FR1517308A - Procédé de polissage de matériaux semi-conducteurs - Google Patents
Procédé de polissage de matériaux semi-conducteursInfo
- Publication number
- FR1517308A FR1517308A FR8436A FR06008436A FR1517308A FR 1517308 A FR1517308 A FR 1517308A FR 8436 A FR8436 A FR 8436A FR 06008436 A FR06008436 A FR 06008436A FR 1517308 A FR1517308 A FR 1517308A
- Authority
- FR
- France
- Prior art keywords
- polishing process
- semiconductor materials
- polishing
- semiconductor
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/102—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being able to rotate freely due to a frictional contact with the lapping tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54958666A | 1966-05-12 | 1966-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1517308A true FR1517308A (fr) | 1968-03-15 |
Family
ID=24193603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8436A Expired FR1517308A (fr) | 1966-05-12 | 1967-03-23 | Procédé de polissage de matériaux semi-conducteurs |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3436259A (fr) |
| DE (1) | DE1621473B2 (fr) |
| FR (1) | FR1517308A (fr) |
| GB (1) | GB1168536A (fr) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549439A (en) * | 1967-09-15 | 1970-12-22 | North American Rockwell | Chemical lapping method |
| US3629023A (en) * | 1968-07-17 | 1971-12-21 | Minnesota Mining & Mfg | METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM |
| US3930870A (en) * | 1973-12-28 | 1976-01-06 | International Business Machines Corporation | Silicon polishing solution preparation |
| US3951710A (en) * | 1974-09-13 | 1976-04-20 | International Business Machines Corporation | Method for removing copper contaminant from semiconductor surfaces |
| US4050954A (en) * | 1976-03-25 | 1977-09-27 | International Business Machines Corporation | Surface treatment of semiconductor substrates |
| US4640846A (en) * | 1984-09-25 | 1987-02-03 | Yue Kuo | Semiconductor spin coating method |
| FR2580974B1 (fr) * | 1985-04-26 | 1989-05-19 | Lam Plan Sa | Dispositif et procede de polissage |
| JPH01121114U (fr) * | 1988-02-04 | 1989-08-16 | ||
| JPH07108815B2 (ja) * | 1988-02-22 | 1995-11-22 | 日本特殊陶業株式会社 | 窒化珪素質焼結体の製造方法 |
| US5399528A (en) * | 1989-06-01 | 1995-03-21 | Leibovitz; Jacques | Multi-layer fabrication in integrated circuit systems |
| GB9121309D0 (en) * | 1991-10-08 | 1991-11-20 | Inventive Plastic Products Lim | Injection molding machine |
| US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5360509A (en) * | 1993-03-08 | 1994-11-01 | Gi Corporation | Low cost method of fabricating epitaxial semiconductor devices |
| US6248651B1 (en) | 1998-06-24 | 2001-06-19 | General Semiconductor, Inc. | Low cost method of fabricating transient voltage suppressor semiconductor devices or the like |
| US6328872B1 (en) * | 1999-04-03 | 2001-12-11 | Nutool, Inc. | Method and apparatus for plating and polishing a semiconductor substrate |
| US6409904B1 (en) * | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
| US7204917B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
| US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
| US20090020437A1 (en) * | 2000-02-23 | 2009-01-22 | Basol Bulent M | Method and system for controlled material removal by electrochemical polishing |
| WO2002023613A2 (fr) * | 2000-09-15 | 2002-03-21 | Rodel Holdings, Inc. | Systeme de planarisation et de polissage chimiomecaniques utilise pour le depot de metal |
| US6530824B2 (en) | 2001-03-09 | 2003-03-11 | Rodel Holdings, Inc. | Method and composition for polishing by CMP |
| FR2914925B1 (fr) * | 2007-04-13 | 2009-06-05 | Altis Semiconductor Snc | Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau |
| JP5287982B2 (ja) | 2009-04-13 | 2013-09-11 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
| JP5381304B2 (ja) | 2009-05-08 | 2014-01-08 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
| GB201117279D0 (en) * | 2011-10-06 | 2011-11-16 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3224904A (en) * | 1963-03-18 | 1965-12-21 | Bell Telephone Labor Inc | Semiconductor surface cleaning |
| US3342652A (en) * | 1964-04-02 | 1967-09-19 | Ibm | Chemical polishing of a semi-conductor substrate |
-
1966
- 1966-05-12 US US549586A patent/US3436259A/en not_active Expired - Lifetime
-
1967
- 1967-03-23 FR FR8436A patent/FR1517308A/fr not_active Expired
- 1967-04-20 GB GB08166/67A patent/GB1168536A/en not_active Expired
- 1967-05-12 DE DE19671621473 patent/DE1621473B2/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1168536A (en) | 1969-10-29 |
| US3436259A (en) | 1969-04-01 |
| DE1621473A1 (de) | 1970-07-23 |
| DE1621473B2 (de) | 1971-09-30 |
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