FR2108101A1 - Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode - Google Patents
Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diodeInfo
- Publication number
- FR2108101A1 FR2108101A1 FR7134990A FR7134990A FR2108101A1 FR 2108101 A1 FR2108101 A1 FR 2108101A1 FR 7134990 A FR7134990 A FR 7134990A FR 7134990 A FR7134990 A FR 7134990A FR 2108101 A1 FR2108101 A1 FR 2108101A1
- Authority
- FR
- France
- Prior art keywords
- photo
- diode
- emissive
- electronic component
- high resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/287—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN heterojunction gates
- H10F30/2877—Field-effect phototransistors having PN heterojunction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702048181 DE2048181A1 (de) | 1970-09-30 | 1970-09-30 | Fototransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2108101A1 true FR2108101A1 (en) | 1972-05-12 |
Family
ID=5783867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7134990A Withdrawn FR2108101A1 (en) | 1970-09-30 | 1971-09-29 | Semiconductor opto-electronic component - with photo-emissive diode coupled by high resistivity body to a photo-conductive diode |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT307525B (fr) |
| CH (1) | CH524897A (fr) |
| DE (1) | DE2048181A1 (fr) |
| FR (1) | FR2108101A1 (fr) |
| NL (1) | NL7113370A (fr) |
| SE (1) | SE362539B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2535112A1 (fr) * | 1982-10-22 | 1984-04-27 | Thomson Csf | Dispositif semi-conducteur optoelectronique de type phototransistor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2145279B (en) * | 1983-08-18 | 1987-10-21 | Standard Telephones Cables Ltd | Photodetector integrated circuit |
-
1970
- 1970-09-30 DE DE19702048181 patent/DE2048181A1/de active Pending
-
1971
- 1971-08-26 CH CH1248471A patent/CH524897A/de not_active IP Right Cessation
- 1971-09-21 AT AT817871A patent/AT307525B/de not_active IP Right Cessation
- 1971-09-28 SE SE12268/71A patent/SE362539B/xx unknown
- 1971-09-29 FR FR7134990A patent/FR2108101A1/fr not_active Withdrawn
- 1971-09-29 NL NL7113370A patent/NL7113370A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2535112A1 (fr) * | 1982-10-22 | 1984-04-27 | Thomson Csf | Dispositif semi-conducteur optoelectronique de type phototransistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2048181A1 (de) | 1972-04-06 |
| CH524897A (de) | 1972-06-30 |
| AT307525B (de) | 1973-05-25 |
| NL7113370A (fr) | 1972-04-05 |
| SE362539B (fr) | 1973-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |