FR1388916A - Montage de traduction de signaux électriques - Google Patents

Montage de traduction de signaux électriques

Info

Publication number
FR1388916A
FR1388916A FR959035A FR959035A FR1388916A FR 1388916 A FR1388916 A FR 1388916A FR 959035 A FR959035 A FR 959035A FR 959035 A FR959035 A FR 959035A FR 1388916 A FR1388916 A FR 1388916A
Authority
FR
France
Prior art keywords
electrical signal
translation assembly
signal translation
assembly
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR959035A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US248947A external-priority patent/US3348062A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR959035A priority Critical patent/FR1388916A/fr
Application granted granted Critical
Publication of FR1388916A publication Critical patent/FR1388916A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3052Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00Demodulation of amplitude-modulated oscillations
    • H03D1/14Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D13/00Circuits for comparing the phase or frequency of two mutually-independent oscillations
    • H03D13/007Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations
    • H03D13/008Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations using transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/14Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G11/00Limiting amplitude; Limiting rate of change of amplitude
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G11/00Limiting amplitude; Limiting rate of change of amplitude
    • H03G11/06Limiters of angle-modulated signals; such limiters combined with discriminators
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
FR959035A 1963-01-02 1963-12-31 Montage de traduction de signaux électriques Expired FR1388916A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR959035A FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US248947A US3348062A (en) 1963-01-02 1963-01-02 Electrical circuit employing an insulated gate field effect transistor having output circuit means coupled to the substrate thereof
FR959035A FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Publications (1)

Publication Number Publication Date
FR1388916A true FR1388916A (fr) 1965-02-12

Family

ID=26205161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR959035A Expired FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Country Status (1)

Country Link
FR (1) FR1388916A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115408974A (zh) * 2021-05-27 2022-11-29 广东省大湾区集成电路与系统应用研究院 一种场效应晶体管效能提升方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115408974A (zh) * 2021-05-27 2022-11-29 广东省大湾区集成电路与系统应用研究院 一种场效应晶体管效能提升方法
CN115408974B (zh) * 2021-05-27 2025-07-29 锐立平芯微电子(广州)有限责任公司 一种场效应晶体管效能提升方法

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