FR1381871A - Méthode de fabrication de semi-conducteurs - Google Patents

Méthode de fabrication de semi-conducteurs

Info

Publication number
FR1381871A
FR1381871A FR962821A FR962821A FR1381871A FR 1381871 A FR1381871 A FR 1381871A FR 962821 A FR962821 A FR 962821A FR 962821 A FR962821 A FR 962821A FR 1381871 A FR1381871 A FR 1381871A
Authority
FR
France
Prior art keywords
semiconductor manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR962821A
Other languages
English (en)
Inventor
Henley Frank Sterling
Cyril Francis Drake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB5231/63A external-priority patent/GB1029982A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority to FR962821A priority Critical patent/FR1381871A/fr
Application granted granted Critical
Publication of FR1381871A publication Critical patent/FR1381871A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR962821A 1963-02-08 1964-02-06 Méthode de fabrication de semi-conducteurs Expired FR1381871A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR962821A FR1381871A (fr) 1963-02-08 1964-02-06 Méthode de fabrication de semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB5231/63A GB1029982A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices
FR962821A FR1381871A (fr) 1963-02-08 1964-02-06 Méthode de fabrication de semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1381871A true FR1381871A (fr) 1964-12-14

Family

ID=26205766

Family Applications (1)

Application Number Title Priority Date Filing Date
FR962821A Expired FR1381871A (fr) 1963-02-08 1964-02-06 Méthode de fabrication de semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1381871A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083349A1 (fr) * 1970-03-17 1971-12-17 Western Electric Co
DE3141567A1 (de) * 1981-10-20 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083349A1 (fr) * 1970-03-17 1971-12-17 Western Electric Co
DE3141567A1 (de) * 1981-10-20 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen

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