FR1388916A - Montage de traduction de signaux électriques - Google Patents
Montage de traduction de signaux électriquesInfo
- Publication number
- FR1388916A FR1388916A FR959035A FR959035A FR1388916A FR 1388916 A FR1388916 A FR 1388916A FR 959035 A FR959035 A FR 959035A FR 959035 A FR959035 A FR 959035A FR 1388916 A FR1388916 A FR 1388916A
- Authority
- FR
- France
- Prior art keywords
- electrical signal
- translation assembly
- signal translation
- assembly
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
- H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D13/00—Circuits for comparing the phase or frequency of two mutually-independent oscillations
- H03D13/007—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations
- H03D13/008—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations using transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
- H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
- H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
- H03D3/14—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
- H03G11/06—Limiters of angle-modulated signals; such limiters combined with discriminators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR959035A FR1388916A (fr) | 1963-01-02 | 1963-12-31 | Montage de traduction de signaux électriques |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US248947A US3348062A (en) | 1963-01-02 | 1963-01-02 | Electrical circuit employing an insulated gate field effect transistor having output circuit means coupled to the substrate thereof |
| FR959035A FR1388916A (fr) | 1963-01-02 | 1963-12-31 | Montage de traduction de signaux électriques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1388916A true FR1388916A (fr) | 1965-02-12 |
Family
ID=26205161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR959035A Expired FR1388916A (fr) | 1963-01-02 | 1963-12-31 | Montage de traduction de signaux électriques |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1388916A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115408974A (zh) * | 2021-05-27 | 2022-11-29 | 广东省大湾区集成电路与系统应用研究院 | 一种场效应晶体管效能提升方法 |
-
1963
- 1963-12-31 FR FR959035A patent/FR1388916A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115408974A (zh) * | 2021-05-27 | 2022-11-29 | 广东省大湾区集成电路与系统应用研究院 | 一种场效应晶体管效能提升方法 |
| CN115408974B (zh) * | 2021-05-27 | 2025-07-29 | 锐立平芯微电子(广州)有限责任公司 | 一种场效应晶体管效能提升方法 |
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