FR2017410A1 - - Google Patents

Info

Publication number
FR2017410A1
FR2017410A1 FR6927264A FR6927264A FR2017410A1 FR 2017410 A1 FR2017410 A1 FR 2017410A1 FR 6927264 A FR6927264 A FR 6927264A FR 6927264 A FR6927264 A FR 6927264A FR 2017410 A1 FR2017410 A1 FR 2017410A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6927264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2017410A1 publication Critical patent/FR2017410A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
FR6927264A 1968-09-05 1969-08-07 Withdrawn FR2017410A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75753368A 1968-09-05 1968-09-05

Publications (1)

Publication Number Publication Date
FR2017410A1 true FR2017410A1 (fr) 1970-05-22

Family

ID=25048180

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6927264A Withdrawn FR2017410A1 (fr) 1968-09-05 1969-08-07

Country Status (5)

Country Link
US (1) US3547716A (fr)
CA (1) CA931278A (fr)
CH (1) CH486127A (fr)
FR (1) FR2017410A1 (fr)
GB (1) GB1263127A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780426A (en) * 1969-10-15 1973-12-25 Y Ono Method of forming a semiconductor circuit element in an isolated epitaxial layer
US3885998A (en) * 1969-12-05 1975-05-27 Siemens Ag Method for the simultaneous formation of semiconductor components with individually tailored isolation regions
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
FR2160709B1 (fr) * 1971-11-22 1974-09-27 Radiotechnique Compelec
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3898107A (en) * 1973-12-03 1975-08-05 Rca Corp Method of making a junction-isolated semiconductor integrated circuit device
US4085382A (en) * 1976-11-22 1978-04-18 Linear Technology Inc. Class B amplifier
JPS56103460A (en) * 1980-01-21 1981-08-18 Mitsubishi Electric Corp Semiconductor device
US4578692A (en) * 1984-04-16 1986-03-25 Sprague Electric Company Integrated circuit with stress isolated Hall element
IT1218128B (it) * 1987-03-05 1990-04-12 Sgs Microelettronica Spa Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
GB2215128B (en) * 1988-02-23 1991-10-16 Stc Plc Improvements in integrated circuits
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
US5296047A (en) * 1992-01-28 1994-03-22 Hewlett-Packard Co. Epitaxial silicon starting material
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터
JP3602242B2 (ja) * 1996-02-14 2004-12-15 株式会社ルネサステクノロジ 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047388A (fr) * 1962-10-05
US3335341A (en) * 1964-03-06 1967-08-08 Westinghouse Electric Corp Diode structure in semiconductor integrated circuit and method of making the same
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Also Published As

Publication number Publication date
CH486127A (de) 1970-02-15
DE1943300A1 (de) 1970-03-12
GB1263127A (en) 1972-02-09
DE1943300B2 (de) 1975-10-16
US3547716A (en) 1970-12-15
CA931278A (en) 1973-07-31

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Legal Events

Date Code Title Description
ST Notification of lapse