductively connected to one another, and a process for producing the pair of transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
DE2816270C3 (de) * 1978-04-14 1983-01-13 Mitsubishi Denki K.K., Tokyo Injektions-Laserdiode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066283B (fr) * 1959-10-01
NL91993C (fr) * 1952-12-01
BE525202A (fr) * 1952-12-19
BE541575A (fr) * 1954-09-27
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
NL207367A (fr) * 1955-05-25
NL202486A (fr) * 1955-10-03
BE556305A (fr) * 1956-04-18
DE1063279B (de) * 1957-05-31 1959-08-13 Ibm Deutschland Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589704B1 (de) * 1966-11-22 1970-11-12 Itt Ind Gmbh Deutsche Verfahren zum Herstellen eines Halbleiterbauelementes
US4038676A (en) * 1974-12-19 1977-07-26 Siemens Aktiengesellschaft Pair of bipolar transistors having base zones which are electrically conductively connected to one another, and a process for producing the pair of transistors

Also Published As

Publication number Publication date
DE1196794B (de) 1965-07-15
GB942216A (en) 1963-11-20
DE1196794C2 (de) 1966-04-07

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