FR1388916A - Montage de traduction de signaux électriques - Google Patents

Montage de traduction de signaux électriques

Info

Publication number
FR1388916A
FR1388916A FR959035A FR959035A FR1388916A FR 1388916 A FR1388916 A FR 1388916A FR 959035 A FR959035 A FR 959035A FR 959035 A FR959035 A FR 959035A FR 1388916 A FR1388916 A FR 1388916A
Authority
FR
France
Prior art keywords
electrical signal
translation assembly
signal translation
assembly
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR959035A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US248947A external-priority patent/US3348062A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR959035A priority Critical patent/FR1388916A/fr
Application granted granted Critical
Publication of FR1388916A publication Critical patent/FR1388916A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D13/00—Circuits for comparing the phase or frequency of two mutually-independent oscillations
    • H03D13/007—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations
    • H03D13/008—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations using transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/14—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
    • H03G11/06—Limiters of angle-modulated signals; such limiters combined with discriminators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
FR959035A 1963-01-02 1963-12-31 Montage de traduction de signaux électriques Expired FR1388916A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR959035A FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US248947A US3348062A (en) 1963-01-02 1963-01-02 Electrical circuit employing an insulated gate field effect transistor having output circuit means coupled to the substrate thereof
FR959035A FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Publications (1)

Publication Number Publication Date
FR1388916A true FR1388916A (fr) 1965-02-12

Family

ID=26205161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR959035A Expired FR1388916A (fr) 1963-01-02 1963-12-31 Montage de traduction de signaux électriques

Country Status (1)

Country Link
FR (1) FR1388916A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115408974A (zh) * 2021-05-27 2022-11-29 广东省大湾区集成电路与系统应用研究院 一种场效应晶体管效能提升方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115408974A (zh) * 2021-05-27 2022-11-29 广东省大湾区集成电路与系统应用研究院 一种场效应晶体管效能提升方法
CN115408974B (zh) * 2021-05-27 2025-07-29 锐立平芯微电子(广州)有限责任公司 一种场效应晶体管效能提升方法

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