FR2056965A1 - Forming si oxide regions on si semiconductor - substrate - Google Patents

Forming si oxide regions on si semiconductor - substrate

Info

Publication number
FR2056965A1
FR2056965A1 FR7028328A FR7028328A FR2056965A1 FR 2056965 A1 FR2056965 A1 FR 2056965A1 FR 7028328 A FR7028328 A FR 7028328A FR 7028328 A FR7028328 A FR 7028328A FR 2056965 A1 FR2056965 A1 FR 2056965A1
Authority
FR
France
Prior art keywords
semiconductor
substrate
forming
oxide regions
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7028328A
Other languages
English (en)
French (fr)
Other versions
FR2056965B1 (2
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2056965A1 publication Critical patent/FR2056965A1/fr
Application granted granted Critical
Publication of FR2056965B1 publication Critical patent/FR2056965B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
FR7028328A 1969-08-04 1970-07-31 Forming si oxide regions on si semiconductor - substrate Granted FR2056965A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84701269A 1969-08-04 1969-08-04

Publications (2)

Publication Number Publication Date
FR2056965A1 true FR2056965A1 (en) 1971-05-07
FR2056965B1 FR2056965B1 (2) 1974-10-11

Family

ID=25299548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7028328A Granted FR2056965A1 (en) 1969-08-04 1970-07-31 Forming si oxide regions on si semiconductor - substrate

Country Status (8)

Country Link
JP (1) JPS504511B1 (2)
BE (1) BE753245A (2)
DE (1) DE2038361A1 (2)
ES (1) ES382248A1 (2)
FR (1) FR2056965A1 (2)
NL (1) NL7011437A (2)
SE (1) SE371539B (2)
ZA (1) ZA705326B (2)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6704958A (2) * 1966-04-08 1967-10-09
NL6614016A (2) * 1966-10-05 1968-04-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6704958A (2) * 1966-04-08 1967-10-09
NL6614016A (2) * 1966-10-05 1968-04-08

Also Published As

Publication number Publication date
ES382248A1 (es) 1972-11-16
FR2056965B1 (2) 1974-10-11
BE753245A (fr) 1970-12-16
NL7011437A (2) 1971-02-08
JPS504511B1 (2) 1975-02-20
SE371539B (2) 1974-11-18
DE2038361A1 (de) 1971-02-18
ZA705326B (en) 1971-04-28

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Legal Events

Date Code Title Description
ST Notification of lapse