FR2103446A1 - Field effect transistor - with insulated gate electrode exercising sp charge control - Google Patents

Field effect transistor - with insulated gate electrode exercising sp charge control

Info

Publication number
FR2103446A1
FR2103446A1 FR7130257A FR7130257A FR2103446A1 FR 2103446 A1 FR2103446 A1 FR 2103446A1 FR 7130257 A FR7130257 A FR 7130257A FR 7130257 A FR7130257 A FR 7130257A FR 2103446 A1 FR2103446 A1 FR 2103446A1
Authority
FR
France
Prior art keywords
gate electrode
exercising
field effect
effect transistor
charge control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7130257A
Other languages
English (en)
Other versions
FR2103446B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2103446A1 publication Critical patent/FR2103446A1/fr
Application granted granted Critical
Publication of FR2103446B1 publication Critical patent/FR2103446B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

Landscapes

  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7130257A 1970-08-22 1971-08-19 Field effect transistor - with insulated gate electrode exercising sp charge control Granted FR2103446A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702041839 DE2041839A1 (de) 1970-08-22 1970-08-22 Feldeffekttransistor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2103446A1 true FR2103446A1 (en) 1972-04-14
FR2103446B1 FR2103446B1 (fr) 1974-05-10

Family

ID=5780536

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7130257A Granted FR2103446A1 (en) 1970-08-22 1971-08-19 Field effect transistor - with insulated gate electrode exercising sp charge control

Country Status (6)

Country Link
AT (1) AT321990B (fr)
BE (1) BE771571A (fr)
CH (1) CH528822A (fr)
DE (1) DE2041839A1 (fr)
FR (1) FR2103446A1 (fr)
NL (1) NL7110325A (fr)

Also Published As

Publication number Publication date
NL7110325A (fr) 1972-02-24
DE2041839A1 (de) 1972-03-02
CH528822A (de) 1972-09-30
FR2103446B1 (fr) 1974-05-10
AT321990B (de) 1975-04-25
BE771571A (fr) 1971-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse