FR2012133A1 - - Google Patents

Info

Publication number
FR2012133A1
FR2012133A1 FR6918094A FR6918094A FR2012133A1 FR 2012133 A1 FR2012133 A1 FR 2012133A1 FR 6918094 A FR6918094 A FR 6918094A FR 6918094 A FR6918094 A FR 6918094A FR 2012133 A1 FR2012133 A1 FR 2012133A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR6918094A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2012133A1 publication Critical patent/FR2012133A1/fr
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/6903Inorganic materials containing silicon
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0751Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506Formation of intermediate materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136Coating process making radiation sensitive element

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Manufacturing Of Printed Wiring (AREA)
FR6918094A 1968-07-02 1969-06-04 Pending FR2012133A1 (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74202568A 1968-07-02 1968-07-02

Publications (1)

Publication Number Publication Date
FR2012133A1 true FR2012133A1 (2) 1970-03-13

Family

ID=24983198

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6918094A Pending FR2012133A1 (2) 1968-07-02 1969-06-04

Country Status (4)

Country Link
US (1) US3549368A (2)
CA (1) CA918483A (2)
FR (1) FR2012133A1 (2)
GB (1) GB1262513A (2)

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US3779774A (en) * 1972-05-09 1973-12-18 Xidex Corp Silicone surfactants for vesicular films
FR2193864B1 (2) * 1972-07-31 1974-12-27 Rhone Poulenc Sa
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
JPS5525418B2 (2) * 1972-12-20 1980-07-05
JPS53292B2 (2) * 1974-02-01 1978-01-07
US3962004A (en) * 1974-11-29 1976-06-08 Rca Corporation Pattern definition in an organic layer
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4173683A (en) * 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
US4330569A (en) * 1979-05-25 1982-05-18 Ncr Corporation Method for conditioning nitride surface
CA1184321A (en) * 1981-06-30 1985-03-19 John C. Marinace Adhesion of a photoresist to a substrate
US4524126A (en) * 1981-06-30 1985-06-18 International Business Machines Corporation Adhesion of a photoresist to a substrate
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
US4491629A (en) * 1982-02-22 1985-01-01 Tokyo Shibaura Denki Kabushiki Kaisha Water soluble photoresist composition with bisazide, diazo, polymer and silane
EP0104235A4 (en) * 1982-03-29 1984-09-14 Motorola Inc METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS.
US4431685A (en) * 1982-07-02 1984-02-14 International Business Machines Corporation Decreasing plated metal defects
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
US4535054A (en) * 1983-05-05 1985-08-13 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography
JPS60147729A (ja) * 1984-01-12 1985-08-03 Toshiba Corp ホトレジスト組成物
US4592926A (en) * 1984-05-21 1986-06-03 Machine Technology, Inc. Processing apparatus and method
JPS61248035A (ja) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd 密着性の改良されたホトレジスト組成物
US4806458A (en) * 1985-10-28 1989-02-21 Hoechst Celanese Corporation Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
US4692398A (en) * 1985-10-28 1987-09-08 American Hoechst Corporation Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
US4976817A (en) * 1988-12-09 1990-12-11 Morton International, Inc. Wet lamination process and apparatus
US5429673A (en) * 1993-10-01 1995-07-04 Silicon Resources, Inc. Binary vapor adhesion promoters and methods of using the same
US5582703A (en) * 1994-12-12 1996-12-10 Palomar Technologies Corporation Method of fabricating an ultra-high resolution three-color screen
US5846692A (en) * 1995-12-04 1998-12-08 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US5578505A (en) * 1995-12-15 1996-11-26 Micron Technology, Inc. Methods for measuring the surface area of a semiconductor wafer
US6387719B1 (en) 2001-02-28 2002-05-14 Lexmark International, Inc. Method for improving adhesion
US7851138B2 (en) 2007-07-19 2010-12-14 Hitachi Global Storage Technologies, Netherlands, B.V. Patterning a surface comprising silicon and carbon
US9953952B2 (en) * 2008-08-20 2018-04-24 Infineon Technologies Ag Semiconductor device having a sealant layer including carbon directly contact the chip and the carrier
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
TWI707038B (zh) 2013-08-05 2020-10-11 美商扭轉生物科技有限公司 重新合成之基因庫
WO2016126882A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Methods and devices for de novo oligonucleic acid assembly
WO2016126987A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Compositions and methods for synthetic gene assembly
JP6699256B2 (ja) * 2015-03-16 2020-05-27 大日本印刷株式会社 インプリントモールド製造用基材とインプリントモールドの製造方法
US9981239B2 (en) 2015-04-21 2018-05-29 Twist Bioscience Corporation Devices and methods for oligonucleic acid library synthesis
KR20180050411A (ko) 2015-09-18 2018-05-14 트위스트 바이오사이언스 코포레이션 올리고핵산 변이체 라이브러리 및 그의 합성
CN108698012A (zh) 2015-09-22 2018-10-23 特韦斯特生物科学公司 用于核酸合成的柔性基底
GB201517629D0 (en) * 2015-10-06 2015-11-18 Isis Innovation Device architecture
WO2017095958A1 (en) 2015-12-01 2017-06-08 Twist Bioscience Corporation Functionalized surfaces and preparation thereof
US10177001B2 (en) 2016-05-31 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Surface modifying material for semiconductor device fabrication
KR102212257B1 (ko) 2016-08-22 2021-02-04 트위스트 바이오사이언스 코포레이션 드 노보 합성된 핵산 라이브러리
WO2018057526A2 (en) 2016-09-21 2018-03-29 Twist Bioscience Corporation Nucleic acid based data storage
EP3554514A4 (en) 2016-12-16 2020-08-05 Twist Bioscience Corporation BANKS OF VARIANTS OF IMMUNOLOGICAL SYNAPSE AND THEIR SYNTHESIS
US10096477B2 (en) 2017-02-15 2018-10-09 International Business Machines Corporation Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
CN110892485B (zh) 2017-02-22 2024-03-22 特韦斯特生物科学公司 基于核酸的数据存储
AU2018234629A1 (en) 2017-03-15 2019-10-17 Twist Bioscience Corporation Variant libraries of the immunological synapse and synthesis thereof
WO2018231864A1 (en) 2017-06-12 2018-12-20 Twist Bioscience Corporation Methods for seamless nucleic acid assembly
JP7169999B2 (ja) 2017-06-12 2022-11-11 ツイスト バイオサイエンス コーポレーション シームレス核酸アセンブリのための方法
AU2018328847A1 (en) 2017-09-11 2020-04-23 Twist Bioscience Corporation GPCR binding proteins and synthesis thereof
WO2019079769A1 (en) 2017-10-20 2019-04-25 Twist Bioscience Corporation HEATED NANOWELLS FOR THE SYNTHESIS OF POLYNUCLEOTIDES
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US11031244B2 (en) * 2018-08-14 2021-06-08 Lam Research Corporation Modification of SNO2 surface for EUV lithography
WO2020139871A1 (en) 2018-12-26 2020-07-02 Twist Bioscience Corporation Highly accurate de novo polynucleotide synthesis
WO2020176678A1 (en) 2019-02-26 2020-09-03 Twist Bioscience Corporation Variant nucleic acid libraries for glp1 receptor
AU2020227802A1 (en) 2019-02-26 2021-10-14 Twist Bioscience Corporation Variant nucleic acid libraries for antibody optimization
CA3144644A1 (en) 2019-06-21 2020-12-24 Twist Bioscience Corporation Barcode-based nucleic acid sequence assembly
US12091777B2 (en) 2019-09-23 2024-09-17 Twist Bioscience Corporation Variant nucleic acid libraries for CRTH2
EP4034564A4 (en) 2019-09-23 2023-12-13 Twist Bioscience Corporation VARIANT NUCLEIC ACID LIBRARIES FOR SINGLE-DOMAIN ANTIBODIES
BR112022011235A2 (pt) 2019-12-09 2022-12-13 Twist Bioscience Corp Bibliotecas de variantes de ácido nucleico para receptores de adenosina
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備

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US3163534A (en) * 1961-03-13 1964-12-29 Harris Intertype Corp Lithographic plate including a hydrophilic barrier layer comprising a silane, an acrylic compound, and an organic metal ester
US3398210A (en) * 1963-06-17 1968-08-20 Dow Corning Compositions comprising acryloxyalkylsilanes and unsaturated polyester resins
US3405017A (en) * 1965-02-26 1968-10-08 Hughes Aircraft Co Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry
US3482977A (en) * 1966-02-11 1969-12-09 Sylvania Electric Prod Method of forming adherent masks on oxide coated semiconductor bodies

Also Published As

Publication number Publication date
GB1262513A (en) 1972-02-02
DE1915085B2 (de) 1976-05-26
DE1915085A1 (de) 1970-03-05
CA918483A (en) 1973-01-09
US3549368A (en) 1970-12-22

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