IT1218128B - Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza - Google Patents

Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza

Info

Publication number
IT1218128B
IT1218128B IT19593/87A IT1959387A IT1218128B IT 1218128 B IT1218128 B IT 1218128B IT 19593/87 A IT19593/87 A IT 19593/87A IT 1959387 A IT1959387 A IT 1959387A IT 1218128 B IT1218128 B IT 1218128B
Authority
IT
Italy
Prior art keywords
mos transistors
integrated structure
signal transfer
power mos
transfer network
Prior art date
Application number
IT19593/87A
Other languages
English (en)
Other versions
IT8719593A0 (it
Inventor
Salvatore Musumeci
Roberto Pellicano'
Sergio Palara
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19593/87A priority Critical patent/IT1218128B/it
Publication of IT8719593A0 publication Critical patent/IT8719593A0/it
Priority to EP88200290A priority patent/EP0283066A1/en
Priority to JP63049962A priority patent/JPS63228659A/ja
Priority to US07/504,720 priority patent/US4969030A/en
Application granted granted Critical
Publication of IT1218128B publication Critical patent/IT1218128B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
IT19593/87A 1987-03-05 1987-03-05 Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza IT1218128B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT19593/87A IT1218128B (it) 1987-03-05 1987-03-05 Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza
EP88200290A EP0283066A1 (en) 1987-03-05 1988-02-18 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors
JP63049962A JPS63228659A (ja) 1987-03-05 1988-03-04 信号転送回路網の集積構造
US07/504,720 US4969030A (en) 1987-03-05 1990-04-03 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19593/87A IT1218128B (it) 1987-03-05 1987-03-05 Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza

Publications (2)

Publication Number Publication Date
IT8719593A0 IT8719593A0 (it) 1987-03-05
IT1218128B true IT1218128B (it) 1990-04-12

Family

ID=11159312

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19593/87A IT1218128B (it) 1987-03-05 1987-03-05 Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza

Country Status (4)

Country Link
US (1) US4969030A (it)
EP (1) EP0283066A1 (it)
JP (1) JPS63228659A (it)
IT (1) IT1218128B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
IT1236667B (it) * 1989-11-07 1993-03-25 Sgs Thomson Microelectronics Dispositivo di protezione contro la rottura di una regione diffusa di tipo n+ inserita in una struttura integrata di potenza a semiconduttore di tipo verticale
GB2240951B (en) * 1990-02-09 1994-10-05 Canon Kk Ink jet recording system
EP0491217A1 (de) * 1990-12-19 1992-06-24 Siemens Aktiengesellschaft Integrierte Transistor-Freilaufdioden-Anordnung
EP0513415A1 (en) * 1991-05-16 1992-11-19 Kabushiki Kaisha Toshiba Insulated gate FET having double-layered wells of low and high impurity concentrations and method of manufacturing the same
US5286995A (en) * 1992-07-14 1994-02-15 Texas Instruments Incorporated Isolated resurf LDMOS devices for multiple outputs on one die
DE69427904T2 (de) * 1994-05-31 2002-04-04 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Halbleiterdiode
JP3918220B2 (ja) * 1997-02-27 2007-05-23 ソニー株式会社 半導体装置及びその製造方法
US6502893B1 (en) 2002-02-08 2003-01-07 Lawrence M. Corliss, Jr. Extendable deck assembly
US20130069154A1 (en) * 2011-09-20 2013-03-21 Alpha And Omega Semiconductor Incorporated Semiconductor chip integrating high and low voltage devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
US20130071994A1 (en) * 2011-09-20 2013-03-21 Alpha And Omega Semiconductor Incorporated Method of integrating high voltage devices
US20130069157A1 (en) * 2011-09-20 2013-03-21 Alpha And Omega Semiconductor Incorporated Semiconductor chip integrating high and low voltage devices
CN103515324B (zh) * 2012-06-30 2016-10-26 万国半导体股份有限公司 集成高压器件的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
WO1984001053A1 (fr) * 1982-08-26 1984-03-15 Mitsubishi Electric Corp Dispositif a semiconducteurs
FR2543364B1 (fr) * 1983-03-25 1986-09-05 Trt Telecom Radio Electr Procede de realisation de transistors par integration monolithique en technologie bipolaire et circuits integres ainsi obtenus
JPS60124863A (ja) * 1983-12-09 1985-07-03 Nec Ic Microcomput Syst Ltd Ｍｏｓ集積回路装置
JPS60140844A (ja) * 1983-12-28 1985-07-25 Nec Corp 半導体装置
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
FR2571544B1 (fr) * 1984-10-05 1987-07-31 Haond Michel Procede de fabrication d'ilots de silicium monocristallin isoles electriquement les uns des autres
US4648909A (en) * 1984-11-28 1987-03-10 Fairchild Semiconductor Corporation Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions

Also Published As

Publication number Publication date
US4969030A (en) 1990-11-06
IT8719593A0 (it) 1987-03-05
EP0283066A1 (en) 1988-09-21
JPS63228659A (ja) 1988-09-22

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Effective date: 19970329