FR2108101A1 - Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode - Google Patents

Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode

Info

Publication number
FR2108101A1
FR2108101A1 FR7134990A FR7134990A FR2108101A1 FR 2108101 A1 FR2108101 A1 FR 2108101A1 FR 7134990 A FR7134990 A FR 7134990A FR 7134990 A FR7134990 A FR 7134990A FR 2108101 A1 FR2108101 A1 FR 2108101A1
Authority
FR
France
Prior art keywords
photo
diode
emissive
electronic component
high resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7134990A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2108101A1 publication Critical patent/FR2108101A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/287Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN heterojunction gates
    • H10F30/2877Field-effect phototransistors having PN heterojunction gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
FR7134990A 1970-09-30 1971-09-29 Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode Withdrawn FR2108101A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048181 DE2048181A1 (de) 1970-09-30 1970-09-30 Fototransistor

Publications (1)

Publication Number Publication Date
FR2108101A1 true FR2108101A1 (en) 1972-05-12

Family

ID=5783867

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7134990A Withdrawn FR2108101A1 (en) 1970-09-30 1971-09-29 Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode

Country Status (6)

Country Link
AT (1) AT307525B (fr)
CH (1) CH524897A (fr)
DE (1) DE2048181A1 (fr)
FR (1) FR2108101A1 (fr)
NL (1) NL7113370A (fr)
SE (1) SE362539B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2535112A1 (fr) * 1982-10-22 1984-04-27 Thomson Csf Dispositif semi-conducteur optoelectronique de type phototransistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145279B (en) * 1983-08-18 1987-10-21 Standard Telephones Cables Ltd Photodetector integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2535112A1 (fr) * 1982-10-22 1984-04-27 Thomson Csf Dispositif semi-conducteur optoelectronique de type phototransistor

Also Published As

Publication number Publication date
DE2048181A1 (de) 1972-04-06
CH524897A (de) 1972-06-30
AT307525B (de) 1973-05-25
NL7113370A (fr) 1972-04-05
SE362539B (fr) 1973-12-10

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Legal Events

Date Code Title Description
ST Notification of lapse