JPS51136289A - Semi-conductor producing - Google Patents

Semi-conductor producing

Info

Publication number
JPS51136289A
JPS51136289A JP5965675A JP5965675A JPS51136289A JP S51136289 A JPS51136289 A JP S51136289A JP 5965675 A JP5965675 A JP 5965675A JP 5965675 A JP5965675 A JP 5965675A JP S51136289 A JPS51136289 A JP S51136289A
Authority
JP
Japan
Prior art keywords
semi
conductor producing
conductor
producing
multiply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5965675A
Other languages
Japanese (ja)
Inventor
Yoshiaki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5965675A priority Critical patent/JPS51136289A/en
Publication of JPS51136289A publication Critical patent/JPS51136289A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: Etching for side etch prevention of multiply grown oxide film and pattern accuracy improving.
COPYRIGHT: (C)1976,JPO&Japio
JP5965675A 1975-05-21 1975-05-21 Semi-conductor producing Pending JPS51136289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5965675A JPS51136289A (en) 1975-05-21 1975-05-21 Semi-conductor producing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5965675A JPS51136289A (en) 1975-05-21 1975-05-21 Semi-conductor producing

Publications (1)

Publication Number Publication Date
JPS51136289A true JPS51136289A (en) 1976-11-25

Family

ID=13119451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5965675A Pending JPS51136289A (en) 1975-05-21 1975-05-21 Semi-conductor producing

Country Status (1)

Country Link
JP (1) JPS51136289A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513964A (en) * 1978-07-17 1980-01-31 Nec Corp Method of manufacturing semiconductor device
JPS5679434A (en) * 1979-11-30 1981-06-30 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5683035A (en) * 1979-12-11 1981-07-07 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS598357A (en) * 1982-07-06 1984-01-17 Mitsubishi Electric Corp Formation of contact hole in semiconductor device
JPS60246640A (en) * 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH04257222A (en) * 1991-02-12 1992-09-11 Fujitsu Ltd Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513964A (en) * 1978-07-17 1980-01-31 Nec Corp Method of manufacturing semiconductor device
JPS5679434A (en) * 1979-11-30 1981-06-30 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5683035A (en) * 1979-12-11 1981-07-07 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS598357A (en) * 1982-07-06 1984-01-17 Mitsubishi Electric Corp Formation of contact hole in semiconductor device
JPS60246640A (en) * 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH04257222A (en) * 1991-02-12 1992-09-11 Fujitsu Ltd Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5351970A (en) Manufacture for semiconductor substrate
JPS5211774A (en) Method of detecting relative position of patterns
JPS5243370A (en) Method of forming depression in semiconductor substrate
JPS51118392A (en) Manuforcturing process for semiconductor unit
JPS53127266A (en) Forming method of marker
JPS5250690A (en) Etching process
JPS5227368A (en) Selection etching method
JPS543473A (en) Manufacture of semiconductor device
JPS52112281A (en) Manufacture of semiconductor
JPS53105982A (en) Micropattern formation method
JPS5251872A (en) Production of semiconductor device
JPS5269649A (en) Semiconductor distortion element
JPS5213778A (en) Plasma-etching method
JPS533169A (en) Production of semiconductor device
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS5340282A (en) Manufacture of semiconductor unit
JPS5315765A (en) Vacuum caontact prevention method of hard mask
JPS5258376A (en) Etching for flattening of semiconductor surface
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS5248469A (en) Process for production of semiconductor device
JPS5254378A (en) Production of semiconductor device
JPS51113571A (en) Precision processing method of semi-conductor
JPS5336483A (en) Manufacture of semiconductor device
JPS5390831A (en) Forming method for integration element
JPS522175A (en) Etching process