FR2301093A1 - Methode de diffusion de regions isolantes dans un substrat semi-conducteur - Google Patents

Methode de diffusion de regions isolantes dans un substrat semi-conducteur

Info

Publication number
FR2301093A1
FR2301093A1 FR7603823A FR7603823A FR2301093A1 FR 2301093 A1 FR2301093 A1 FR 2301093A1 FR 7603823 A FR7603823 A FR 7603823A FR 7603823 A FR7603823 A FR 7603823A FR 2301093 A1 FR2301093 A1 FR 2301093A1
Authority
FR
France
Prior art keywords
insulation
diffusion
layer
pref
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603823A
Other languages
English (en)
French (fr)
Other versions
FR2301093B1 (2
Inventor
Ulrich Geisler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2301093A1 publication Critical patent/FR2301093A1/fr
Application granted granted Critical
Publication of FR2301093B1 publication Critical patent/FR2301093B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
FR7603823A 1975-02-15 1976-02-12 Methode de diffusion de regions isolantes dans un substrat semi-conducteur Granted FR2301093A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2506436A DE2506436C3 (de) 1975-02-15 1975-02-15 Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente

Publications (2)

Publication Number Publication Date
FR2301093A1 true FR2301093A1 (fr) 1976-09-10
FR2301093B1 FR2301093B1 (2) 1982-08-20

Family

ID=5938970

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603823A Granted FR2301093A1 (fr) 1975-02-15 1976-02-12 Methode de diffusion de regions isolantes dans un substrat semi-conducteur

Country Status (2)

Country Link
DE (1) DE2506436C3 (2)
FR (1) FR2301093A1 (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305852A1 (fr) * 1975-03-26 1976-10-22 Philips Nv Procede pour la fabrication d'un corps semi-conducteur a partie annulaire de conducteur p
FR2356272A1 (fr) * 1976-06-21 1978-01-20 Rca Corp Procede de fabrication d'un dispositif semi-conducteur
FR2436496A1 (fr) * 1978-09-18 1980-04-11 Gen Electric Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde
EP0054317A1 (en) * 1980-12-09 1982-06-23 Koninklijke Philips Electronics N.V. Method of diffusing aluminium from a layer that contains aluminium into a silicon body
EP0263270A3 (en) * 1986-09-30 1989-09-13 Siemens Aktiengesellschaft Process for providing a p-doped semiconducting region in an n-conductivity semiconducting body

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
DE3137813A1 (de) * 1981-09-23 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305852A1 (fr) * 1975-03-26 1976-10-22 Philips Nv Procede pour la fabrication d'un corps semi-conducteur a partie annulaire de conducteur p
FR2356272A1 (fr) * 1976-06-21 1978-01-20 Rca Corp Procede de fabrication d'un dispositif semi-conducteur
FR2436496A1 (fr) * 1978-09-18 1980-04-11 Gen Electric Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde
EP0054317A1 (en) * 1980-12-09 1982-06-23 Koninklijke Philips Electronics N.V. Method of diffusing aluminium from a layer that contains aluminium into a silicon body
EP0263270A3 (en) * 1986-09-30 1989-09-13 Siemens Aktiengesellschaft Process for providing a p-doped semiconducting region in an n-conductivity semiconducting body

Also Published As

Publication number Publication date
DE2506436A1 (de) 1976-08-26
FR2301093B1 (2) 1982-08-20
DE2506436B2 (de) 1979-08-30
DE2506436C3 (de) 1980-05-14

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