JPS51137385A - Complementary type insulating gate field effect semi conductor device - Google Patents

Complementary type insulating gate field effect semi conductor device

Info

Publication number
JPS51137385A
JPS51137385A JP50061660A JP6166075A JPS51137385A JP S51137385 A JPS51137385 A JP S51137385A JP 50061660 A JP50061660 A JP 50061660A JP 6166075 A JP6166075 A JP 6166075A JP S51137385 A JPS51137385 A JP S51137385A
Authority
JP
Japan
Prior art keywords
field effect
semi conductor
gate field
conductor device
type insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50061660A
Other languages
Japanese (ja)
Other versions
JPS5939902B2 (en
Inventor
Takeshi Yamano
Masahiko Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50061660A priority Critical patent/JPS5939902B2/en
Publication of JPS51137385A publication Critical patent/JPS51137385A/en
Publication of JPS5939902B2 publication Critical patent/JPS5939902B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent the destruction of gate insulating film by flowing the over voltage applied to the gate electrode of an enhance channel C-FET to semi conductor wafer before it is applied to the gate electrode.
JP50061660A 1975-05-22 1975-05-22 Complementary insulated gate field effect semiconductor device Expired JPS5939902B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50061660A JPS5939902B2 (en) 1975-05-22 1975-05-22 Complementary insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50061660A JPS5939902B2 (en) 1975-05-22 1975-05-22 Complementary insulated gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS51137385A true JPS51137385A (en) 1976-11-27
JPS5939902B2 JPS5939902B2 (en) 1984-09-27

Family

ID=13177588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50061660A Expired JPS5939902B2 (en) 1975-05-22 1975-05-22 Complementary insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5939902B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165969A (en) * 1986-01-17 1987-07-22 Sanyo Electric Co Ltd CMOS semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165969A (en) * 1986-01-17 1987-07-22 Sanyo Electric Co Ltd CMOS semiconductor device

Also Published As

Publication number Publication date
JPS5939902B2 (en) 1984-09-27

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