FR2287524A1 - Procede d'attaque chimique d'objets a plusieurs couches - Google Patents

Procede d'attaque chimique d'objets a plusieurs couches

Info

Publication number
FR2287524A1
FR2287524A1 FR7530968A FR7530968A FR2287524A1 FR 2287524 A1 FR2287524 A1 FR 2287524A1 FR 7530968 A FR7530968 A FR 7530968A FR 7530968 A FR7530968 A FR 7530968A FR 2287524 A1 FR2287524 A1 FR 2287524A1
Authority
FR
France
Prior art keywords
chemical attack
layer objects
objects
layer
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7530968A
Other languages
English (en)
French (fr)
Other versions
FR2287524B1 (2
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Teletype Corp
Original Assignee
Teletype Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teletype Corp filed Critical Teletype Corp
Publication of FR2287524A1 publication Critical patent/FR2287524A1/fr
Application granted granted Critical
Publication of FR2287524B1 publication Critical patent/FR2287524B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
FR7530968A 1974-10-10 1975-10-09 Procede d'attaque chimique d'objets a plusieurs couches Granted FR2287524A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US513908A US3920471A (en) 1974-10-10 1974-10-10 Prevention of aluminum etching during silox photoshaping

Publications (2)

Publication Number Publication Date
FR2287524A1 true FR2287524A1 (fr) 1976-05-07
FR2287524B1 FR2287524B1 (2) 1980-03-28

Family

ID=24045078

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7530968A Granted FR2287524A1 (fr) 1974-10-10 1975-10-09 Procede d'attaque chimique d'objets a plusieurs couches

Country Status (5)

Country Link
US (1) US3920471A (2)
JP (1) JPS5164873A (2)
DE (1) DE2545153C2 (2)
FR (1) FR2287524A1 (2)
GB (1) GB1527106A (2)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
DE4424145A1 (de) * 1993-10-14 1995-04-20 Hewlett Packard Co Fluor-passivierte chromatographische Systeme
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
JPH07283166A (ja) * 1994-02-20 1995-10-27 Semiconductor Energy Lab Co Ltd コンタクトホールの作製方法
TW371775B (en) * 1995-04-28 1999-10-11 Siemens Ag Method for the selective removal of silicon dioxide
ATE256770T1 (de) * 2001-06-20 2004-01-15 Wolf-Dieter Franz Verfahren zum reinigen und passivieren von leichtmetalllegierungsoberflächen
US8772133B2 (en) * 2012-06-11 2014-07-08 Infineon Technologies Ag Utilization of a metallization scheme as an etching mask

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600285A (2) * 1968-03-28 1970-07-20
US3650960A (en) * 1969-05-06 1972-03-21 Allied Chem Etching solutions
DE1951968A1 (de) * 1969-10-15 1971-04-22 Philips Patentverwaltung AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
US3841905A (en) * 1970-11-19 1974-10-15 Rbp Chem Corp Method of preparing printed circuit boards with terminal tabs
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer

Also Published As

Publication number Publication date
JPS5164873A (en) 1976-06-04
FR2287524B1 (2) 1980-03-28
JPS579492B2 (2) 1982-02-22
DE2545153A1 (de) 1976-04-22
US3920471A (en) 1975-11-18
DE2545153C2 (de) 1985-12-12
GB1527106A (en) 1978-10-04

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Legal Events

Date Code Title Description
ST Notification of lapse