JPS5457883A - Luminous semiconductor device - Google Patents

Luminous semiconductor device

Info

Publication number
JPS5457883A
JPS5457883A JP12347077A JP12347077A JPS5457883A JP S5457883 A JPS5457883 A JP S5457883A JP 12347077 A JP12347077 A JP 12347077A JP 12347077 A JP12347077 A JP 12347077A JP S5457883 A JPS5457883 A JP S5457883A
Authority
JP
Japan
Prior art keywords
type
luminous
optical fiber
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12347077A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Mori
Yuichi Ono
Kazuhiro Ito
Masaaki Aoki
Makoto Morioka
Kazuhiro Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12347077A priority Critical patent/JPS5457883A/en
Publication of JPS5457883A publication Critical patent/JPS5457883A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To improve coupling efficiency with an optical fiber by limiting a luminous pattern under limitations of a Pn junction part obtained by mesa etching.
CONSTITUTION: Layer 21 is a crystal layer (P-type conductive layer) with wide forbidden-energy-band width for light transmission, 22 and 23 are n-type and n+-type crystal layers grown continuously on crystal layer 21, and 24 is an insulating film; and then, 25 is an etched groove provided for limiting a luminous region, 26 and 27 are n-type and P-type ohmic electrodes, and 28 is an inside luminescent extraction window, where an optical fiber is fitted. Next, 29 is a Pn junction formed through liquid-pase growth, and the size determined during mesa etching is of the luminous region. The Pn junction region to be the luminous region is limited by etching, and the luminous pattern is also limited in consequence, so that the coupling efficiency with the optical fiber will improve
COPYRIGHT: (C)1979,JPO&Japio
JP12347077A 1977-10-17 1977-10-17 Luminous semiconductor device Pending JPS5457883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12347077A JPS5457883A (en) 1977-10-17 1977-10-17 Luminous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12347077A JPS5457883A (en) 1977-10-17 1977-10-17 Luminous semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457883A true JPS5457883A (en) 1979-05-10

Family

ID=14861416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12347077A Pending JPS5457883A (en) 1977-10-17 1977-10-17 Luminous semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457883A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871669A (en) * 1981-10-23 1983-04-28 Nec Corp Both surfaces light emission type light emitting diode
JPS5886782A (en) * 1981-11-19 1983-05-24 Nec Corp semiconductor light emitting diode element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871669A (en) * 1981-10-23 1983-04-28 Nec Corp Both surfaces light emission type light emitting diode
JPS5886782A (en) * 1981-11-19 1983-05-24 Nec Corp semiconductor light emitting diode element

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